Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY6264-55SNXI

Part No.:
CY6264-55SNXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
28-SOIC (0.295", 7.50mm Width)
Datasheet:
AetrixCY6264-55SNXI.pdf
Description:
IC SRAM 64KBIT PARALLEL 28SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,320

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY6264-55SNXI from Cypress Semiconductor is an 8K × 8 (64 Kbit) CMOS static RAM with 55 ns access time, TTL-compatible I/O, and dual chip enable (CE1 active LOW, CE2 active HIGH) for flexible memory expansion in embedded systems. It operates at 5V ±10% over –40°C to +85°C industrial range, features automatic CE1-controlled power-down (≤40 mA standby), and uses a 28-pin 300-mil SOIC package.

For engineers reviewing the CY6264-55SNXI datasheet, CY6264-55SNXI pinout, CY6264-55SNXI application, or CY6264-55SNXI equivalent, key selection criteria include industrial temperature support, CE1/CE2/OE logic decoding for multi-chip select, 55 ns read timing (tAA), and automatic low-power mode activation via CE1 high.

Technical Context

The CY6264-55SNXI implements a synchronous, non-volatile-independent SRAM array organized as 8192 words × 8 bits, with address decoding across A0–A12 (13-bit addressing). Its three-state bidirectional I/O lines (I/O0–I/O7) are controlled by combined CE1/CE2/OE/WE logic states, enabling precise read/write gating without external bus transceivers.

Power management is handled exclusively through CE1: when CE1 is HIGH (≥VCC – 0.3 V), the device enters automatic power-down, reducing ICC to ≤40 mA (industrial) while maintaining data retention. CE2 must be HIGH for any operation; OE enables output drivers only during reads when WE is HIGH and CE1 is LOW.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size8K × 8 = 64 Kbit; supports byte-wide data buses without width expansion logic
Access Time (tAA)55 ns max; ensures compatibility with 12–15 MHz microcontroller bus cycles
Supply Voltage5V ±10%; compatible with legacy 5V TTL/CMOS system rails
Operating Temp–40°C to +85°C; qualified for industrial control, motor drives, and instrumentation
Standby Current (ISB1)≤40 mA (industrial); enables low-quiescent power in sleep-mode systems
I/O InterfaceTTL-compatible inputs/outputs; eliminates level-shifting in mixed-logic designs
Chip EnablesCE1 (active LOW) + CE2 (active HIGH); allows hierarchical memory mapping with up to 4 devices per decode group

Pinout & Package

Package: 28-pin SOIC, 300-mil body width (SN28), surface-mount, Pb-free (RoHS-compliant).

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address Inputs13-bit address bus; selects one of 8192 memory locations
I/O0–I/O7Bidirectional Data BusTri-state I/O lines shared for read and write; high-impedance when deselected or during write
CE1Active LOW Chip EnablePrimary enable; forces automatic power-down when HIGH, critical for system-level energy budgeting
CE2Active HIGH Chip EnableSecondary enable; must be HIGH for any access; enables AND-gated chip selection
OEActive LOW Output EnableControls output driver state independently of CE; allows read data gating without deselecting chip
WEActive LOW Write EnableControls direction of I/O bus; LOW initiates write, HIGH enables read output
VCC, GNDPower SupplySingle 5V supply; no separate VDD/VSS or backup battery required

Key Features

FeatureDesign Value
Dual CE architecture (CE1/CE2)Enables scalable memory maps using standard 3-to-8 decoders without additional glue logic
Automatic CE1 power-downReduces standby current to ≤40 mA (industrial), eliminating need for external power gating
55 ns access with 5V supplyMeets timing requirements of 80C51, Z80, and 68000-based controllers at full speed
TTL-compatible I/ODirect interface to legacy microprocessor buses without level translators or pull-up resistors
Alpha particle immunityDie coat protection ensures reliable operation in high-radiation environments (e.g., industrial PLCs)

Applications

Industrial PLC Memory BufferLegacy Microcontroller Data RAM

Use Scenario: Storing real-time I/O status and ladder logic variables in programmable logic controllers operating continuously at 70°C ambient.

IC Role / Device Role / Timing Role: Byte-accessible, non-refreshing SRAM serving as primary working memory for scan-cycle execution.

Use Value: 55 ns tAA and –40°C to +85°C rating ensure deterministic response under thermal stress; CE1 power-down cuts idle power by >70% during watchdog sleep intervals.

Use Scenario: Providing general-purpose RAM for Z80 or 8085-based embedded systems where board space and BOM count are constrained.

IC Role / Device Role / Timing Role: Standalone 64 Kbit data memory interfaced directly to 8-bit multiplexed address/data buses.

Use Value: TTL-compatible I/O and single 5V supply eliminate level shifters and auxiliary regulators; 28-pin SOIC fits dense PCB layouts.

Motor Drive Control Register BankMedical Instrument Data Cache

Use Scenario: Holding PWM duty cycle registers, fault flags, and calibration coefficients in brushless DC motor controllers exposed to EMI and vibration.

IC Role / Device Role / Timing Role: Nonvolatile-independent storage for configuration-critical parameters updated infrequently but read frequently.

Use Value: CE2-controlled selection isolates RAM during firmware updates; alpha-immune die coat prevents bit flips from switching noise.

Use Scenario: Caching sensor acquisition buffers in portable ECG or pulse oximeter units requiring long battery life and clinical-grade reliability.

IC Role / Device Role / Timing Role: Low-power, fast-access scratchpad memory supporting burst ADC reads and FIFO management.

Use Value: ISB1 ≤40 mA at +85°C extends battery runtime; 55 ns access enables real-time waveform reconstruction without CPU stalling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS6C6264-55SIN55 ns access, same 8K×8 organization, but uses different CE polarity (CE active LOW only, no CE2)Lacks hierarchical chip select; requires redesign of address decoder logicSelect only if simplifying CE logic is prioritized over multi-device expandability
IS62WV6416BLL-55NLI16-bit bus width (64K×16), 55 ns, 3.3V core; includes BYTE# control for 8-bit accessRequires voltage translation and bus-width adaptation; higher density but not drop-inChoose when future-proofing for wider data paths or migrating to 3.3V systems

Compared with AS6C6264-55SIN and IS62WV6416BLL-55NLI, the CY6264-55SNXI uniquely supports dual CE logic for seamless bank switching in legacy 5V systems, retains full pin compatibility with original Cypress designs, and delivers guaranteed industrial-temp performance without voltage translation overhead.

Availability

CY6264-55SNXI is available at Aetrix Electronics and suitable for industrial PLCs, legacy microcontroller upgrades, motor drive control modules, and medical instrument data buffering requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY6264-55SNXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions, founded in 1982 and headquartered in San Jose, CA.

The CY6264 belongs to Cypress's legacy parallel SRAM product line, designed specifically for drop-in replacement of obsolete 28-pin 5V SRAMs in industrial and automotive-qualified systems requiring long-term availability and proven reliability.

FAQ

What is the maximum clock frequency supported by CY6264-55SNXI?

The CY6264-55SNXI is an asynchronous SRAM and does not use a clock signal. Its maximum effective bus frequency is determined by access time: with 55 ns tAA and tRC, it supports sustained read/write cycles up to ~12 MHz in systems with zero wait states. Timing margins depend on board layout, load capacitance, and controller setup/hold compliance.

Can CY6264-55SNXI operate at 3.3V?

No. The CY6264-55SNXI is specified only for 5V ±10% operation (4.5V–5.5V). Applying 3.3V violates the absolute maximum input voltage rating and will result in undefined behavior, failed reads/writes, or permanent damage. For 3.3V systems, consider Infineon's newer low-voltage SRAM families like the CY62167 series.

Is the CY6264-55SNXI RoHS-compliant?

Yes. The "X" suffix in CY6264-55SNXI denotes Pb-free (RoHS-compliant) construction, confirmed in Cypress's ordering information table. The package uses matte tin lead finish and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements.

How does CE1 power-down differ from CE2 deactivation?

CE1 HIGH triggers automatic internal power-down, reducing ICC to ≤40 mA (industrial) while retaining memory contents. CE2 LOW simply disables the chip without power reduction - the device remains fully powered but unresponsive. Both conditions place I/O in high-Z, but only CE1 HIGH delivers measurable quiescent current savings.

CY6264-55SNXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
28-SOIC (0.295", 7.50mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOIC

CY6264-55SNXI FAQ

1.How can I place an order for CY6264-55SNXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY6264-55SNXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY6264-55SNXI reliable?

The price and inventory of CY6264-55SNXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY6264-55SNXI is usually 5 days.

3.What payment methods are accepted for CY6264-55SNXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY6264-55SNXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY6264-55SNXI?

CY6264-55SNXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY6264-55SNXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY6264-55SNXI?

For technical support, including CY6264-55SNXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY6264-55SNXI requirements.

6.How does Aetrix verify that CY6264-55SNXI is sourced from the original manufacturer or authorized distributors?

All CY6264-55SNXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY6264-55SNXI meets industry standards.

7.What is the process for return or replacement of CY6264-55SNXI?

All CY6264-55SNXI units undergo pre-shipment inspection (PSI). If there is an issue with CY6264-55SNXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY6264-55SNXI part is unused and in its original packaging.

Return procedure for CY6264-55SNXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY6264-55SNXI Tags

  • CY6264-55SNXI
  • CY6264-55SNXI PDF
  • CY6264-55SNXI Datasheet
  • CY6264-55SNXI Specifications
  • CY6264-55SNXI Images
  • Infineon Technologies
  • Infineon Technologies CY6264-55SNXI
  • Buy CY6264-55SNXI
  • CY6264-55SNXI Price
  • CY6264-55SNXI Distributor
  • CY6264-55SNXI Supplier
  • CY6264-55SNXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER