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Infineon Technologies CY6264-70SNC

Part No.:
CY6264-70SNC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
28-SOIC (0.295", 7.50mm Width)
Datasheet:
AetrixCY6264-70SNC.pdf
Description:
IC SRAM 64KBIT PARALLEL 28SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,423

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Product details

Overview

CY6264-70SNC from Cypress Semiconductor is an 8K × 8 (64 Kbit) CMOS static RAM with 70 ns access time, TTL-compatible I/O, and dual chip enable (CE1 active LOW, CE2 active HIGH) for flexible memory expansion in embedded control and data buffering systems. It operates at 5V ±10%, supports commercial temperature range (0°C to +70°C), and features automatic power-down via CE1 reducing standby current to 15 mA.

For engineers reviewing the CY6264-70SNC datasheet, CY6264-70SNC pinout, CY6264-70SNC application, or CY6264-70SNC equivalent, key selection criteria include access timing consistency across VCC and temperature, three-state I/O drive capability, CE/OE/WE control logic compatibility with 8-bit microcontrollers, and SOIC-28 narrow-body packaging for space-constrained PCB layouts.

Technical Context

The CY6264-70SNC implements a fully static 8192 × 8-bit memory array with asynchronous read/write operation controlled by independent CE1, CE2, OE, and WE signals. Its architecture includes row/column decoders, sense amplifiers, and input/output buffers with high-impedance control tied directly to chip select and output enable states.

It delivers deterministic timing: tAA = 70 ns (address-to-data valid), tDOE = 35 ns (OE low to data valid), and tHZOE = 30 ns (OE high to high-Z), all specified under 30-pF load and 5 ns signal transition. Power-down is triggered solely by CE1 HIGH, reducing ICC to ISB2 = 15 mA (commercial) without requiring external sequencing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization8192 words × 8 bits (64 Kbit); supports byte-wide data bus interfacing without external demultiplexing.
Access Time70 ns max; ensures compatibility with 10–14 MHz microcontroller bus cycles using standard wait-state logic.
VCC Supply5.0 V ±10%; operates reliably across 4.5–5.5 V, enabling use with standard linear regulators and LDOs.
Standby Current15 mA max (ISB2, commercial); enables low-power hold mode during CPU sleep without external power gating.
I/O Voltage LevelsVIH = 2.2 V min, VIL = 0.8 V max; guarantees robust noise margin against TTL and early CMOS logic families.
Output DriveIOL = 8 mA, IOH = –4 mA; sufficient to drive 10 TTL loads or terminate stubs on short PCB traces.
Package28-pin SOIC (SN28, 300-mil body); industry-standard footprint compatible with automated SMT placement and reflow.

Pinout & Package

Package: 28-pin narrow-body SOIC (SN28), 300-mil width, 0.050-inch pitch, JEDEC MS-012AC compliant.

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address Inputs13-bit address bus (8192 locations); A0 LSB, A12 MSB; no internal latching - requires stable address during CE1/OE/WE windows.
I/O0–I/O7Bidirectional Data BusThree-state CMOS I/O; high-impedance when CE1 HIGH, OE HIGH, or WE LOW during write - prevents bus contention.
CE1Active-LOW Chip EnablePrimary selection and power-down control; device enters low-current mode (ISB2) when HIGH, regardless of other inputs.
CE2Active-HIGH Chip EnableSecondary enable for bank selection; must be HIGH for any read/write; enables multi-chip decoding with CE1.
OEActive-LOW Output EnableControls output buffer only; does not affect power state - outputs float if CE1 HIGH even when OE LOW.
WEActive-LOW Write EnableDirectly gates write operation; LOW with CE1 LOW and CE2 HIGH initiates write; rising edge terminates write cycle.
VCC, GNDPower SupplySingle 5V supply; decoupling required within 10 mm of pins 14 (VCC) and 15 (GND) per layout guidelines.

Key Features

FeatureDesign Value
Dual Chip Enable LogicCE1 (active LOW) + CE2 (active HIGH) allows hierarchical memory mapping - e.g., CE2 selects SRAM bank, CE1 selects device within bank.
Automatic CE1 Power-DownReduces ICC from 100 mA (active) to 15 mA (standby) without clock gating or software intervention - critical for battery-backed systems.
TTL-Compatible I/OInput thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and output drive (±4–8 mA) eliminate level-shifting needs when interfacing with 8051, Z80, or 68000 derivatives.
High-Noise ImmunityDie coat process provides >2001 V ESD rating (MIL-STD-883) and latch-up immunity >200 mA - suitable for industrial control environments.

Applications

Industrial PLC Data BufferLegacy Microcontroller System Memory

Use Scenario: Storing real-time sensor logs and I/O state snapshots in programmable logic controllers with 8-bit bus interfaces.

IC Role / Device Role / Timing Role: Byte-accessible non-volatile shadow RAM holding volatile process variables between scan cycles.

Use Value: 70 ns access ensures full-speed data capture at 10 kHz I/O scan rates without wait states; CE1 power-down cuts idle power by 85% during polling gaps.

Use Scenario: Expanding RAM for Z80- or 8085-based instrumentation firmware where ROM holds code and SRAM holds runtime variables.

IC Role / Device Role / Timing Role: Asynchronous parallel memory mapped at fixed address range (e.g., 0x8000–0x9FFF), selected via discrete gate logic.

Use Value: Dual CE inputs simplify address decoder design using 74LS138; TTL-compatible I/O eliminates interface glue logic.

Medical Device Parameter StorageAutomotive Body Control Module Cache

Use Scenario: Holding calibration coefficients and user-configurable thresholds in portable diagnostic equipment with intermittent power.

IC Role / Device Role / Timing Role: Battery-backed SRAM node preserving critical settings during main power loss; CE1 tied to backup rail supervisor.

Use Value: ISB2 = 15 mA at 5 V enables >100-hour retention on coin-cell backup; 0.8 V VIL ensures reliable wake-up from brown-out conditions.

Use Scenario: Caching door lock status, window position, and lighting configuration in BCMs with CAN-linked master MCU.

IC Role / Device Role / Timing Role: Local fast-access memory for MCU peripherals, isolated from CAN traffic latency by dedicated address decode.

Use Value: SOIC-28 narrow-body package fits tight fuse-box PCBs; 300-mil width avoids interference with adjacent high-current traces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ISSI IS62C256AL-70QLI32K × 8 organization, 70 ns, same SOIC-28, but CE active LOW only (no CE2); ISB = 25 mA (industrial).Lacks CE2 for multi-bank decoding; higher standby current limits battery life in always-on modules.Select when memory size >64 Kbit is needed and CE2 is unused; verify address decoder simplification doesn't impact system flexibility.
Renesas R1LV064A-70JL-E64 Kbit, 70 ns, SOIC-28, but single CE (active LOW), no CE2; VCC = 2.7–3.6 V only - incompatible with 5 V systems.Requires level shifters for 5 V microcontrollers; unsuitable for legacy 5 V designs without redesign.Choose only for new 3.3 V embedded systems prioritizing lower voltage operation; not drop-in for CY6264-70SNC.

Compared with IS62C256AL-70QLI and R1LV064A-70JL-E, the CY6264-70SNC uniquely supports hierarchical memory decoding via dual CE inputs and maintains full 5 V compatibility - making it irreplaceable in legacy industrial and automotive control boards where bus timing and voltage alignment are fixed constraints.

Availability

CY6264-70SNC is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller system memory expansion, and medical device parameter storage requiring stable component supply across long-lifecycle production programs.

Supply support for CY6264-70SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions, founded in 1982 and headquartered in San Jose, California.

The CY6264 belongs to Cypress's legacy parallel SRAM product line, designed specifically for pin-compatible replacement of aging 2764/6116-style memories in industrial control, test equipment, and avionics systems requiring proven reliability and long-term availability.

FAQ

What is the minimum VCC required for reliable operation of CY6264-70SNC?

The CY6264-70SNC specifies VCC = 5.0 V ±10%, meaning the absolute minimum operating voltage is 4.5 V. Below this, parameters such as VOH (≥2.4 V), VOL (≤0.4 V), and tAA (≤70 ns) are not guaranteed. Testing at 4.4 V may yield functional behavior in some units but violates datasheet limits and risks timing violations or data corruption.

Can CE2 be left unconnected or tied to VCC permanently?

Yes - CE2 is an active-HIGH input with TTL-compatible thresholds, and the datasheet permits tying it permanently to VCC (5 V) when only CE1 is used for selection. Doing so reduces address decoder complexity and is common in single-SRAM implementations; however, CE2 must never float, as indeterminate logic levels could cause partial selection or increased leakage.

Does CY6264-70SNC support battery backup operation?

The CY6264-70SNC does not integrate battery switchover circuitry, but its low ISB2 current (15 mA) and wide VCC tolerance (down to 4.5 V) make it suitable for external battery-backup designs. When VCC drops below ~4.2 V, CE1 should be asserted HIGH to enter power-down mode, preserving data integrity until backup power engages - verified in Cypress Application Note AN2224.

Is there a lead-free (RoHS-compliant) version of CY6264-70SNC?

Yes - the CY6264-70SNXC is the RoHS-compliant, lead-free variant in the same SN28 (300-mil SOIC) package. It shares identical timing, electrical, and thermal specifications with CY6264-70SNC, differing only in finish (matte tin vs. leaded solderable plating) and compliance documentation; both are pin- and functionally identical for drop-in replacement.

CY6264-70SNC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
28-SOIC (0.295", 7.50mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOIC

CY6264-70SNC FAQ

1.How can I place an order for CY6264-70SNC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY6264-70SNC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY6264-70SNC reliable?

The price and inventory of CY6264-70SNC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY6264-70SNC is usually 5 days.

3.What payment methods are accepted for CY6264-70SNC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY6264-70SNC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY6264-70SNC?

CY6264-70SNC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY6264-70SNC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY6264-70SNC?

For technical support, including CY6264-70SNC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY6264-70SNC requirements.

6.How does Aetrix verify that CY6264-70SNC is sourced from the original manufacturer or authorized distributors?

All CY6264-70SNC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY6264-70SNC meets industry standards.

7.What is the process for return or replacement of CY6264-70SNC?

All CY6264-70SNC units undergo pre-shipment inspection (PSI). If there is an issue with CY6264-70SNC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY6264-70SNC part is unused and in its original packaging.

Return procedure for CY6264-70SNC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY6264-70SNC Tags

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