Infineon Technologies CY6264-70SNXC

Overview

CY6264-70SNXC from Cypress Semiconductor is an 8K × 8 (64 Kbit) CMOS static RAM with 70 ns access time, TTL-compatible I/O, and dual chip enable (CE1 active-low, CE2 active-high) for flexible memory expansion in embedded systems. It operates at 5V ±10%, supports commercial temperature range (0°C to +70°C), and features automatic power-down via CE1, reducing standby current to 15 mA.

For engineers reviewing the CY6264-70SNXC datasheet, CY6264-70SNXC pinout, CY6264-70SNXC application, or CY6264-70SNXC equivalent, key selection criteria include access timing consistency across address transitions, three-state I/O control under OE/WE/CE coordination, low-power deselected operation, and Pb-free SOIC-28 packaging for legacy industrial PCB compatibility.

Technical Context

The CY6264-70SNXC implements a 256 × 32 × 8 memory array with separate row/column decoding, sense amplifiers, and input/output buffers. Its read cycle is controlled by coordinated CE1 (active-low), CE2 (active-high), and OE (active-low) signals, while write operations require CE1 low, CE2 high, and WE low - enabling precise bus arbitration in multi-chip memory systems.

Power management relies on CE1-driven automatic power-down: when CE1 is high, ICC drops to ≤15 mA (commercial), independent of OE or WE state. The device uses a die coat for alpha particle immunity and meets MIL-STD-883 Class 1A ESD rating (>2001 V).

Key Specifications

Pinout & Package

Package: 28-pin Small Outline Integrated Circuit (SOIC), 300-mil body width, surface-mount, Pb-free finish (SN28 footprint).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS62C256AL-70QLI and MCM6264B-70, the CY6264-70SNXC uniquely delivers verified alpha immunity and lowest standby current (15 mA) in its class - making it optimal for sealed, long-life, or safety-critical commercial systems where reliability outweighs density.

Availability

CY6264-70SNXC is available at Aetrix Electronics and suitable for industrial PLC data buffers, legacy microcontroller systems, and point-of-sale terminal memory requiring stable component supply and RoHS-compliant Pb-free packaging.

Supply support for CY6264-70SNXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions for embedded systems.

The CY6264 belongs to Cypress's legacy parallel SRAM product line, designed specifically for 5V bus-compatible, low-latency, high-reliability memory in industrial control, medical, and communications equipment.

FAQ

What is the maximum clock frequency supported for read/write cycles?

The CY6264-70SNXC does not use a clock; it is asynchronous. Maximum effective bus frequency depends on cycle timing: read cycle time (tRC) is 70 ns, enabling up to ~14.3 MHz sustained random access. Write cycle time (tWC) is 70 ns, with minimum WE pulse width (tPWE) of 40 ns. Timing must comply with all AC parameters in the datasheet, especially tSCE1 and tSD.

Can CE1 and CE2 be tied together for simplified decoding?

No - CE1 is active-low and CE2 is active-high; tying them directly creates a logical conflict. To simplify decoding, use an inverter on one signal or drive CE2 via a NAND gate output referenced to CE1. The dual-enable architecture is intended for hierarchical addressing, not redundancy.

Is the CY6264-70SNXC functionally compatible with the CY6264-70SC?

Yes - both share identical electrical specifications, pinout, and timing. The only differences are package dimensions (300-mil SOIC vs. 330-mil SOIC) and Pb-free finish (SNXC vs. SC). Footprint compatibility requires verification of pad layout: SN28 (300-mil) has narrower body and tighter pin pitch than S28.33.

Does this SRAM retain data during VCC brown-out conditions?

Data retention is guaranteed only down to VCC = 2.0 V per datasheet limits. Below that, data may be lost. For brown-out resilience, external circuitry (e.g., reset supervisor with VCC monitoring and hold-off) is required to assert CE1 high before VCC drops below 2.0 V, placing the device in low-power hold mode with retained contents.