My Inquiry
My Account
Infineon Technologies CY6264-70SNXCT
- Part No.:
- CY6264-70SNXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
CY6264-70SNXCT.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,048
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY6264-70SNXCT from Cypress Semiconductor is an 8K × 8 (64 Kbit) CMOS static RAM with 70 ns access time, TTL-compatible I/O, and dual chip enable (CE1 active LOW, CE2 active HIGH) for flexible memory expansion in embedded control and data buffering systems. It operates at 5 V ±10%, supports commercial temperature range (0°C to +70°C), and features automatic power-down reducing standby current to 15 mA.
For engineers reviewing the CY6264-70SNXCT datasheet, CY6264-70SNXCT pinout, CY6264-70SNXCT application, or CY6264-70SNXCT equivalent, key selection criteria include access timing consistency under 30-pF load, CE1-controlled power-down behavior, high-impedance I/O state management during deselect, and SOIC-28 lead count compatibility with legacy PCB layouts.
Technical Context
The CY6264-70SNXCT implements a full CMOS 8192 × 8 asynchronous SRAM array with three-state bidirectional I/O drivers, row/column decoding, and sense amplifiers. Its dual CE architecture enables hierarchical memory mapping-CE1 controls power state and selection priority, while CE2 provides secondary enable logic for banked addressing schemes.
Read and write operations are fully asynchronous and controlled by the overlap of CE1 (LOW), CE2 (HIGH), OE (LOW for read), and WE (LOW for write). Output enable timing (tDOE = 35 ns max) and write pulse width (tPWE = 40 ns min) are specified under 5-V supply and 30-pF capacitive load per AC test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8192 words × 8 bits (64 Kbit); supports byte-wide data bus interfacing without external demultiplexing |
| Access Time | 70 ns max; guarantees valid data on I/O pins within 70 ns after address/CE1/OE stabilization under 30-pF load |
| VCC Supply | 5 V ±10%; compatible with standard TTL/CMOS logic rails and eliminates need for dedicated voltage regulators |
| Standby Current (ISB2) | 15 mA max (commercial); achieved when CE1 > VCC – 0.3 V, enabling low-power sleep in idle microcontroller peripherals |
| Input Capacitance | 7 pF max; ensures minimal signal loading on address/control buses, preserving timing margins in dense PCB layouts |
| Output Drive | IOH = –4 mA, IOL = 8 mA; meets TTL voltage thresholds (VOH ≥ 2.4 V, VOL ≤ 0.4 V) for direct interface with 74LS/HC logic |
| Operating Temperature | 0°C to +70°C; validated for use in industrial HMI panels, printer controllers, and network edge device buffers |
Pinout & Package
Packaged in a 28-pin 300-mil narrow-body SOIC (SN28), the CY6264-70SNXCT uses a standard pinout optimized for board-level memory expansion with minimal trace skew.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus supporting full 8K-word decoding; A0 is LSB, A12 is MSB |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tristatable I/O lines; high-impedance when CE1 HIGH, OE HIGH, or WE LOW during write setup |
| CE1 | Active-LOW Primary Chip Enable | Primary selection and power-down control; drives automatic ISB reduction when deasserted |
| CE2 | Active-HIGH Secondary Chip Enable | Enables hierarchical decode; must be HIGH for any operation, allowing multi-chip address partitioning |
| OE | Active-LOW Output Enable | Controls output driver enable independently of CE; allows read data gating without deselection |
| WE | Active-LOW Write Enable | Directly controls write cycle initiation; overlaps with CE1/CE2 to define write window |
| VCC | Power Supply | +5 V supply pin; decoupling required within 10 mm of pin per layout guidelines |
| GND | Ground Reference | Signal and power ground return; shared with all I/O and control pins for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Dual Chip Enable Architecture | CE1 (active LOW) and CE2 (active HIGH) allow cascaded memory banks with independent power and select control |
| Automatic Power-Down | Reduces ISB to 15 mA when CE1 is inactive, cutting system standby power without external logic |
| TTL-Compatible I/O | Meets VOH ≥ 2.4 V and VOL ≤ 0.4 V at rated loads, enabling direct connection to legacy microcontrollers and FPGAs |
| Three-State Output Drivers | Guaranteed high-impedance state during deselect, OE HIGH, or WE LOW-prevents bus contention in shared-data systems |
| Alpha Particle Immunity | Die coat process mitigates soft errors in terrestrial industrial environments without requiring ECC overhead |
Applications
| Industrial PLC Data Buffer | Legacy Microcontroller Expansion Memory |
|---|---|
Use Scenario: Stores real-time I/O scan data between CPU cycles in programmable logic controllers with 8-bit parallel buses. IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing deterministic 70 ns read/write latency for deterministic scan-cycle timing. Use Value: Eliminates wait states for 8051- and Z80-based controllers, sustaining 14.3 kHz scan rates without DMA or cache. |
Use Scenario: Adds external RAM to vintage 8-bit microcontrollers (e.g., 80C51, PIC16C7x) where internal RAM is insufficient for firmware variables. IC Role / Device Role / Timing Role: Standalone memory mapped at fixed address space; CE2 used for bank selection across multiple CY6264 devices. Use Value: Enables full 64 KB addressable RAM space using only two control lines, avoiding complex glue logic. |
| Network Printer Page Buffer | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: Holds rasterized page data during print engine spooling in parallel-port laser printers with limited host buffer depth. IC Role / Device Role / Timing Role: Dual-port-like operation via CE1 toggling: one port writes new data while another reads to laser modulator. Use Value: Sustains 12 ppm print throughput by decoupling host transfer latency from page rendering timing. |
Use Scenario: Stores digital stimulus/response patterns for semiconductor wafer probing, accessed at precise clock edges by pattern generator ASICs. IC Role / Device Role / Timing Role: Static storage element synchronized to system clock via WE/OE timing; no refresh circuitry required. Use Value: Guarantees zero-bit-error pattern replay over 10⁶+ cycles due to CMOS cell stability and alpha immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62C256AL-70QLI | 32K × 8 organization, 70 ns access, 5 V only, SOIC-28; higher density but no CE2 pin-uses single CE | Lacks hierarchical enable; requires redesign of address decode logic for multi-bank systems | Select when expanding memory capacity beyond 64 Kbit and CE2 functionality is unused |
| ON Semiconductor MC68HC11E9CP | Microcontroller with integrated 512-byte RAM; not a standalone SRAM-no I/O pins or CE/OE/WE controls | Not functionally substitutable; serves as system-on-chip, not memory peripheral | Reject as alternative-incorrect device category (MCU vs. SRAM) |
Compared with IS62C256AL-70QLI and MC68HC11E9CP, the CY6264-70SNXCT uniquely supports dual-enable memory banking and maintains strict 70 ns timing across full commercial temperature range-critical for deterministic real-time buffering where address decode flexibility and timing predictability outweigh raw density.
Availability
CY6264-70SNXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller expansion, network printer page storage, and automated test equipment pattern memory requiring stable component supply and long-lifecycle support.
Supply support for CY6264-70SNXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions for industrial, automotive, and consumer applications.
The CY6264 belongs to Cypress's legacy parallel SRAM product line, designed specifically for drop-in replacement of aging 27C64/6116-style memories in cost-sensitive, reliability-critical embedded systems.
FAQ
Is CY6264-70SNXCT RoHS-compliant?
Yes. The "X" suffix in CY6264-70SNXCT denotes lead-free (Pb-free) construction per JEDEC J-STD-609, confirmed in Cypress's official ordering information table for SN28 package variants. It uses matte tin lead finish and complies with EU RoHS Directive 2011/65/EU.
Can CY6264-70SNXCT operate at 3.3 V?
No. The device is specified only for 5 V ±10% operation (4.5 V to 5.5 V). Electrical characteristics-including VOH, VOL, and access time-are not guaranteed below 4.5 V, and maximum ratings prohibit sustained operation outside this range.
What is the function of the NC pin on CY6264-70SNXCT?
Pin 14 is marked "NC" (No Connect) in the pin configuration diagram and truth table. It is internally unconnected and must remain floating-no external tie to VCC, GND, or signals. Routing traces to this pin may cause parasitic coupling or mechanical stress.
Does CY6264-70SNXCT require an external clock signal?
No. It is a fully asynchronous static RAM: all operations are controlled solely by level-sensitive inputs (CE1, CE2, OE, WE, address, and data). No clock input exists, and no timing reference other than signal propagation delays is needed.
CY6264-70SNXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 28-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOIC
CY6264-70SNXCT FAQ
1.How can I place an order for CY6264-70SNXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY6264-70SNXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY6264-70SNXCT reliable?
The price and inventory of CY6264-70SNXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY6264-70SNXCT is usually 5 days.
3.What payment methods are accepted for CY6264-70SNXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY6264-70SNXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY6264-70SNXCT?
CY6264-70SNXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY6264-70SNXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY6264-70SNXCT?
For technical support, including CY6264-70SNXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY6264-70SNXCT requirements.
6.How does Aetrix verify that CY6264-70SNXCT is sourced from the original manufacturer or authorized distributors?
All CY6264-70SNXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY6264-70SNXCT meets industry standards.
7.What is the process for return or replacement of CY6264-70SNXCT?
All CY6264-70SNXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY6264-70SNXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY6264-70SNXCT part is unused and in its original packaging.
Return procedure for CY6264-70SNXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY6264-70SNXCT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
