Infineon Technologies CY7C1009B-15VXC

Overview

CY7C1009B-15VXC from Cypress Semiconductor is a 128K × 8 (131,072-word × 8-bit) high-speed CMOS static RAM with 15 ns access time, 5 V ±10% supply, TTL-compatible I/O, and automatic CE power-down. It operates across commercial temperature range (0°C to +70°C) in a 300-mil-wide 32-pin SOJ package and is used for fast data buffering in microcontroller-based instrumentation systems.

For engineers reviewing the CY7C1009B-15VXC datasheet, CY7C1009B-15VXC pinout, CY7C1009B-15VXC application, or CY7C1009B-15VXC equivalent, key selection criteria include tAA = 15 ns read timing, ISB2 = 10 mA CMOS standby current, dual chip enable (CE1 active-low / CE2 active-high), and 300-mil SOJ footprint compatibility with space-constrained PCB layouts.

Technical Context

This SRAM implements asynchronous random-access memory architecture with independent address decoding (A0–A16), tri-state bidirectional I/O (I/O0–I/O7), and hierarchical enable control via CE1, CE2, OE, and WE. Its dual CE scheme enables seamless bank expansion without external logic.

The device supports three operational modes: active read (CE1=L, CE2=H, OE=L, WE=H), active write (CE1=L, CE2=H, WE=L), and automatic power-down (CE1=H or CE2=L), with data retention down to 2.0 V when deselected - critical for low-power hold states in battery-backed systems.

Key Specifications

Pinout & Package

Package: 32-pin SOJ (300-mil width), lead-free (Pb-Free) variant per ordering suffix "VXC".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV12816AL-15TQLI and CY7C1009D-15ZXC, the CY7C1009B-15VXC uniquely delivers 5 V TTL compatibility, 300-mil SOJ mechanical fit, and proven reliability in long-lifecycle industrial instruments - making it optimal for maintaining legacy hardware without redesign.

Availability

CY7C1009B-15VXC is available at Aetrix Electronics and suitable for industrial data loggers, legacy microcontroller buffers, and automated test equipment requiring stable component supply and long-term obsolescence support.

Supply support for CY7C1009B-15VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and programmable solutions for industrial and automotive markets.

The CY7C1009B belongs to Cypress's legacy high-speed CMOS SRAM product line, designed specifically for reliable, low-latency data buffering in 5 V embedded control systems where timing predictability and long-term supply stability are critical.

FAQ

Is CY7C1009B-15VXC pin-compatible with CY7C1009B-15VC?

Yes - both share identical 32-pin SOJ (300-mil) pinout and electrical behavior. The "VXC" suffix denotes lead-free (Pb-Free) construction per JEDEC J-STD-609, while "VC" is leaded. No layout or firmware changes are required for substitution, though reflow profile must be updated to accommodate Pb-Free solder temperatures.

Does CY7C1009B-15VXC support true 2.0 V data retention during power loss?

Yes - when CE1 is HIGH or CE2 is LOW, the device enters automatic power-down mode and retains valid data with VCC as low as 2.0 V, provided all inputs remain within VCC ±0.3 V. This is verified per datasheet Section "Data Retention Characteristics" and does not require external control signals.

Can CY7C1009B-15VXC be used with 3.3 V microcontrollers?

No - it requires 5 V ±10% supply and has TTL-level input thresholds (VIH ≥ 2.2 V). Direct interfacing with 3.3 V logic risks marginal VIH margin and violates VOH/VOL specs. Level translation (e.g., TXB0108) or migration to 3.3 V SRAM like IS61LV12816 is required for compatibility.

What is the maximum clock frequency supported for burst reads?

This is an asynchronous SRAM - it has no clock input. Maximum effective throughput is determined by tRC = 15 ns (read cycle time), yielding up to ~66.7 MHz sustained random-access rate. Burst reads depend on external controller timing; no internal burst logic or prefetch is implemented.