Infineon Technologies CY7C1009B-20VC

Overview

CY7C1009B-20VC from Cypress Semiconductor is a 128K × 8 (131,072 × 8) high-speed CMOS static RAM with 20 ns access time, TTL-compatible I/O, and dual chip enable (CE1 active-low, CE2 active-high) for flexible memory expansion. It operates at 5V ±10%, supports automatic power-down when deselected, and retains data down to 2.0V in low-power mode. Used in legacy industrial controllers and embedded instrumentation requiring deterministic read/write timing.

For engineers reviewing the CY7C1009B-20VC datasheet, CY7C1009B-20VC pinout, CY7C1009B-20VC application, or CY7C1009B-20VC equivalent, key selection criteria include access time consistency across temperature, CE/OE/WE timing margins, SOJ-300 package compatibility, and CMOS standby current (10 mA max) versus TTL-level interface requirements.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array with tri-state I/O drivers and independent control of chip select logic. Its dual CE architecture allows hierarchical memory mapping without external gating, while OE and WE signals decouple output enable from write initiation - enabling simultaneous read and write arbitration in multi-master systems.

The device uses standard CMOS process technology with TTL-compatible input thresholds (VIH = 2.2 V, VIL = 0.8 V) and guaranteed output drive (IOH = –4 mA, IOL = 8 mA). Power-down behavior is triggered solely by CE1 HIGH or CE2 LOW, independent of OE or WE state, ensuring predictable quiescent current (ISB2 = 10 mA max) during deselect.

Key Specifications

Pinout & Package

Package: 32-pin 300-mil molded SOJ (package code 51-85041), lead pitch 0.05 inches, body width 0.300 inches.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV12816AL-20TQLI, CY7C1009B-20VC offers native 5V TTL compatibility and byte-wide interface; compared with CY7C1009D-20VC, it trades 8× higher standby current for broader legacy system compatibility and established qualification history.

Availability

CY7C1009B-20VC is available at Aetrix Electronics and suitable for industrial PLCs, avionics displays, and medical data loggers requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1009B-20VC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial and automotive markets.

The CY7C1009B belongs to Cypress's legacy parallel SRAM product line, designed specifically for 5V embedded systems requiring deterministic timing, TTL interoperability, and long-lifecycle support in mission-critical equipment.

FAQ

Is CY7C1009B-20VC RoHS compliant?

CY7C1009B-20VC was manufactured prior to full RoHS enforcement and uses leaded solder in its SOJ package. It is not RoHS-compliant; however, Cypress offered Pb-free variants under suffix "VXC" (e.g., CY7C1009B-20VXC), which share identical timing and electrical specs but require requalification for thermal cycling performance.

Can CY7C1009B-20VC operate at 3.3V?

No. The device is specified only for 5.0 V ±10% operation. Applying 3.3V violates the minimum VCC requirement (4.5V), resulting in undefined timing, increased access time, and potential data corruption. It lacks 3.3V-compatible input thresholds or output drive characteristics.

What is the maximum clock frequency supported for read/write cycles?

This is an asynchronous SRAM with no internal clock. Maximum effective throughput is determined by tRC = 20 ns, yielding a theoretical maximum cycle rate of 50 MHz. However, actual system speed depends on address setup/hold, CE/OE/WE timing margins, and PCB trace delays - not a clock signal.

Does CY7C1009B-20VC support battery backup operation?

Yes - it supports data retention down to 2.0V with ISB2 ≤ 10 mA. When VCC drops below 4.5V, the device enters automatic power-down mode and maintains memory contents as long as VCC ≥ 2.0V and CE1 remains HIGH or CE2 remains LOW, making it suitable for battery-backed hold applications.