Infineon Technologies CY7C1009D-10VXI
- Part No.:
- CY7C1009D-10VXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
CY7C1009D-10VXI.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1009D-10VXI from Cypress Semiconductor is a 1-Mbit (128 K × 8) high-speed CMOS static RAM with 10 ns access time, TTL-compatible I/O, and automatic CE power-down. It operates at 5 V ±0.5 V over –40 °C to +85 °C, draws 80 mA active current and 3 mA CMOS standby current, and supports data retention down to 2.0 V - used in industrial microcontroller memory buffers and legacy embedded systems requiring pin-compatible SRAM replacement.
For engineers reviewing the CY7C1009D-10VXI datasheet, CY7C1009D-10VXI pinout, CY7C1009D-10VXI application, or CY7C1009D-10VXI equivalent, key selection criteria include its 32-pin 300-mil SOJ package, dual chip enable (CE1/CE2) for hierarchical memory expansion, tri-state outputs with 5 ns OE-to-data timing, and compatibility with 5 V TTL bus interfaces without level-shifting.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array organized as 131,072 × 8 bits, with independent address decoding (A0–A16), eight bidirectional I/O lines (I/O0–I/O7), and three control inputs (WE, OE, CE1, CE2) enabling flexible read/write gating. Its logic-level thresholds (VIH = 2.2 V min, VIL = 0.8 V max) are strictly TTL-aligned, not CMOS-compatible.
Power management relies on automatic CE-driven power-down: ISB2 = 3 mA occurs when CE1 > VCC – 0.3 V or CE2 < 0.3 V under CMOS input conditions, while ISB1 = 10 mA applies under TTL input assumptions. Data retention at 2.0 V requires full deselection (CE1 HIGH or CE2 LOW) and stable VCC ramp-up >50 µs before operation resumes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 1 Mbit (128 K × 8) - provides byte-wide addressing for 8-bit microcontrollers without external data bus multiplexing |
| Access Time (tAA) | 10 ns - enables direct interfacing with 100 MHz CPU buses where setup/hold margins permit |
| Supply Voltage | 5 V ±0.5 V - requires regulated 5 V rail; not compatible with 3.3 V or mixed-voltage domains without translation |
| Active Current (ICC) | 80 mA at 10 ns - defines thermal budget for dense PCB layouts with multiple SRAMs |
| Standby Current (ISB2) | 3 mA - enables low-power sleep modes in battery-backed industrial controllers |
| Data Retention Voltage | 2.0 V - allows memory state preservation during brown-out or controlled power-down sequences |
| Input Compatibility | TTL only (VIH ≥ 2.2 V, VIL ≤ 0.8 V) - incompatible with CMOS 5 V VIH thresholds (≥3.5 V); requires AN6081 review for legacy processor integration |
Pinout & Package
Package: 32-pin 300-mil wide molded SOJ (Small Outline J-Lead), Pb-free, JEDEC standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128 K-word decode; no internal latching - must be stable before CE1/CE2 assertion |
| I/O0–I/O7 | Bidirectional Data Bus | Tri-state CMOS drivers; high-impedance when deselected (CE1 HIGH or CE2 LOW), OE HIGH, or during write (WE LOW) |
| CE1 | Active-Low Chip Enable | Primary selection signal; device enabled only when CE1 LOW AND CE2 HIGH - enables hierarchical memory banking |
| CE2 | Active-High Chip Enable | Secondary enable; complements CE1 for multi-chip decode trees; invalidates chip if LOW |
| OE | Active-Low Output Enable | Gates output drivers independently of CE state; allows read data to appear without changing chip select |
| WE | Active-Low Write Enable | Controls write cycle initiation; data latched on WE falling edge when CE1 LOW and CE2 HIGH |
| VCC / GND | Power Supply | Single 5 V supply; decoupling required within 10 mm of pins 16 (VCC) and 17 (GND) per layout guidelines |
| NC | No Connect | Pin 18 is unconnected on die - must remain floating or tied to GND per board design rules |
Key Features
| Feature | Design Value |
|---|---|
| Dual Chip Enable (CE1/CE2) | Enables 2-level memory decode for up to 4× density expansion without external logic |
| Automatic Power-Down | Reduces ICC from 80 mA to 3 mA when deselected - eliminates need for external power-gating circuitry |
| TTL-Compatible I/O | Direct interface with legacy 8051, Z80, and 68K-family processors without level shifters |
| 10 ns Read Cycle (tRC) | Supports burst reads at 100 MHz system clock with zero wait states in tightly coupled architectures |
| 2.0 V Data Retention | Maintains stored contents during controlled brown-out events - critical for industrial watchdog recovery sequences |
Applications
| Industrial PLC Memory Buffer | Legacy Microcontroller Code/Data RAM |
|---|---|
|
Use Scenario: Real-time I/O scanning in programmable logic controllers where deterministic memory access latency is required across temperature extremes. IC Role / Device Role: Primary working RAM for ladder logic execution engine, holding status tables and register values. Use Value: 10 ns tAA ensures scan cycle jitter remains below 50 ns, meeting IEC 61131-3 hard real-time constraints at –40 °C to +85 °C. |
Use Scenario: External program/data memory for 8-bit MCUs (e.g., Intel 8051 derivatives) in medical diagnostic equipment with long product lifecycles. IC Role / Device Role: Drop-in replacement for obsolete SRAMs in field-deployed devices requiring RoHS-compliant sourcing. Use Value: Pin- and function-compatibility with CY7C1009B enables zero-hardware-change upgrades while maintaining 5 V TTL signaling integrity. |
| Automotive Body Control Module | Test Equipment Firmware Cache |
|
Use Scenario: Non-volatile configuration storage and runtime variable buffering in body control units operating in under-hood environments. IC Role / Device Role: Dual-role memory: retains calibration data during ignition-off (2.0 V retention), supplies fast access during CAN message processing. Use Value: ISB2 = 3 mA minimizes quiescent drain on vehicle battery during extended parking; 125 °C-rated package supports under-hood thermal profiles. |
Use Scenario: High-speed instruction cache for FPGA-based logic analyzers performing real-time protocol decoding. IC Role / Device Role: Off-chip instruction buffer feeding Xilinx Spartan-6 BRAM controllers via parallel bus interface. Use Value: Tri-state outputs and 5 ns tDOE allow clean bus sharing with multiple peripherals without contention glitches or added glue logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416-10TQLI | 1 Mbit (64 K × 16), 3.3 V core, LVCMOS I/O, 10 ns access, 48-pin TSOP II | Wider data bus (16-bit), lower voltage, incompatible pinout and signaling - requires PCB redesign and level translation | Select only when migrating to 3.3 V systems and needing wider data path; not drop-in |
| CY7C1009DV33-10ZXC | Same 128 K × 8 organization, 3.3 V supply, 10 ns, 44-pin TSOPII, LVCMOS I/O | Requires 3.3 V supply and revised termination; VIH/VIL thresholds incompatible with 5 V TTL buses | Use for new 3.3 V designs where legacy 5 V compatibility is unnecessary |
Compared with IS61LV102416-10TQLI and CY7C1009DV33-10ZXC, CY7C1009D-10VXI uniquely preserves 5 V TTL signaling, 32-pin SOJ footprint, and industrial temperature support - making it the sole viable option for sustaining legacy 5 V embedded systems without hardware modification.
Availability
CY7C1009D-10VXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy microcontroller code/data RAM, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for CY7C1009D-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure markets.
CY7C1009D belongs to Cypress's legacy parallel SRAM product line, engineered specifically for pin- and function-compatible replacement of aging 5 V TTL memory in long-lifecycle embedded systems.
FAQ
Is CY7C1009D-10VXI compatible with 3.3 V systems?
No. CY7C1009D-10VXI requires a 5 V ±0.5 V supply and is specified only for TTL-level inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V). Its 5 V VCC and input thresholds make it incompatible with 3.3 V logic families without level-shifting circuitry, and it lacks 3.3 V operational ratings in its datasheet.
What is the function of the NC pin (Pin 18)?
Pin 18 is a no-connect terminal - physically unconnected to the silicon die. Per Cypress design, it must remain electrically floating or be tied to ground per PCB layout best practices; driving or biasing it may cause undefined behavior or increased leakage.
Can CY7C1009D-10VXI interface directly with modern microcontrollers like ARM Cortex-M series?
Not without level translation. Cortex-M MCUs typically use 3.3 V LVCMOS I/O with VIH ≥ 2.0 V, but CY7C1009D-10VXI's 5 V VCC and TTL output drive (VOH ≥ 2.4 V @ –4 mA) risk overvoltage damage to 3.3 V inputs. A dedicated level shifter or buffer IC is mandatory for safe interfacing.
Does CY7C1009D-10VXI support battery backup operation?
Yes - it supports data retention at 2.0 V VCC when fully deselected (CE1 HIGH or CE2 LOW). However, no internal battery switch or backup controller is integrated; external circuitry (e.g., diode-OR + coin cell) must manage VCC switchover and maintain 2.0–5.5 V compliance during transition.
CY7C1009D-10VXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 32-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
CY7C1009D-10VXI FAQ
1.How can I place an order for CY7C1009D-10VXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1009D-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1009D-10VXI reliable?
The price and inventory of CY7C1009D-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1009D-10VXI is usually 5 days.
3.What payment methods are accepted for CY7C1009D-10VXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1009D-10VXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1009D-10VXI?
CY7C1009D-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1009D-10VXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1009D-10VXI?
For technical support, including CY7C1009D-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1009D-10VXI requirements.
6.How does Aetrix verify that CY7C1009D-10VXI is sourced from the original manufacturer or authorized distributors?
All CY7C1009D-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1009D-10VXI meets industry standards.
7.What is the process for return or replacement of CY7C1009D-10VXI?
All CY7C1009D-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1009D-10VXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1009D-10VXI part is unused and in its original packaging.
Return procedure for CY7C1009D-10VXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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