Infineon Technologies CY7C1009D-10VXIT

Overview

CY7C1009D-10VXIT from Cypress Semiconductor is a 1-Mbit (128 K × 8) high-speed CMOS static RAM with 10 ns access time, 5 V supply operation, TTL-compatible I/O, and automatic CE power-down. It features 32-pin 300-mil SOJ packaging, 2.0 V data retention, and dual chip enable (CE1 active LOW, CE2 active HIGH) for flexible memory expansion in embedded control systems.

For engineers reviewing the CY7C1009D-10VXIT datasheet, CY7C1009D-10VXIT pinout, CY7C1009D-10VXIT application, or CY7C1009D-10VXIT equivalent, key selection criteria include tAA ≤ 10 ns read timing, ISB2 = 3 mA CMOS standby current, VCC = 5 V ± 0.5 V operation, and compatibility with legacy 5 V microcontrollers requiring TTL-level inputs.

Technical Context

The CY7C1009D-10VXIT implements a synchronous, non-volatile-retentive SRAM architecture with tri-state bidirectional I/O drivers and independent CE1/CE2 control logic enabling hierarchical memory mapping. Its address decoding supports full 17-bit addressing (A0–A16) for 131,072 × 8-bit organization and uses internal sense amplifiers for reliable read stability under varying load conditions.

Power management is handled via automatic CE-driven power-down: ISB2 = 3 mA is achieved when CE1 > VCC – 0.3 V or CE2 < 0.3 V with CMOS input thresholds, while ISB1 = 10 mA applies under TTL input conditions. Data retention at VDR = 2.0 V is supported with tCDR = 0 ns chip deselect-to-retention transition.

Key Specifications

Pinout & Package

Package: 32-pin 300-mil wide molded SOJ (Small Outline J-lead), RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with AS6C1008-10TIN and IS61LV102410AL-10TLI, CY7C1009D-10VXIT uniquely supports 5 V TTL interfacing and dual CE expansion without voltage translation or board redesign-making it the only drop-in replacement for existing industrial 5 V SRAM sockets.

Availability

CY7C1009D-10VXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ECU scratchpad, and medical infusion pump memory requiring stable component supply and long-lifecycle support.

Supply support for CY7C1009D-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and consumer applications.

The CY7C1009D belongs to Cypress's legacy parallel SRAM product line, designed specifically for pin-compatible migration from older NMOS and CMOS SRAMs in 5 V embedded systems requiring deterministic timing and TTL-level interoperability.

FAQ

Is CY7C1009D-10VXIT compatible with 3.3 V systems?

No. The device requires VCC = 5.0 V ± 0.5 V and specifies TTL input thresholds (VIH = 2.2 V min, VIL = 0.8 V max). Driving inputs from 3.3 V logic may result in marginal VIH margin and is not guaranteed per datasheet electrical characteristics. Use level translators or select a 3.3 V SRAM variant.

What is the function of the NC pin on CY7C1009D-10VXIT?

Pin 18 is marked NC (No Connect) in the 32-pin SOJ pinout and is not bonded to the die. It must remain unconnected on the PCB; routing traces or applying voltage to this pin violates the device's maximum ratings and may cause functional failure or accelerated wear-out.

Does CY7C1009D-10VXIT support asynchronous burst reads?

No. It is a static RAM with no internal burst counter or sequential address generation. Each read requires a full address setup (tAA = 10 ns) and valid CE1/OE assertion. Burst transfers must be implemented externally via address sequencing logic or processor DMA with individual address writes.

Can CY7C1009D-10VXIT retain data during VCC ramp-down?

Yes. When VCC drops to ≥2.0 V and CE1 is deasserted (HIGH) or CE2 is deasserted (LOW), the device enters data retention mode with ICCDR ≤ 3 mA. Data remains valid as long as VCC stays ≥2.0 V and temperature remains within –40 °C to +85 °C; no external hold signal is required.