Infineon Technologies CY7C1010DV33-10VXI
- Part No.:
- CY7C1010DV33-10VXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1010DV33-10VXI.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 36SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:3,051
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Product details
Overview
CY7C1010DV33-10VXI from Cypress Semiconductor is a 2-Mbit (256 K × 8) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, TTL-compatible I/O, and automatic CE-controlled power-down. It operates across –40 °C to +85 °C and supports memory expansion via active-low CE, OE, and WE controls in industrial embedded systems requiring deterministic timing and low standby current.
For engineers reviewing the CY7C1010DV33-10VXI datasheet, CY7C1010DV33-10VXI pinout, CY7C1010DV33-10VXI application, or CY7C1010DV33-10VXI equivalent, key selection criteria include tAA ≤ 10 ns read access, ISB2 = 10 mA CMOS standby current, 2.0 V data retention capability, 36-pin SOJ/44-pin TSOP II package options, and compatibility with CY7C1010CV33 for drop-in replacement in legacy SRAM designs.
Technical Context
The device implements a synchronous, non-volatile-retentive static RAM architecture with full address decoding (A0–A17), bidirectional 8-bit I/O bus (I/O0–I/O7), and three-state output drivers controlled by CE, OE, and WE. Its dual-power-mode operation enables automatic transition to low-power ISB2 state when CE is deasserted.
Timing behavior is defined by strict AC parameters including tACE ≤ 10 ns (CE LOW to data valid), tDOE ≤ 5 ns (OE LOW to data valid), and tHZOE ≤ 5 ns (OE HIGH to high-Z), ensuring predictable interface timing in microcontroller and FPGA memory subsystems without external wait-state logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256 K × 8 bits = 2 Mbit; supports byte-wide data transfers without banking or interleaving |
| Access Time (tAA) | 10 ns max; guarantees data valid within 10 ns of stable address and CE/OE assertion |
| VCC Supply | 3.3 V ± 0.3 V; compatible with standard LVTTL and 3.3 V logic families |
| Active Current (ICC) | 90 mA max at 100 MHz; defines peak dynamic power during continuous read/write cycling |
| CMOS Standby Current (ISB2) | 10 mA max; enables ultra-low-power retention mode when CE is HIGH and inputs are CMOS-level stable |
| Data Retention Voltage | 2.0 V min; allows memory contents to be held during brown-out or controlled power-suspend sequences |
| Operating Temperature | –40 °C to +85 °C; qualified for industrial-grade reliability without derating |
Pinout & Package
Available in 36-pin SOJ and 44-pin TSOP II packages with center power/ground pinout. The -10VXI suffix denotes the 44-pin TSOP II variant with industrial temperature grade and Pb-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus selecting one of 256 K locations; A0 = LSB, A17 = MSB |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tristatable I/O lines shared for read data output and write data input |
| CE | Chip Enable | Active-low global enable; forces device into ISB2 standby when HIGH |
| OE | Output Enable | Active-low control for data output drivers only; does not affect write path |
| WE | Write Enable | Active-low signal enabling write cycle when CE is also LOW |
| VCC | Power Supply | Two dedicated 3.3 V pins (pins 35, 36 in TSOP II); reduces IR drop and noise coupling |
| GND | Ground | Two dedicated ground pins (pins 33, 34 in TSOP II); improves signal integrity and thermal dissipation |
| NC | No Connect | Pins 1, 2, 37–40, 42–44 in TSOP II; unconnected on die; must remain floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Pin- and function-compatible with CY7C1010CV33 | Enables direct replacement in existing PCB layouts without redesign or firmware changes |
| Automatic CE-controlled power-down | Reduces system standby power without requiring external control logic or sequencing |
| TTL-compatible inputs and outputs | Eliminates level-shifting circuitry when interfacing with 3.3 V or 5 V microcontrollers |
| 2.0 V data retention | Permits safe memory hold during partial power-down of host system while preserving critical state |
| Center VCC/GND pinout | Improves power delivery uniformity and reduces simultaneous switching noise in high-density layouts |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: Byte-wide SRAM providing zero-wait-state read/write access for cyclic data exchange between CPU and fieldbus peripherals. Use Value: 10 ns tAA ensures full data capture within single 100 ns PLC scan window; ISB2 = 10 mA minimizes energy use during idle cycles. | Use Scenario: Temporary storage of uncompressed grayscale image frames during acquisition in portable ultrasound devices. IC Role / Device Role / Timing Role: High-reliability frame buffer supporting burst-mode writes from ADC and sequential reads to display controller. Use Value: 256 K × 8 capacity holds one 512×512×8-bit frame; 2.0 V data retention preserves last acquired image during battery switchover. |
| Avionics Data Logger | Test Equipment Pattern Memory |
Use Scenario: Non-volatile event logging in flight data recorders where power interruption is possible during turbulence or fault conditions. IC Role / Device Role / Timing Role: SRAM used with external backup capacitor and voltage monitor to maintain log integrity during brief power loss. Use Value: 2.0 V data retention threshold aligns with capacitor discharge profile; tPD ≤ 10 ns ensures fast reactivation after power recovery. | Use Scenario: Storage of digital stimulus/response patterns in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-speed pattern memory accessed synchronously with test clock to drive DUT pins at up to 100 MHz. Use Value: tRC = 10 ns supports 100 MHz pattern rate; tristate I/O enables shared bus architecture with multiple memory banks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1010CV33-10VI | Same 256 K × 8 organization and 10 ns speed, but uses older CV33 process; higher ISB2 = 20 mA (TTL standby) | Compatible in same socket but draws more standby current; unsuitable for battery-backed systems requiring <15 mA retention | Select only if legacy board revision mandates CV33 mask set or cost sensitivity outweighs power savings |
| AS6C4008-10TIN | Pin-compatible 256 K × 8 SRAM; identical 10 ns tAA, but ISB2 = 25 µA (vs. 10 mA), no 2.0 V retention spec | Superior standby efficiency, but lacks guaranteed data hold below 3.0 V; requires external retention management | Prefer for always-on systems with tight power budgets; avoid where brown-out resilience is required |
Compared with CY7C1010CV33-10VI, CY7C1010DV33-10VXI delivers 50% lower CMOS standby current and verified 2.0 V data retention, making it superior for power-constrained industrial logging. Against AS6C4008-10TIN, it trades ultra-low ISB2 for guaranteed low-voltage retention-critical when system-level power sequencing cannot be tightly controlled.
Availability
CY7C1010DV33-10VXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, avionics data loggers, and test equipment pattern memories requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1010DV33-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial, automotive, and consumer applications.
The CY7C1010D series was designed specifically for high-reliability, low-latency SRAM applications in industrial control and instrumentation systems where deterministic timing, wide temperature operation, and robust power management are essential.
FAQ
Is CY7C1010DV33-10VXI pin-compatible with CY7C1010CV33-10VI?
Yes, CY7C1010DV33-10VXI is fully pin- and function-compatible with CY7C1010CV33-10VI, sharing identical 44-pin TSOP II footprint, address/data pin mapping, and control signal assignments. However, DV33 uses an updated process that reduces ISB2 from 20 mA to 10 mA and adds verified 2.0 V data retention-no PCB change is needed for migration.
What is the maximum operating frequency supported by CY7C1010DV33-10VXI?
CY7C1010DV33-10VXI supports a maximum read/write cycle rate of 100 MHz, derived from its 10 ns tRC (read cycle time) and tWC (write cycle time). At this rate, ICC peaks at 90 mA under worst-case conditions; actual frequency depends on system timing margins, board layout, and VCC stability.
Can CY7C1010DV33-10VXI retain data at 2.0 V while fully deselected?
Yes-when CE is held HIGH and all inputs are stabilized at CMOS levels (VIN > VCC – 0.3 V or VIN < 0.3 V), the device enters ISB2 mode and reliably retains stored data down to VCC = 2.0 V, as validated in the datasheet's Data Retention Characteristics table (page 6).
Does CY7C1010DV33-10VXI require external pull-up resistors on control lines?
No-CY7C1010DV33-10VXI has TTL-compatible inputs with VIH(min) = 2.0 V and VIL(max) = 0.8 V, allowing direct connection to 3.3 V logic outputs without pull-ups. Pull-ups are only needed if driving from open-drain or weak-sourcing sources, or when implementing wired-OR logic with multiple CE/OE signals.
CY7C1010DV33-10VXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
CY7C1010DV33-10VXI FAQ
1.How can I place an order for CY7C1010DV33-10VXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1010DV33-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1010DV33-10VXI reliable?
The price and inventory of CY7C1010DV33-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1010DV33-10VXI is usually 5 days.
3.What payment methods are accepted for CY7C1010DV33-10VXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1010DV33-10VXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1010DV33-10VXI?
CY7C1010DV33-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1010DV33-10VXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1010DV33-10VXI?
For technical support, including CY7C1010DV33-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1010DV33-10VXI requirements.
6.How does Aetrix verify that CY7C1010DV33-10VXI is sourced from the original manufacturer or authorized distributors?
All CY7C1010DV33-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1010DV33-10VXI meets industry standards.
7.What is the process for return or replacement of CY7C1010DV33-10VXI?
All CY7C1010DV33-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1010DV33-10VXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1010DV33-10VXI part is unused and in its original packaging.
Return procedure for CY7C1010DV33-10VXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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