Infineon Technologies CY7C1011CV33-10BAJXET

Overview

CY7C1011CV33-10BAJXET from Infineon Technologies (formerly Cypress) is an automotive-grade 2-Mbit (128 K × 16) CMOS static RAM with 10 ns access time, 3.3 V ±10% supply, and –40 °C to +125 °C operation. It supports independent byte-wide writes via BLE/BHE controls, automatic CE-driven power-down (15 mA standby), and high-impedance I/O during deselect or write cycles - deployed in engine control units and ADAS domain controllers requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1011CV33-10BAJXET datasheet, CY7C1011CV33-10BAJXET pinout, CY7C1011CV33-10BAJXET application, or CY7C1011CV33-10BAJXET equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 15 mA CMOS standby current, dual-byte enable architecture, and Pb-free 48-ball BGA (10 mm × 10 mm, 0.8 mm pitch) packaging for high-density automotive PCBs.

Technical Context

This SRAM implements a synchronous, address-decoded 131,072 × 16-bit array with separate row/column decoders and sense amplifiers. Its control logic enforces strict timing dependencies: tACE ≤ 10 ns, tDOE ≤ 6 ns, and tHZOE ≤ 5 ns under 30 pF load, ensuring reliable interface with automotive microcontrollers operating at ≥100 MHz bus clocks.

The device uses TTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and CMOS-level output drive (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA), with automatic high-Z assertion on CE HIGH, OE HIGH, BHE/BLE HIGH, or WE LOW - eliminating external bus contention logic in multi-SRAM systems.

Key Specifications

Pinout & Package

48-ball Pb-free BGA package (JEDEC MO-270AB, 10 mm × 10 mm body, 0.8 mm ball pitch) with thermal pad exposed on underside for enhanced heat transfer in automotive modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV102416AL-10TLI and AS6C4008-10TIN, CY7C1011CV33-10BAJXET uniquely delivers automotive-grade reliability, true independent byte write capability, and integrated power-down - making it the only option for ASIL-B compliant memory subsystems requiring deterministic timing and thermal robustness.

Availability

CY7C1011CV33-10BAJXET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric power steering systems requiring stable component supply across extended automotive lifecycles.

Supply support for CY7C1011CV33-10BAJXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power systems, automotive ICs, and security solutions, with headquarters in Munich, Germany.

This device belongs to Infineon's automotive SRAM product line, engineered specifically for real-time, safety-critical memory applications in engine, chassis, and driver assistance systems where deterministic access timing and extended temperature operation are mandatory.

FAQ

What is the minimum VCC required to retain data in CY7C1011CV33-10BAJXET?

Data retention is guaranteed down to 2.0 V across the full automotive temperature range (–40 °C to +125 °C), enabling operation during cold-crank battery dips without data loss. This specification is verified per AEC-Q100 stress test conditions and does not require external backup capacitors or supervisory circuits.

Does CY7C1011CV33-10BAJXET support simultaneous read and write operations?

No, it is a single-port SRAM and does not support true simultaneous read/write. However, its independent BLE/BHE controls allow byte-selective writes while preserving other bytes - reducing effective write latency in burst-access scenarios typical of CAN FD message buffering.

How is thermal performance managed in the 48-ball BGA package?

The package features four dedicated VSS balls and dual VCC balls to minimize IR drop and inductance, plus a thermally enhanced die attach and exposed thermal pad. Measured θJA is 38.15 °C/W on a 4-layer automotive PCB, allowing continuous operation at 125 °C ambient with ≤468 mW power dissipation.

Can CY7C1011CV33-10BAJXET be used with 5 V-tolerant microcontrollers?

Its inputs tolerate up to VCC + 0.5 V (≤3.8 V), so direct connection to 5 V logic requires level translation. The device does not support 5 V operation or 5 V-tolerant inputs - using it with 5 V MCUs without translators risks permanent damage per Absolute Maximum Ratings (V_I ≤ VCC + 0.5 V).