Infineon Technologies CY7C1011DV33-10BVI

Overview

CY7C1011DV33-10BVI from Cypress Semiconductor is a 2-Mbit (128 K × 16) asynchronous CMOS static RAM with 10 ns access time, 3.3 V supply, and independent byte-wide write control via BHE/ BLE. It operates across –40 °C to +85 °C and supports automatic CE power-down to 10 mA standby current. Used in industrial embedded controllers requiring fast, low-power, non-volatile-retentive data buffering.

For engineers reviewing the CY7C1011DV33-10BVI datasheet, CY7C1011DV33-10BVI pinout, CY7C1011DV33-10BVI application, or CY7C1011DV33-10BVI equivalent, key selection criteria include tAA ≤ 10 ns read timing, dual-byte enable architecture, TSOP II/VFBGA package compatibility, and data retention down to 2.0 V.

Technical Context

The CY7C1011DV33-10BVI implements a fully asynchronous SRAM core with separate high- and low-byte write enables (BHE, BLE), enabling partial-word writes without external logic. Its address space spans A0–A16 (131,072 addresses), supporting 16-bit wide data I/O (I/O0–I/O15).

It features TTL/CMOS-compatible input thresholds, high-impedance outputs during deselect (CE HIGH), OE HIGH, or write cycles, and automatic power-down when CE is deasserted-reducing ICC to ISB2 = 10 mA at 3.3 V with CMOS inputs.

Key Specifications

Pinout & Package

Available in Pb-free 44-pin TSOP II (standard center power/ground pinout) and 48-ball VFBGA packages. Pin functions are identical across both packages; ball/pin numbering differs per mechanical layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV102416AL-10MLI and MC10116P, CY7C1011DV33-10BVI uniquely combines 3.3 V operation, true dual-byte write enable, 2.0 V data retention, and industry-standard TSOP II/VFBGA footprints-making it optimal for modern industrial and medical embedded systems requiring robust, low-power, flexible memory interfacing.

Availability

CY7C1011DV33-10BVI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and avionics sensor fusion hubs requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1011DV33-10BVI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

CY7C1011DV33 belongs to Cypress's high-speed asynchronous SRAM product line, engineered for deterministic timing, low-power standby, and seamless integration into 3.3 V embedded control and data acquisition systems.

FAQ

What is the minimum VCC required to retain data in CY7C1011DV33-10BVI?

Data retention is guaranteed down to VCC = 2.0 V with CE held HIGH and inputs biased to valid logic levels. At this voltage, ICCDR remains ≤10 mA, and memory contents persist indefinitely as long as VCC stays ≥2.0 V-enabling reliable operation during brown-out conditions without external backup capacitors.

Can CY7C1011DV33-10BVI operate with mixed 3.3 V and 5 V logic interfaces?

No. All inputs (CE, OE, WE, BLE, BHE, A0–A16, I/O0–I/O15) are strictly 3.3 V tolerant with VIH(max) = VCC + 0.3 V and VIL(min) = –0.3 V. Direct connection to 5 V logic violates absolute maximum ratings and risks latch-up or permanent damage. Level-shifting circuitry is mandatory for 5 V system integration.

Does CY7C1011DV33-10BVI support concurrent read and write operations?

No. It is a single-port asynchronous SRAM with no internal arbitration logic. Read and write operations are mutually exclusive: WE must be HIGH for reads and LOW for writes. Attempting simultaneous access causes undefined data on I/O lines and violates AC timing specifications such as tHZOE and tHZWE.

How does the automatic power-down mode activate and what current does it draw?

Automatic power-down activates when CE is driven HIGH while all inputs are held within valid CMOS logic ranges (VIN > VCC – 0.3 V or VIN < 0.3 V). In this state, ISB2 draws ≤10 mA at VCC = 3.3 V and TA = 85 °C-verified per DC Electrical Characteristics table in Rev. *H datasheet, page 4.