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Infineon Technologies CY7C1011DV33-10BVIT
- Part No.:
- CY7C1011DV33-10BVIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1011DV33-10BVIT.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,683
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Product details
Overview
CY7C1011DV33-10BVIT from Cypress Semiconductor is a 2-Mbit (128 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and dual-byte write control via BHE/ BLE. It operates across –40 °C to +85 °C, supports automatic CE power-down (ISB2 = 10 mA), and retains data at 2.0 V - used in industrial embedded controllers requiring fast, low-power, non-volatile SRAM buffering.
For engineers reviewing the CY7C1011DV33-10BVIT datasheet, CY7C1011DV33-10BVIT pinout, CY7C1011DV33-10BVIT application, or CY7C1011DV33-10BVIT equivalent, key selection criteria include tAA ≤ 10 ns read timing, independent upper/lower byte enable, TSOP II / VFBGA package compatibility, and TTL/CMOS input thresholds for legacy bus interfacing.
Technical Context
The device implements a synchronous, address-decoded 128 K × 16 memory array with separate Byte High Enable (BHE) and Byte Low Enable (BLE) inputs enabling granular 8-bit writes without external logic. Read operations require CE and OE asserted low while WE remains high; write operations require CE and WE low, with data latched on the falling edge of the last active control signal.
It features two distinct standby modes: ISB1 (20 mA, TTL-compatible inputs) and ISB2 (10 mA, CMOS-compatible inputs), triggered automatically upon CE deassertion. Data retention at 2.0 V enables battery-backed operation during brownout conditions, and output high-impedance states are rigorously controlled by CE, OE, BHE, and BLE transitions per AC switching specs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns maximum - guarantees data valid within 10 ns after address stable, enabling 100 MHz bus timing. |
| ICC (active) | 90 mA at 10 ns - defines peak dynamic current draw during burst reads/writes at max speed. |
| ISB2 (standby) | 10 mA - ultra-low CMOS standby current when CE inactive, critical for low-power hold modes. |
| VDR | 2.0 V minimum - allows reliable data retention during undervoltage events or backup battery operation. |
| Organization | 128 K × 16 - provides 262,144 bytes of random-access storage with native 16-bit data bus alignment. |
| Supply voltage | 3.3 V ± 0.3 V - requires tightly regulated 3.3 V rail; not compatible with 5 V or mixed-voltage buses. |
| Input thresholds | VIH = 2.0 V min, VIL = 0.8 V max - supports direct interface with 3.3 V LVTTL and CMOS logic families. |
Pinout & Package
Available in Pb-free 44-pin TSOP II (center power/ground pinout) and 48-ball VFBGA packages. This part (CY7C1011DV33-10BVIT) uses the 44-pin TSOP II package per ordering code suffix "BVI".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 128 K-word addressing; A16 required for top half of memory map. |
| I/O0–I/O7 | Data bus (lower byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; high-Z when BLE or CE inactive. |
| I/O8–I/O15 | Data bus (upper byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; independent timing from lower byte. |
| CE | Chip Enable | Primary device select; forces automatic power-down and high-Z I/O when HIGH; controls tPU/tPD timing. |
| OE | Output Enable | Read strobe; enables output drivers only when CE = LOW and OE = LOW; determines tDOE/tHZOE delays. |
| WE | Write Enable | Write strobe; initiates write cycle when CE = LOW and WE = LOW; defines tWC, tPWE, and tSD timing windows. |
| BLE | Byte Low Enable | Selects lower data byte (I/O0–I/O7) for write/read; enables partial writes without masking logic. |
| BHE | Byte High Enable | Selects upper data byte (I/O8–I/O15); allows simultaneous or independent 8-bit writes to both bytes. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-byte write control | Independent BHE/BLE pins enable true 8-bit granularity writes - eliminates need for external byte-mask logic in 16-bit systems. |
| Automatic CE power-down | Reduces ICC to ISB2 = 10 mA when CE is deasserted - cuts standby power by >90% vs active mode without software intervention. |
| Data retention at 2.0 V | Maintains stored data with VCC as low as 2.0 V - supports seamless transition to backup battery or brownout recovery without data loss. |
| Pin- and function-compatible with CY7C1011CV33 | Direct drop-in replacement for earlier -CV33 variant - preserves board layout, firmware, and timing margins in upgrade paths. |
| Low capacitance I/O | CIN/COUT = 8 pF - minimizes signal loading on 3.3 V buses, enabling longer trace lengths and higher noise immunity. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Fast-access SRAM holding process image data between CPU fetches and field I/O updates. Use Value: 10 ns tAA ensures sub-microsecond memory access, synchronizing with 100 MHz controller buses without wait states. |
Use Scenario: Temporary frame storage in portable ultrasound devices during analog-to-digital conversion bursts. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer capturing 16-bit pixel streams from ADC pipelines. Use Value: Dual-byte enables parallel capture of upper/lower pixel nibbles, doubling effective throughput vs single-byte SRAM. |
| Avionics Data Logger | Test Equipment Pattern Memory |
Use Scenario: Non-volatile event logging in flight data recorders where power interruption is possible. IC Role / Device Role / Timing Role: Retentive memory holding critical telemetry snapshots during voltage dips or resets. Use Value: 2.0 V data retention allows continued storage during 3.3 V rail collapse, bridging gaps until backup power engages. |
Use Scenario: Vector pattern storage in automated test equipment generating high-speed digital stimulus waveforms. IC Role / Device Role / Timing Role: Static memory delivering deterministic 10 ns read latency to pattern sequencers. Use Value: Tight tAA/tRC tolerances ensure precise timing alignment between pattern clock and output data edges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV12816AL-10TLI | 10 ns access, same 128 K × 16 organization, but 3.3 V only, no data retention below 2.7 V. | Lacks 2.0 V data retention; unsuitable for brownout-critical systems. | Choose for cost-sensitive industrial designs where full 3.3 V rail stability is guaranteed. |
| AS6C1008-10TIN | 10 ns access, 128 K × 8 organization - requires two devices for 16-bit bus width. | Doubles PCB footprint and routing complexity; increases power vs single 16-bit device. | Use only if existing design uses 8-bit SRAMs or requires vendor diversification with identical timing. |
Compared with IS61LV12816AL-10TLI and AS6C1008-10TIN, CY7C1011DV33-10BVIT uniquely combines 10 ns performance, true 16-bit bus, and 2.0 V data retention - making it optimal for space-constrained, fault-tolerant embedded systems where power integrity cannot be assumed.
Availability
CY7C1011DV33-10BVIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, and avionics data loggers requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for CY7C1011DV33-10BVIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
This device belongs to Cypress's legacy high-speed asynchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time control and instrumentation systems.
FAQ
Is CY7C1011DV33-10BVIT pin-compatible with CY7C1011CV33?
Yes - it is explicitly pin- and function-compatible per the datasheet. Both share identical 44-pin TSOP II pinout, address/data/control signal mapping, and AC/DC electrical specifications. No PCB redesign or firmware changes are needed for migration from CV33 to DV33.
What is the minimum VCC required to retain data without corruption?
The device guarantees data retention down to VCC = 2.0 V, as specified in the Data Retention Characteristics table. Below 2.0 V, data integrity is not assured; operation below VCC(min) = 3.0 V is permitted only in retention mode with CE disabled.
Can BLE and BHE be asserted simultaneously for full 16-bit access?
Yes - asserting both BLE and BHE LOW enables concurrent read/write access to all 16 I/O lines. The truth table confirms this is a supported mode, and timing parameters (tDBE, tLZBE) are characterized for combined byte enable operation.
Does this SRAM require an external clock or refresh circuitry?
No - it is a fully static RAM with no clock input and zero refresh requirement. Data remains valid indefinitely as long as VCC stays within operating range and CE is asserted during access; no periodic refresh cycles or timing controllers are needed.
CY7C1011DV33-10BVIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1011DV33-10BVIT FAQ
1.How can I place an order for CY7C1011DV33-10BVIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1011DV33-10BVIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1011DV33-10BVIT reliable?
The price and inventory of CY7C1011DV33-10BVIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1011DV33-10BVIT is usually 5 days.
3.What payment methods are accepted for CY7C1011DV33-10BVIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1011DV33-10BVIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1011DV33-10BVIT?
CY7C1011DV33-10BVIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1011DV33-10BVIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1011DV33-10BVIT?
For technical support, including CY7C1011DV33-10BVIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1011DV33-10BVIT requirements.
6.How does Aetrix verify that CY7C1011DV33-10BVIT is sourced from the original manufacturer or authorized distributors?
All CY7C1011DV33-10BVIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1011DV33-10BVIT meets industry standards.
7.What is the process for return or replacement of CY7C1011DV33-10BVIT?
All CY7C1011DV33-10BVIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1011DV33-10BVIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1011DV33-10BVIT part is unused and in its original packaging.
Return procedure for CY7C1011DV33-10BVIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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