Infineon Technologies CY7C1011DV33-10BVXI

Overview

CY7C1011DV33-10BVXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) asynchronous CMOS static RAM with 10 ns access time, 3.3 V supply, and dual-byte write control via BHE/ BLE. It operates across –40 °C to +85 °C and supports automatic CE power-down with ISB2 = 10 mA, used in industrial embedded controllers requiring fast, low-power, nonvolatile-critical data buffering.

For engineers reviewing the CY7C1011DV33-10BVXI datasheet, CY7C1011DV33-10BVXI pinout, CY7C1011DV33-10BVXI application, or CY7C1011DV33-10BVXI equivalent, key selection factors include tAA = 10 ns read timing, independent high/low byte enable, VFBGA/TSOP II package options, and data retention down to 2.0 V.

Technical Context

This SRAM implements full asynchronous operation with separate Chip Enable (CE), Output Enable (OE), and Write Enable (WE) controls, enabling precise bus arbitration in multi-master systems. Its dual-byte architecture allows selective 8-bit writes to upper (I/O8–I/O15, controlled by BHE) or lower (I/O0–I/O7, controlled by BLE) data lanes without affecting adjacent bytes.

The device enters automatic low-power standby (ISB2 = 10 mA) when CE is deasserted, and retains stored data at VCC ≥ 2.0 V. Input/output pins enter high-impedance state during deselection, OE HIGH, or write cycles-ensuring clean bus isolation in shared-memory architectures.

Key Specifications

Pinout & Package

Available in Pb-free 48-ball VFBGA (package code BV) and 44-pin TSOP II. The CY7C1011DV33-10BVXI uses the VFBGA variant with center power/ground layout optimized for signal integrity and thermal dissipation in dense PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV102416AL-10TLI and AS6C1008-10TIN, CY7C1011DV33-10BVXI uniquely delivers dual-byte control, 2.0 V data retention, and VFBGA packaging-making it optimal for space-constrained, fault-tolerant industrial designs where partial writes and voltage resilience are mandatory.

Availability

CY7C1011DV33-10BVXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame store, and avionics sensor interface modules requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1011DV33-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY7C1011DV33 belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded systems with strict power and environmental constraints.

FAQ

What is the maximum clock frequency supported by CY7C1011DV33-10BVXI?

CY7C1011DV33-10BVXI is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (tAA = 10 ns) and cycle time (tRC = 10 ns), allowing reliable operation with bus frequencies up to 100 MHz when interfaced with controllers that meet setup/hold timing requirements. No internal clock circuitry exists.

Does CY7C1011DV33-10BVXI support true 8-bit write operations?

Yes. The device supports independent 8-bit writes using Byte High Enable (BHE) and Byte Low Enable (BLE) inputs. When BLE is LOW and BHE is HIGH, only I/O0–I/O7 are written; when BHE is LOW and BLE is HIGH, only I/O8–I/O15 are written-enabling true byte-granularity without read-modify-write cycles.

Can CY7C1011DV33-10BVXI operate at 2.5 V supply?

No. The device is specified only for 3.3 V ± 0.3 V (i.e., 3.0 V to 3.6 V). Operation outside this range violates Absolute Maximum Ratings and invalidates AC/DC specifications. While data retention is guaranteed down to 2.0 V, functional operation requires VCC within the stated operating range.

Is the VFBGA package of CY7C1011DV33-10BVXI RoHS-compliant?

Yes. The "BV" suffix denotes a Pb-free, RoHS-compliant 48-ball VFBGA package. Cypress documentation confirms compliance with EU RoHS Directive 2011/65/EU and China RoHS, with lead content < 0.1 wt% and full material declarations available in the manufacturer's PPAP documentation.