Infineon Technologies CY7C1011DV33-10ZSXIT

Overview

CY7C1011DV33-10ZSXIT from Cypress Semiconductor is a 2-Mbit (128 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and independent byte enable (BHE/ BLE) for 16-bit data bus partitioning. It supports automatic CE-controlled power-down, data retention at 2.0 V, and operates across –40 °C to +85 °C for industrial embedded memory applications.

For engineers reviewing the CY7C1011DV33-10ZSXIT datasheet, CY7C1011DV33-10ZSXIT pinout, CY7C1011DV33-10ZSXIT application, or CY7C1011DV33-10ZSXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 10 µA standby current, dual-byte write control, TSOP II / VFBGA package options, and compatibility with legacy CY7C1011CV33-based designs.

Technical Context

The device implements a synchronous, non-volatile-retentive SRAM architecture with fully decoded 17-bit address space (A0–A16), supporting concurrent upper- and lower-byte writes via separate BHE and BLE controls. Its I/O pins (I/O0–I/O15) enter high-impedance state during deselection (CE HIGH), output disable (OE HIGH), or write cycles (WE LOW).

Timing behavior is defined by strict AC parameters including tACE = 10 ns (CE LOW to data valid), tDOE = 5 ns (OE LOW to data valid), and tPD = 10 ns (CE HIGH to power-down), enabling integration into fast microcontroller and FPGA memory interfaces requiring deterministic latency and low-power idle states.

Key Specifications

Pinout & Package

Available in Pb-free 44-pin TSOP II (standard center power/ground pinout) and 48-ball VFBGA packages. This part uses the TSOP II variant per ordering code "ZSXIT".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV102416AL-10TLI and W9825G6JH-10, CY7C1011DV33-10ZSXIT delivers guaranteed 2.0 V data retention and deterministic 10 ns access without refresh management - critical for safety-critical industrial and medical systems where memory predictability is non-negotiable.

Availability

CY7C1011DV33-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, and avionics display controller caches requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1011DV33-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

The CY7C1011DV33 belongs to Cypress's high-reliability parallel SRAM product line, designed specifically for deterministic, low-latency memory expansion in resource-constrained embedded systems where refresh-free operation and wide temperature tolerance are mandatory.

FAQ

Is CY7C1011DV33-10ZSXIT pin-compatible with CY7C1011CV33?

Yes, it is pin- and function-compatible per the datasheet Feature section. Both share identical 44-pin TSOP II pinout, address/data/control signal mapping, and timing behavior. No PCB redesign or firmware modification is required for migration, though voltage tolerance and standby current specs differ slightly.

What is the maximum operating frequency supported by this SRAM?

The device does not operate on a clock signal; its performance is defined by asynchronous timing parameters. With tRC = 10 ns, it supports up to 100 MHz effective bus throughput in continuous read/write cycles. System-level frequency depends on controller timing margins, not an internal clock.

Does this part require external refresh circuitry?

No. As a static RAM, CY7C1011DV33-10ZSXIT retains data indefinitely while powered and enabled, with no refresh cycles needed. Data retention continues down to 2.0 V VCC without external support, distinguishing it from DRAM or pseudo-SRAM devices.

Can BHE and BLE be asserted simultaneously for full 16-bit access?

Yes. Asserting both BHE and BLE LOW enables full 16-bit read or write operations across I/O0–I/O15. The device treats this as a unified 16-bit transaction - no internal arbitration or timing penalty applies when both byte enables are active.