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Infineon Technologies CY7C1011G30-10BAJXET
- Part No.:
- CY7C1011G30-10BAJXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1011G30-10BAJXET.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,640
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Product details
Overview
CY7C1011G30-10BAJXET from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 2-Mbit static RAM with embedded single-bit error-correcting code (ECC), 128K × 16-bit organization, 10 ns access time, and operation over –40 °C to +125 °C. It delivers ECC protection for safety-critical memory in engine control units, ADAS domain controllers, and automotive infotainment systems.
For engineers reviewing the CY7C1011G30-10BAJXET datasheet, CY7C1011G30-10BAJXET pinout, CY7C1011G30-10BAJXET application, or CY7C1011G30-10BAJXET equivalent, key selection factors include its Automotive-E grade temperature range, 2.2–3.6 V supply, dual-byte enable architecture (BHE/ BLE), low 6 mA typical standby current, and VFBGA-48 package compatibility with high-density automotive PCB layouts.
Technical Context
The CY7C1011G30-10BAJXET implements a synchronous CMOS SRAM core with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on every read cycle without requiring external logic or software intervention. Its address space spans A0–A16 (17 bits), supporting full 128K-word addressing with byte-select capability via independent BHE and BLE controls.
It uses TTL-compatible I/Os with 2.4 V VOH (at VCC ≥ 3.0 V) and 0.4 V VOL, operates with single CE control and separate WE/OE/BHE/ BLE enables, and enters low-power data retention mode at 1.0 V VCC while maintaining stored contents - critical for automotive power-loss recovery scenarios.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 2 Mbit (128K words × 16-bit); supports full parallel word access or independent 8-bit byte writes via BHE/ BLE. |
| Access Time (tAA) | 10 ns (Automotive-E grade); enables real-time response in safety-critical ECUs with tight timing budgets. |
| ECC Function | Embedded single-bit error correction per read; no external logic required, reduces system-level fault detection latency. |
| Supply Voltage | 2.2 V to 3.6 V; compatible with modern automotive 3.3 V domains and brown-out tolerant down to 2.2 V. |
| Standby Current (ISB2) | 6 mA typical (Automotive-E); enables low-power sleep modes in always-on vehicle networks. |
| Operating Temperature | –40 °C to +125 °C (Automotive-E grade); qualified per AEC-Q100 Grade 1 for under-hood deployment. |
| Data Retention | 1.0 V minimum VCC; preserves memory contents during battery disconnect or deep sleep without backup power. |
Pinout & Package
This device is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with 0.5 mm pitch, optimized for thermal performance and board space efficiency in automotive modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding; A16 enables highest address bit for 2-Mbit capacity. |
| I/O0–I/O7 | Lower Byte Data I/O | Bi-directional 8-bit data path controlled by BLE; allows partial writes without disturbing upper byte. |
| I/O8–I/O15 | Upper Byte Data I/O | Bi-directional 8-bit data path controlled by BHE; enables independent access to high-order byte. |
| CE | Chip Enable | Active-low global enable; places all I/Os in high-impedance state when deasserted, reducing bus contention. |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CE and selected byte enable are also asserted. |
| OE | Output Enable | Active-low output control; enables read data only when CE is active, preventing spurious reads during chip deselect. |
| BLE / BHE | Byte Low / High Enable | Independent active-low controls for lower/upper byte; essential for mixed-endian or partial-data updates in microcontroller interfaces. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q100 Qualified (Grade 1) | Validated for automotive under-hood use up to +125 °C ambient, ensuring reliability in harsh thermal environments. |
| Embedded Single-Bit ECC | Hardware-accelerated error correction per read cycle; eliminates need for external ECC logic or software overhead. |
| Dual Byte-Enable Architecture | Independent BHE and BLE pins allow selective 8-bit writes without read-modify-write sequences, improving MCU efficiency. |
| Low Standby Current (6 mA typ) | Reduces quiescent power in always-on domains such as telematics gateways and body control modules. |
| 1.0-V Data Retention | Maintains valid memory contents during battery voltage sag or ignition-off states, enabling fast wake-up and state recovery. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Real-time storage of sensor fusion buffers, calibration tables, and fault logs in gasoline/diesel engine management systems. IC Role / Device Role / Timing Role: Primary working memory for 32-bit automotive MCUs with deterministic 10 ns access for closed-loop fuel injection timing. Use Value: ECC ensures integrity of torque maps and knock sensor history across 15+ year vehicle lifetimes despite radiation-induced soft errors. | Use Scenario: Temporary frame buffering and object tracking metadata storage in radar/vision processing domain controllers. IC Role / Device Role / Timing Role: High-speed scratchpad memory interfaced to ARM Cortex-R5F cores, supporting sub-microsecond latency for time-sensitive perception tasks. Use Value: Dual-byte enables allow efficient partial updates of bounding box coordinates without corrupting adjacent tracking IDs or timestamps. |
| Automotive Infotainment Head Unit | Electric Vehicle Battery Management System (BMS) |
Use Scenario: Storing UI state variables, audio codec parameters, and navigation route cache in head units with ISO 26262 ASIL-B compliance requirements. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical UI context during safe shutdown and cold boot sequences. Use Value: 1.0-V data retention preserves last-known screen state and Bluetooth pairing info even after full battery disconnect. | Use Scenario: Logging cell voltage, temperature, and SOC history in distributed BMS slave nodes operating near high-current traction inverters. IC Role / Device Role / Timing Role: Fault-tolerant buffer between isolated analog front-end and CAN FD communication interface. Use Value: AEC-Q100 qualification and ECC protect against EMI-induced bit flips in high-noise 400–800 V EV powertrain environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No embedded ECC; requires external error handling; 10 ns access, 3.3 V only; -40°C to +85°C (Industrial, not AEC-Q100). | Lacks automotive qualification and hardware ECC; suitable only for non-safety-critical infotainment subsystems. | Select only if ECC is implemented in firmware and temperature range is limited to cabin environments. |
| MT45W8MW16BGX-107 IT:B | LPDDR2 SDRAM, not SRAM; requires refresh; 107 MHz clock; no ECC; -40°C to +85°C; different interface protocol. | Not pin- or function-compatible; demands memory controller support for DRAM timing and refresh cycles. | Not a drop-in replacement; consider only for new designs where bandwidth > latency is prioritized and ECC is handled externally. |
Compared with IS61WV102416BLL-10MLI and MT45W8MW16BGX-107 IT:B, the CY7C1011G30-10BAJXET uniquely combines AEC-Q100 Grade 1 qualification, embedded hardware ECC, and true SRAM zero-refresh operation - making it the only viable choice for ASIL-B/C memory buffers in powertrain and ADAS domains.
Availability
CY7C1011G30-10BAJXET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and automotive infotainment head units requiring stable component supply across extended product lifecycles.
Supply support for CY7C1011G30-10BAJXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and security solutions with strong vertical integration and automotive qualification expertise.
This part belongs to Infineon's automotive SRAM portfolio, designed specifically for functional safety-critical memory applications in powertrain, chassis, and ADAS systems where data integrity, temperature resilience, and long-term supply stability are mandatory.
FAQ
Does CY7C1011G30-10BAJXET support automatic error correction on write operations?
No. The embedded ECC corrects single-bit errors only during read operations. It does not perform automatic write-back or scrubbing on detected errors. Error detection occurs on every read, and corrected data is presented to the bus, but the original memory location remains unmodified unless rewritten by the host system.
What is the maximum junction temperature this device can sustain during continuous operation?
The CY7C1011G30-10BAJXET has a maximum junction temperature of +150 °C, validated under AEC-Q100 stress testing. With its 30.68 °C/W θJA (VFBGA), sustained operation at +125 °C ambient requires ≤ 800 mW power dissipation - achievable given its 40 mA typical ICC and 6 mA ISB2 ratings at 3.6 V.
Can BHE and BLE be used simultaneously for full 16-bit writes?
Yes. Asserting both BHE and BLE LOW while CE and WE are active enables full 16-bit parallel writes to I/O0–I/O15. This is the standard mode for word-aligned memory updates and matches typical MCU bus configurations where the entire data bus drives the SRAM simultaneously.
Is the 48-ball VFBGA package lead-free and RoHS compliant?
Yes. The "JXET" suffix in CY7C1011G30-10BAJXET explicitly denotes a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish, qualified for reflow soldering per J-STD-020 moisture sensitivity level 3 (MSL-3) and JEDEC-standard lead-free process requirements.
CY7C1011G30-10BAJXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x8)
CY7C1011G30-10BAJXET FAQ
1.How can I place an order for CY7C1011G30-10BAJXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1011G30-10BAJXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1011G30-10BAJXET reliable?
The price and inventory of CY7C1011G30-10BAJXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1011G30-10BAJXET is usually 5 days.
3.What payment methods are accepted for CY7C1011G30-10BAJXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1011G30-10BAJXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1011G30-10BAJXET?
CY7C1011G30-10BAJXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1011G30-10BAJXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1011G30-10BAJXET?
For technical support, including CY7C1011G30-10BAJXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1011G30-10BAJXET requirements.
6.How does Aetrix verify that CY7C1011G30-10BAJXET is sourced from the original manufacturer or authorized distributors?
All CY7C1011G30-10BAJXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1011G30-10BAJXET meets industry standards.
7.What is the process for return or replacement of CY7C1011G30-10BAJXET?
All CY7C1011G30-10BAJXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1011G30-10BAJXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1011G30-10BAJXET part is unused and in its original packaging.
Return procedure for CY7C1011G30-10BAJXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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