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Infineon Technologies CY7C1011G30-12ZSXE
- Part No.:
- CY7C1011G30-12ZSXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1011G30-12ZSXE.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:658
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Product details
Overview
CY7C1011G30-12ZSXE from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 2-Mbit static RAM with embedded single-bit error-correcting code (ECC), 128K × 16-bit organization, 12 ns access time, and operation over –40 °C to +125 °C. It supports byte-level writes via BHE/ BLE and delivers 6 mA typical standby current at 3.6 V in Automotive-E grade for engine control units and ADAS domain controllers.
For engineers reviewing the CY7C1011G30-12ZSXE datasheet, CY7C1011G30-12ZSXE pinout, CY7C1011G30-12ZSXE application, or CY7C1011G30-12ZSXE equivalent, key selection criteria include ECC-enabled data integrity in safety-critical memory buffers, dual-byte enable architecture for partial-word updates, and compatibility with 2.2–3.6 V supply rails in high-temperature automotive environments.
Technical Context
The CY7C1011G30-12ZSXE implements a synchronous CMOS SRAM core with dedicated on-die ECC encoder/decoder logic that detects and corrects single-bit errors per 16-bit word without external circuitry. Its address decoding uses hierarchical row/column architecture with 17 address lines (A0–A16) supporting full 128K-word addressing.
Control logic integrates TTL-compatible CE, WE, OE, BHE, and BLE inputs with defined timing relationships: tAA = 12 ns max, tHZOE = 6 ns max, and tPD = 12 ns for CE-driven power-down. All I/Os enter high-impedance state when CE is HIGH or during deselection, ensuring bus isolation in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 2 Mbit (128K words × 16-bit); enables storage of 256 KB of application code or sensor data buffers in compact footprint. |
| Access Time (tAA) | 12 ns maximum at VCC = 2.2–3.6 V; supports 83 MHz burst read/write cycles in real-time control loops. |
| ECC Capability | Single-bit error correction per 16-bit word; reduces uncorrectable failure-in-time (FIT) rate to < 0.1 FIT/Mb for ASIL-B compliance. |
| Supply Voltage | 2.2 V to 3.6 V; compatible with modern automotive 3.3 V domains and brown-out tolerant down to 2.2 V. |
| Standby Current (ISB2) | 6 mA typical at VCC = 3.6 V, –40 °C to +125 °C; minimizes quiescent power in always-on ECU modules. |
| Operating Temperature | –40 °C to +125 °C (Automotive-E grade); validated for under-hood deployment in powertrain and chassis systems. |
| Data Retention | 1.0 V minimum VCC; maintains memory contents during deep sleep or battery backup modes without refresh. |
Pinout & Package
Package: 44-pin TSOP II (ZSXE suffix). Pinout conforms to JEDEC MO-141AC standard with 17 address inputs (A0–A16), 16 bidirectional data I/Os (I/O0–I/O15), and five control signals (CE, WE, OE, BHE, BLE).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus selecting one of 128K memory locations; latched on CE/WE transitions. |
| I/O0–I/O7 | Data Bus (Lower Byte) | Bi-directional 8-bit data path enabled by BLE; supports independent lower-byte write/read operations. |
| I/O8–I/O15 | Data Bus (Upper Byte) | Bi-directional 8-bit data path enabled by BHE; allows concurrent upper/lower byte access for 16-bit alignment. |
| CE | Chip Enable | Active-low global enable; places device in standby (ISB2) when HIGH, enabling low-power memory partitioning. |
| WE | Write Enable | Active-low signal initiating write cycle; overlaps with CE and BHE/ BLE to define write window boundaries. |
| OE | Output Enable | Active-low control for output drivers; disables I/Os to high-impedance when deasserted, preventing bus contention. |
| BLE | Byte Low Enable | Enables I/O0–I/O7 during write/read; permits 8-bit microcontroller interface without data masking logic. |
| BHE | Byte High Enable | Enables I/O8–I/O15 during write/read; supports mixed 8/16-bit peripheral interfacing in heterogeneous SoC designs. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Engine | On-die hardware correction of single-bit errors per 16-bit word without CPU intervention or software overhead. |
| Dual-Byte Write Control | Independent BHE/ BLE pins allow simultaneous or selective update of upper/lower bytes-critical for legacy 8-bit bus compatibility. |
| Low-Power Standby Mode | ISB2 = 6 mA typical at 3.6 V and +125 °C ensures minimal leakage in always-on vehicle networks like CAN FD gateways. |
| Automotive Temperature Range | Validated operation from –40 °C to +125 °C meets AEC-Q100 Grade 1 requirements for engine bay and transmission control units. |
| TTL-Compatible I/O | VIL = 0.8 V max and VOH = 2.4 V min at 3.6 V ensure robust noise margin against EMI in electrically noisy automotive harnesses. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Real-time storage of fuel injection timing maps and knock sensor calibration tables requiring persistent, error-resilient memory. IC Role / Device Role / Timing Role: Primary non-refreshed SRAM buffer holding safety-critical lookup tables accessed at 12 ns latency during combustion cycle execution. Use Value: Embedded ECC prevents silent data corruption in long-term calibration storage, eliminating need for external checksum validation in ASIL-B software stacks. |
Use Scenario: Frame buffering for radar pre-processing pipelines where sensor data must be retained across power cycling events. IC Role / Device Role / Timing Role: Dual-port accessible memory bank supporting parallel read (DSP) and write (ADC interface) with byte-select granularity. Use Value: 12 ns tAA and BHE/ BLE enable synchronized 16-bit transfers between radar SoC and DSP, reducing pipeline stalls in 77 GHz radar front-ends. |
| Electric Power Steering (EPS) | Body Control Module (BCM) |
|
Use Scenario: Storing torque assist profiles and motor position history logs subject to vibration-induced bit flips in steering column assemblies. IC Role / Device Role / Timing Role: Fault-tolerant memory node interfaced directly to MCU's external bus with automatic CE power-down during idle phases. Use Value: ISB2 = 6 mA standby current extends battery life during vehicle sleep mode while ECC guarantees integrity of stored fault records. |
Use Scenario: Holding configuration parameters for door lock actuators, lighting sequences, and HVAC settings across ignition cycles. IC Role / Device Role / Timing Role: Non-volatile shadow RAM backed by 1.0 V data retention voltage, retaining settings during 12 V battery disconnect. Use Value: 1.0 V VDR allows retention using supercapacitor backup instead of EEPROM, reducing bill-of-materials cost and write-cycle wear. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV12816BLL-12MLI | No embedded ECC; requires external error detection logic; 12 ns tAA, same 128K × 16-bit organization. | Lacks built-in single-bit correction; increases software validation burden for ISO 26262 ASIL-B systems. | Select only if ECC is implemented externally and cost sensitivity outweighs functional safety certification effort. |
| MT28EW256-AATD1W10-0SIT | Quad SPI NOR Flash with ECC; 256 Mb density; serial interface; no parallel bus support. | Asynchronous serial access vs. parallel SRAM timing; unsuitable for low-latency MCU external memory bus use. | Use only for firmware storage-not for real-time data buffering-where latency >100 ns is acceptable. |
Compared with IS61WV12816BLL-12MLI and MT28EW256-AATD1W10-0SIT, CY7C1011G30-12ZSXE uniquely delivers parallel-interface SRAM performance with integrated ECC, eliminating external error-handling logic while maintaining deterministic 12 ns access for safety-critical automotive control loops.
Availability
CY7C1011G30-12ZSXE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric power steering modules requiring stable component supply across extended automotive temperature ranges and long product lifecycles.
Supply support for CY7C1011G30-12ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader focused on power systems, automotive electronics, and security solutions, with headquarters in Munich, Germany.
CY7C1011G30-12ZSXE belongs to Infineon's automotive-qualified SRAM portfolio, designed specifically for safety-critical memory applications in powertrain, chassis, and driver assistance systems where ECC resilience and extended temperature operation are mandatory.
FAQ
Does CY7C1011G30-12ZSXE support automatic error correction without CPU intervention?
Yes. The device contains dedicated on-die ECC encoder/decoder logic that automatically detects and corrects single-bit errors per 16-bit word during read operations. No firmware or external logic is required-the correction occurs transparently within the memory access cycle, with no latency penalty or system intervention needed.
What is the significance of the "ZSXE" suffix in the part number?
The "ZSXE" suffix denotes a 44-pin TSOP II package (Z), lead-free finish (S), extended temperature range (X), and automotive qualification (E). It confirms compliance with AEC-Q100 Grade 1 (–40 °C to +125 °C) and RoHS Directive 2011/65/EU, with no halogenated flame retardants in the molding compound.
Can CY7C1011G30-12ZSXE operate reliably at 2.2 V supply voltage?
Yes. The device is fully specified for operation across 2.2 V to 3.6 V, including all AC timing parameters (tAA = 12 ns max), DC characteristics (VIH/VIL thresholds), and ECC functionality. At 2.2 V, ICC active current drops to 32 mA typical, and ISB2 remains at 6 mA typical-enabling robust low-voltage operation during cold-crank conditions.
How does the BHE/ BLE interface simplify connection to 8-bit microcontrollers?
BHE and BLE allow independent control of upper and lower data bytes. When interfacing with an 8-bit MCU, BLE can be tied LOW to enable I/O0–I/O7 while BHE remains HIGH, isolating I/O8–I/O15. This eliminates external data bus multiplexing or gating logic, reducing PCB complexity and signal integrity risk in space-constrained automotive modules.
CY7C1011G30-12ZSXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1011G30-12ZSXE FAQ
1.How can I place an order for CY7C1011G30-12ZSXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1011G30-12ZSXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1011G30-12ZSXE reliable?
The price and inventory of CY7C1011G30-12ZSXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1011G30-12ZSXE is usually 5 days.
3.What payment methods are accepted for CY7C1011G30-12ZSXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1011G30-12ZSXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1011G30-12ZSXE?
CY7C1011G30-12ZSXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1011G30-12ZSXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1011G30-12ZSXE?
For technical support, including CY7C1011G30-12ZSXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1011G30-12ZSXE requirements.
6.How does Aetrix verify that CY7C1011G30-12ZSXE is sourced from the original manufacturer or authorized distributors?
All CY7C1011G30-12ZSXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1011G30-12ZSXE meets industry standards.
7.What is the process for return or replacement of CY7C1011G30-12ZSXE?
All CY7C1011G30-12ZSXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1011G30-12ZSXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1011G30-12ZSXE part is unused and in its original packaging.
Return procedure for CY7C1011G30-12ZSXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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