Infineon Technologies CY7C1018DV33-10VXIT

Overview

CY7C1018DV33-10VXIT from Cypress Semiconductor is a 1-Mbit (128 K × 8) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and automatic CE-controlled power-down. It features center power/ground pinout, three-state I/O drivers, and supports memory expansion via independent CE, OE, and WE controls. Used in industrial embedded controllers requiring deterministic low-latency data storage.

For engineers reviewing the CY7C1018DV33-10VXIT datasheet, CY7C1018DV33-10VXIT pinout, CY7C1018DV33-10VXIT application, or CY7C1018DV33-10VXIT equivalent, key selection criteria include tAA ≤ 10 ns, ISB2 ≤ 3 mA standby current, 2.0 V data retention capability, and Pb-free 48-ball VFBGA package compatibility with industrial temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements a synchronous read/write interface with dual active-Low control signals (CE and OE for reads; CE and WE for writes), enabling precise bus timing control in microcontroller co-processor systems. Its architecture includes separate row/column decoders, sense amplifiers, and input buffers with automatic power-down activation when CE is HIGH.

The device operates exclusively at 3.3 V ±0.3 V and guarantees full functionality across –40 °C to +85 °C. Data retention is maintained down to 2.0 V with ICCDR ≤ 3 mA, and all AC timing parameters-including tRC = 10 ns, tDOE = 5 ns, and tHZOE = 5 ns-are specified under defined load conditions (5 pF for high-Z transitions, 30 pF for data valid).

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.8 mm pitch, Pb-free, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV102416L-10TLI and AS6C1008-10TIN, CY7C1018DV33-10VXIT uniquely combines VFBGA packaging, industrial temperature rating, and guaranteed 2.0 V data retention-making it optimal for compact, mission-critical embedded systems where footprint, thermal performance, and brown-out resilience are non-negotiable.

Availability

CY7C1018DV33-10VXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and avionics display controllers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1018DV33-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC mixed-signal arrays, and USB/USB-C solutions.

The CY7C1018DV33 belongs to Cypress's industrial-grade parallel SRAM product line, engineered for deterministic timing, low-power standby operation, and robustness in mission-critical embedded systems.

FAQ

What is the maximum clock frequency supported for burst read operations?

The CY7C1018DV33-10VXIT does not use a clock signal-it is an asynchronous SRAM. Its maximum operational speed is defined by tRC = 10 ns, enabling up to 100 MHz sustained random-access cycles when driven by properly timed CE/OE/WE strobes. No internal PLL or clock multiplier is present.

Can this SRAM be used with a 5 V microcontroller interface?

No. The CY7C1018DV33-10VXIT is strictly a 3.3 V device: VIH(max) = VCC + 0.3 V = 3.6 V, and absolute maximum input voltage is VCC + 0.3 V. Direct connection to 5 V logic will damage the inputs. Level-shifting circuitry is required for interoperability with 5 V systems.

Does the VFBGA package require special PCB layout considerations?

Yes. The 48-ball VFBGA demands controlled impedance routing, dedicated ground/power planes, and thermal vias under the package per Cypress AN98512. Solder mask-defined pads and stencil thickness ≤ 0.12 mm are recommended to prevent bridging and voiding during reflow.

How does automatic power-down behave during partial address transitions?

Automatic power-down activates only when CE is HIGH-regardless of address or data bus state. Partial address changes with CE LOW maintain full active current (ICC = 60 mA). CE must remain HIGH for >10 ns to guarantee ISB2 ≤ 3 mA; no address stability requirement applies.