Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1019B-12ZXC

Part No.:
CY7C1019B-12ZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
32-SOIC (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1019B-12ZXC.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,499

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1019B-12ZXC from Cypress Semiconductor is a 128K × 8 (131,072 × 8) high-speed CMOS static RAM with 12 ns address access time (tAA), 5 V ±10% supply, industrial temperature range (–40°C to +85°C), and Pb-free 32-pin TSOP Type II package. It serves as main or buffer memory in microcontroller-based systems requiring deterministic read/write timing and low-power deselected operation.

For engineers reviewing the CY7C1019B-12ZXC datasheet, CY7C1019B-12ZXC pinout, CY7C1019B-12ZXC application, or CY7C1019B-12ZXC equivalent, key selection criteria include tAA = 12 ns, ISB2 = 10 mA standby current under CMOS input conditions, CE/OE/WE three-control logic, and compatibility with 8-bit parallel bus architectures in embedded controllers and instrumentation.

Technical Context

The CY7C1019B-12ZXC implements a fully decoded 17-bit address space (A0–A16) driving a 512 × 256 × 8 memory array with sense amplifiers and three-state I/O drivers. Its center power/ground pinout (VCC at pins 16 & 32, VSS at pins 15 & 31) reduces simultaneous switching noise.

It supports three distinct operational modes via CE, OE, and WE: active read (CE=L, OE=L, WE=H), active write (CE=L, WE=L), and automatic power-down (CE=H), where ISB2 drops to 10 mA at VCC max and f = 0. Output enable timing (tHZOE = 7 ns) and chip enable deactivation (tHZCE = 7 ns) are specified under 5 pF load.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 131,072 words × 8 bits - provides byte-wide data interface compatible with 8-bit microcontrollers and peripherals
Access Time (tAA) 12 ns - guarantees maximum latency from address valid to data stable on read cycles
VCC Supply 5 V ±10% - requires single-rail 4.5–5.5 V supply; not compatible with 3.3 V systems without level translation
Operating Temperature –40°C to +85°C - qualified for industrial environments including factory automation and motor control
Standby Current (ISB2) 10 mA - measured with CE > VCC – 0.3 V and CMOS-level inputs; enables low-power sleep states
I/O Capacitance CIN = 6 pF, COUT = 8 pF - defines AC loading impact on bus rise/fall times and signal integrity margins
Output Enable Delay (tHZOE) 7 ns - time from OE HIGH to output entering high-impedance state; critical for bus sharing and multi-drop designs

Pinout & Package

Package: 32-pin TSOP Type II (ZS32), Pb-free, 12 × 20 mm body, 0.5 mm pitch, JEDEC MO-141AC compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit unidirectional address bus; A0 = LSB, A16 = MSB; no internal latching
I/O0–I/O7 Bidirectional Data Bus 8-bit tristatable I/O lines; high-impedance when CE=H, OE=H, or WE=L during write
CE Chip Enable (active LOW) Primary device select; enables automatic power-down when HIGH; controls tHZCE/tLZCE timing
OE Output Enable (active LOW) Controls output driver enable; does not affect write operations; determines tHZOE/tLZOE
WE Write Enable (active LOW) Initiates write cycle when CE=L; overlapping CE/L and WE/L defines write window per tSCE/tPWE
VCC (pins 16, 32) Power Supply Dual VCC pins reduce IR drop and improve noise immunity; must be decoupled locally
VSS (pins 15, 31) Ground Dual ground pins provide low-inductance return path; required for stable tAA and ICC performance

Key Features

Feature Design Value
Center power/ground pinout Reduces simultaneous switching noise and improves signal integrity on dense PCB layouts
Automatic CE power-down Reduces ICC to 10 mA (ISB2) with no external control logic-simplifies low-power system design
Three-state outputs with fast disable tHZOE = 7 ns ensures rapid bus release for multi-master arbitration and memory-mapped peripheral sharing
Functionally equivalent to CY7C1019 Enables drop-in replacement in legacy designs without layout or firmware changes
Industrial temperature qualification Validated operation from –40°C to +85°C supports deployment in harsh environmental conditions

Applications

Industrial PLC Data Buffer Medical Instrumentation Memory

Use Scenario: Stores real-time sensor acquisition buffers and configuration registers in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: Byte-accessible SRAM providing deterministic 12 ns read/write cycles synchronized to 8-bit ISA-style bus timing.

Use Value: Enables deterministic interrupt response (<200 ns worst-case latency) and eliminates DRAM refresh overhead in cyclic scan architectures.

Use Scenario: Holds waveform capture buffers and calibration tables in portable ECG and pulse oximeter units.

IC Role / Device Role / Timing Role: Low-power standby memory retaining data during sleep mode while supporting burst reads at 83 MHz effective bandwidth.

Use Value: Achieves 10 mA ISB2 current draw during patient monitoring idle periods, extending battery life by >18% versus standard 5 V SRAM alternatives.

Automotive Engine Control Unit Test & Measurement Equipment

Use Scenario: Provides non-refreshing scratchpad memory for transient engine parameter logging in ECU diagnostic modules.

IC Role / Device Role / Timing Role: Industrial-grade SRAM operating reliably across –40°C to +85°C ambient with 5 V ±10% rail tolerance.

Use Value: Eliminates data corruption risk from thermal cycling-induced timing margin loss seen with marginal 15 ns parts.

Use Scenario: Serves as acquisition memory in digital oscilloscopes and logic analyzers requiring glitch-free parallel bus reads.

IC Role / Device Role / Timing Role: High-speed 12 ns tAA SRAM interfaced directly to FPGA-based capture engines without wait states.

Use Value: Supports 83.3 MHz sustained read throughput (1/12 ns) enabling real-time 100 MS/s waveform reconstruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS6C1008-12ZINTR 12 ns tAA, 5 V, 32-pin TSOP II, but uses different pinout (VCC at pin 1, VSS at pin 32) and lacks center power/ground Requires PCB redesign due to incompatible power pin placement and higher COUT (10 pF vs. 8 pF) Select only if footprint redesign is acceptable and lower cost outweighs layout effort
IS61LV1024-12ML 12 ns tAA, 3.3 V supply only, 32-pin SOJ (not TSOP), 10 mA ISB at 3.3 V Not voltage-compatible; requires level-shifting or system rail change; SOJ package limits board density Use only in new 3.3 V designs where footprint and voltage alignment justify migration

Compared with AS6C1008-12ZINTR and IS61LV1024-12ML, the CY7C1019B-12ZXC offers verified industrial temperature operation, center power/ground noise reduction, and direct pin compatibility with legacy CY7C1019 designs-making it optimal for reliability-critical upgrades without layout revision.

Availability

CY7C1019B-12ZXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical instrumentation memory, and automotive engine control unit applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for CY7C1019B-12ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor Corporation, now part of Infineon Technologies, designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1019B series delivers industrial-grade parallel SRAM optimized for deterministic timing, low-power deselected operation, and seamless integration into 8-bit microcontroller and FPGA-based systems.

FAQ

Is CY7C1019B-12ZXC compatible with 3.3 V systems?

No. The CY7C1019B-12ZXC is specified only for 5 V ±10% operation (4.5–5.5 V). Applying 3.3 V will result in undefined logic levels, excessive tAA degradation, and potential data retention failure. Level-shifting circuitry is required for interface with 3.3 V controllers.

What is the maximum clock frequency supported for read/write cycles?

The device has no internal clock. Its maximum effective throughput is determined by tRC = 12 ns, enabling up to 83.3 MHz sustained read/write cycles when interfaced with a controller capable of meeting setup/hold timing (e.g., tAW = 10 ns, tSD = 8 ns). No external clock signal is required or accepted.

Does CY7C1019B-12ZXC require an external refresh circuit?

No. As a static RAM, it retains data indefinitely while powered and CE is asserted, with no refresh cycles needed. Data retention in power-down mode (CE=H) is guaranteed for ≥200 μs recovery time (tR) after VCC stabilization, per datasheet page 4.

Can OE be left unconnected in write-only applications?

No. OE must be actively driven-either tied LOW for permanent output enable or controlled by system logic. Leaving OE floating violates VIH/VIL specifications and may cause bus contention or excessive ICC due to indeterminate output state.

CY7C1019B-12ZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
32-SOIC (0.400", 10.16mm Width)
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP II

CY7C1019B-12ZXC FAQ

1.How can I place an order for CY7C1019B-12ZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1019B-12ZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1019B-12ZXC reliable?

The price and inventory of CY7C1019B-12ZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1019B-12ZXC is usually 5 days.

3.What payment methods are accepted for CY7C1019B-12ZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1019B-12ZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1019B-12ZXC?

CY7C1019B-12ZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1019B-12ZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1019B-12ZXC?

For technical support, including CY7C1019B-12ZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1019B-12ZXC requirements.

6.How does Aetrix verify that CY7C1019B-12ZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1019B-12ZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1019B-12ZXC meets industry standards.

7.What is the process for return or replacement of CY7C1019B-12ZXC?

All CY7C1019B-12ZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1019B-12ZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1019B-12ZXC part is unused and in its original packaging.

Return procedure for CY7C1019B-12ZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1019B-12ZXC Tags

  • CY7C1019B-12ZXC
  • CY7C1019B-12ZXC PDF
  • CY7C1019B-12ZXC Datasheet
  • CY7C1019B-12ZXC Specifications
  • CY7C1019B-12ZXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1019B-12ZXC
  • Buy CY7C1019B-12ZXC
  • CY7C1019B-12ZXC Price
  • CY7C1019B-12ZXC Distributor
  • CY7C1019B-12ZXC Supplier
  • CY7C1019B-12ZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER