Infineon Technologies CY7C1019D-10ZSXIT

Overview

CY7C1019D-10ZSXIT from Infineon Technologies (formerly Cypress) is a 1-Mbit (128 K × 8) high-speed CMOS static RAM with 10 ns access time, 5 V supply operation, and automatic CE-controlled power-down. It features TTL-compatible I/O levels, center power/ground pinout, and supports memory expansion via independent CE, OE, and WE controls. Used in industrial embedded controllers requiring deterministic low-latency data storage.

For engineers reviewing the CY7C1019D-10ZSXIT datasheet, CY7C1019D-10ZSXIT pinout, CY7C1019D-10ZSXIT application, or CY7C1019D-10ZSXIT equivalent, key selection criteria include tAA ≤ 10 ns read timing, ISB2 ≤ 3 mA standby current, VCC = 5 V ± 0.5 V tolerance, and compatibility with legacy 5 V microcontrollers using TTL-level address/data buses.

Technical Context

The device implements a full CMOS SRAM core with tri-state bidirectional I/O drivers and asynchronous control logic. Address decoding uses a 17-bit input (A0–A16) to select one of 131,072 × 8-bit locations, with CE acting as primary chip-select enabling automatic power-down when deasserted.

Read and write operations are fully separated by dedicated OE and WE inputs, supporting non-overlapping bus protocols. Output enable timing (tDOE = 5 ns max) and write pulse width (tPWE = 7 ns min) ensure reliable interfacing with 100 MHz system clocks and legacy 8051/Z80-style processors.

Key Specifications

Pinout & Package

Package: 32-pin TSOP II (1.27 mm pitch), 10.16 mm × 20.95 mm body, JEDEC MO-141AC compliant. Pin 1 index corner marked with notch or dot; pins arranged in two rows, center-aligned VCC (pins 16, 17) and VSS (pins 30, 32).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with AS6C1008-10TIN and IS61LV102410AL-10TLI, CY7C1019D-10ZSXIT uniquely supports direct TTL interfacing and autonomous power-down-critical for drop-in upgrades and brown-out resilience in industrial 5 V systems.

Availability

CY7C1019D-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, legacy microcontroller memory expansion, and automotive body control modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1019D-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions acquired through the Cypress Semiconductor merger.

CY7C1019D belongs to Infineon's legacy parallel SRAM product line, designed specifically for backward-compatible memory upgrades in industrial and automotive systems relying on 5 V TTL signaling and deterministic access timing.

FAQ

Is CY7C1019D-10ZSXIT compatible with 3.3 V microcontrollers?

No. This device requires 5 V ± 0.5 V supply and has TTL-compatible input thresholds (VIH = 2.2 V min), making it incompatible with native 3.3 V logic without level translation. Its I/O structure is optimized for 5 V systems such as legacy 8051 or 68K-based controllers.

Does CY7C1019D-10ZSXIT support byte-wide writes?

No. The device lacks individual byte-write enable pins and performs full 8-bit writes only. Data on IO0–IO7 is latched entirely during each write cycle when CE and WE are both LOW, regardless of data bus content on other bits.

What is the maximum operating frequency supported by CY7C1019D-10ZSXIT?

The device supports up to 100 MHz read/write burst operation, derived from its 10 ns tRC and tWC specifications. Sustained operation at this rate requires strict adherence to AC timing parameters including tSD = 6 ns setup and tHD = 0 ns hold for data relative to WE transitions.

Can CY7C1019D-10ZSXIT retain data during complete power removal?

No. Data retention requires minimum VCC ≥ 2.0 V (VDR). Below this threshold, memory contents are not guaranteed. For true nonvolatile storage, an external backup power source or battery-backed SRAM controller is required.