Infineon Technologies CY7C1019DV33-10BVXI

Overview

CY7C1019DV33-10BVXI from Cypress Semiconductor is a 1-Mbit (128 K × 8) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and automatic CE-controlled power-down. It features center power/ground pinout, three-state I/O drivers, and supports memory expansion via active-low CE/OE/WE controls. Used in industrial embedded controllers requiring deterministic low-latency data storage.

For engineers reviewing the CY7C1019DV33-10BVXI datasheet, CY7C1019DV33-10BVXI pinout, CY7C1019DV33-10BVXI application, or CY7C1019DV33-10BVXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 3 mA standby current, VCC = 3.3 V ±0.3 V operation, 2.0 V data retention, and Pb-free 48-ball VFBGA packaging.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array organized as 131,072 × 8 bits with full address decoding (A0–A16), bidirectional I/O0–I/O7, and TTL/CMOS-compatible control logic. Its automatic power-down activates when CE is HIGH, reducing ICC to 3 mA (ISB2) without external sequencing.

Read operations require CE and OE LOW with WE HIGH; writes require CE and WE LOW. Output enable and chip enable both support three-state output control with tHZOE ≤ 5 ns and tHZCE ≤ 5 ns, enabling clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.8 mm pitch, Pb-free, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with AS6C1008-10TIN and IS61LV10248-10TL, CY7C1019DV33-10BVXI uniquely combines VFBGA packaging, 2.0 V data retention, and industrial temperature rating-making it optimal for new designs requiring compact size, power-fail resilience, and extended environmental operation.

Availability

CY7C1019DV33-10BVXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame stores, avionics sensor hubs, and test equipment pattern memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1019DV33-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and aerospace applications, with headquarters in San Jose, CA.

CY7C1019DV33 belongs to Cypress's legacy high-speed parallel SRAM product line, engineered specifically for deterministic low-latency data buffering in real-time embedded systems where timing predictability and power-state control are critical.

FAQ

Is CY7C1019DV33-10BVXI pin-compatible with CY7C1018DV33-10BVXI?

Yes. Both devices share identical 48-ball VFBGA pinout, electrical characteristics, and functional behavior. The CY7C1019DV33 is functionally identical to CY7C1018DV33 except for minor internal mask revisions; they are interchangeable in all designs using this package and speed grade.

What is the maximum operating frequency supported by CY7C1019DV33-10BVXI?

The device supports up to 100 MHz read/write cycling, derived from its 10 ns tRC and tWC specifications. At 100 MHz, it delivers sustained 800 MB/s bandwidth on an 8-bit bus, assuming zero wait states and ideal signal integrity conditions.

Does CY7C1019DV33-10BVXI require external pull-up resistors on control pins?

No. All control inputs (CE, OE, WE, A0–A16, I/O0–I/O7) are CMOS-compatible with rail-to-rail voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V). Pull-ups are unnecessary unless required by system-level bus contention or open-drain interface logic.

Can CY7C1019DV33-10BVXI operate at 2.5 V supply?

No. The device is specified only for 3.3 V ±0.3 V operation (3.0 V to 3.6 V). Operation below 3.0 V violates the Absolute Maximum Ratings and may cause data corruption, timing violations, or failure to enter data retention mode at 2.0 V.