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Infineon Technologies CY7C1019DV33-10BVXIT
- Part No.:
- CY7C1019DV33-10BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1019DV33-10BVXIT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,473
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Product details
Overview
CY7C1019DV33-10BVXIT from Cypress Semiconductor is a 1-Mbit (128 K × 8) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and automatic CE-controlled power-down. It features center power/ground pinout, three-state I/O drivers, and supports memory expansion via active-low CE and OE. Used in industrial embedded controllers requiring fast, low-power volatile storage with data retention down to 2.0 V.
For engineers reviewing the CY7C1019DV33-10BVXIT datasheet, CY7C1019DV33-10BVXIT pinout, CY7C1019DV33-10BVXIT application, or CY7C1019DV33-10BVXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 3 mA standby current, VCC = 3.3 V ± 0.3 V operation, 48-ball VFBGA package compatibility, and industrial temperature range (–40 °C to +85 °C).
Technical Context
This SRAM implements a synchronous, address-decoded 128 K × 8 array with dual decode architecture (row/column), integrated sense amplifiers, and input/output buffers with controlled slew rate. Its automatic power-down activates when CE is HIGH, reducing ICC to 3 mA (ISB2) while retaining data at VCC ≥ 2.0 V.
The device supports three distinct read modes (address-, CE-, and OE-controlled) and two write modes (CE/WE- and WE-only), with guaranteed timing margins for tACE ≤ 10 ns, tDOE ≤ 5 ns, and tHZOE ≤ 5 ns. All I/O pins (I/O0–I/O7) enter high-impedance state during deselection, output disable, or write cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 131,072 × 8 bits - provides byte-wide data interface compatible with 8-bit microcontrollers and legacy bus architectures. |
| Access Time (tAA) | 10 ns - enables direct interfacing with 100 MHz system clocks without wait states in FPGA or ASIC glue logic. |
| VCC Supply | 3.3 V ± 0.3 V - matches standard LVTTL and LVCMOS I/O voltage domains; no level-shifting required. |
| Standby Current (ISB2) | 3 mA - allows battery-backed operation in low-power industrial monitoring nodes with extended sleep intervals. |
| Data Retention Voltage | 2.0 V - ensures reliable memory hold during brown-out conditions or controlled power sequencing. |
| Operating Temperature | –40 °C to +85 °C - certified for use in industrial control panels, motor drives, and outdoor communications equipment. |
| Package Type | 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts with thermal performance θJA = 36 °C/W. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm body, 0.8 mm ball pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128 K-word decoding; A16 enables highest address bit for 131,072-word space. |
| I/O0–I/O7 | Bi-directional Data I/O | 8-bit shared data bus with three-state control; high-impedance during CE HIGH, OE HIGH, or WE LOW. |
| CE | Chip Enable (active LOW) | Primary device select; triggers automatic power-down when HIGH, reducing ICC to 3 mA (ISB2). |
| OE | Output Enable (active LOW) | Controls output buffer enable; used with CE to define read cycle timing (tDOE ≤ 5 ns). |
| WE | Write Enable (active LOW) | Initiates write operation when CE is LOW; overlap of CE/WE LOW defines internal write window. |
| VCC | Power Supply | 3.3 V core and I/O supply; two dedicated VCC balls (pins B1, G7) support low-noise decoupling. |
| VSS | Ground | Two ground balls (pins D1, F7) provide low-inductance return path for switching currents. |
| NC | No Connect | 12 unconnected balls (e.g., A2, A3, C1, C2, etc.) - must be left floating or grounded per layout guidelines; not bonded internally. |
Key Features
| Feature | Design Value |
|---|---|
| Pin- and function-compatible with CY7C1018CV33/CY7C1019CV33 | Enables drop-in replacement in existing designs using older -CV33 variants without layout or firmware changes. |
| Center power/ground pinout | Reduces simultaneous switching noise (SSN) and improves signal integrity on dense PCBs by symmetrically distributing VCC/VSS. |
| Automatic CE power-down | Eliminates need for external power management circuitry; transitions to 3 mA standby within 10 ns (tPD) of CE deassertion. |
| Low active power (ICC = 60 mA @ 10 ns) | Supports sustained burst reads in real-time data acquisition systems without exceeding thermal limits in VFBGA package. |
| 2.0 V data retention | Permits graceful shutdown during power loss events while preserving configuration or logging data in industrial edge devices. |
Applications
| Industrial PLC I/O Modules | Medical Diagnostic Imaging Buffers |
|---|---|
|
Use Scenario: Real-time buffering of analog-to-digital conversion streams from multi-channel sensor arrays in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Volatile frame buffer providing 128 KB of deterministic-latency storage for ADC sample aggregation prior to CAN or Ethernet transmission. Use Value: 10 ns tAA ensures zero-wait-state capture at 100 kSPS across 16 channels; ISB2 = 3 mA extends battery life during maintenance mode. |
Use Scenario: Temporary storage of pre-processed ultrasound echo data between beamforming and image reconstruction stages. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory enabling pipelined processing with minimal inter-stage latency. Use Value: Center VCC/VSS pinout suppresses noise coupling into sensitive analog front-end; 48-ball VFBGA fits compact FPGA carrier boards. |
| Automotive ADAS Camera Preprocessing | Test & Measurement Equipment FIFO |
|
Use Scenario: Frame buffering for 1 MP monochrome camera inputs in lane-departure warning ECUs operating under ASIL-B constraints. IC Role / Device Role / Timing Role: Deterministic-access memory for pixel line buffering and histogram generation before DSP execution. Use Value: –40 °C to +85 °C rating meets automotive ambient requirements; 2.0 V data retention preserves last valid frame during cold crank. |
Use Scenario: Acquisition buffer in portable oscilloscopes capturing high-speed digital signals at 1 GS/s with deep memory depth. IC Role / Device Role / Timing Role: High-speed parallel memory serving as first-level capture buffer before DDR compression and transfer. Use Value: tHZOE ≤ 5 ns guarantees clean output disable for glitch-free multiplexing between multiple channel buffers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV10248AL-10MLI | Same 128 K × 8 organization, 10 ns speed, but uses 32-pin SOJ; higher ISB2 = 5 mA; no VFBGA option. | Limited to through-hole or SOJ-based legacy test fixtures; unsuitable for new high-density SMT designs. | Select when replacing aging SOJ-based boards where footprint compatibility is mandatory. |
| ON Semiconductor MC14LC5481DW | 5 V-tolerant I/O, 12 ns access time, 3.3 V core; requires level translation for pure 3.3 V systems; ISB2 = 4 mA. | Used in mixed-voltage systems with 5 V peripherals; slower timing restricts use in 100 MHz bus interfaces. | Choose only when interfacing with 5 V TTL logic without external translators; avoid for timing-critical 3.3 V-native designs. |
Compared with IS61LV10248AL-10MLI and MC14LC5481DW, CY7C1019DV33-10BVXIT offers superior thermal performance (θJA = 36 °C/W), native VFBGA packaging for miniaturization, and lowest standby current (3 mA) among industrial-grade 1-Mbit SRAMs - critical for thermally constrained portable instrumentation.
Availability
CY7C1019DV33-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC I/O modules, medical diagnostic imaging buffers, and automotive ADAS camera preprocessing requiring stable component supply across extended product lifecycles.
Supply support for CY7C1019DV33-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with headquarters in San Jose, CA.
CY7C1019DV33 belongs to Cypress's legacy high-speed asynchronous SRAM product line, engineered specifically for deterministic-latency, low-power volatile storage in real-time embedded systems where predictability outweighs density.
FAQ
Is CY7C1019DV33-10BVXIT pin-compatible with CY7C1019CV33?
Yes - it is explicitly pin- and function-compatible per the datasheet Rev. *J. Both share identical 48-ball VFBGA pinout, address/data mapping, and control signal behavior. No PCB redesign or firmware modification is needed for migration from CV33 to DV33 revision.
What is the maximum clock frequency supported for burst read operations?
The device does not use a clock; it is asynchronous. Maximum effective throughput is determined by tRC = 10 ns, yielding up to 100 million random accesses per second. For sequential reads, address transition timing (tOHA = 3 ns) enables sustained bandwidth approaching 800 MB/s on an 8-bit bus.
Can CE and OE be tied together for simplified control?
Yes - tying CE and OE together enables basic read-only operation with single-control-line simplicity. However, this eliminates independent control of chip select vs. output enable, forfeiting tACE/tDOE timing optimization and preventing use of CE-driven power-down during idle periods.
Does the 2.0 V data retention apply across the full temperature range?
Yes - the datasheet specifies VDR = 2.0 V minimum over the full industrial temperature range (–40 °C to +85 °C). Data retention current (ICCDR) remains ≤ 3 mA at 2.0 V and +85 °C, validated per JEDEC JESD22-A107 reliability testing.
CY7C1019DV33-10BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1019DV33-10BVXIT FAQ
1.How can I place an order for CY7C1019DV33-10BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1019DV33-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1019DV33-10BVXIT reliable?
The price and inventory of CY7C1019DV33-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1019DV33-10BVXIT is usually 5 days.
3.What payment methods are accepted for CY7C1019DV33-10BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1019DV33-10BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1019DV33-10BVXIT?
CY7C1019DV33-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1019DV33-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1019DV33-10BVXIT?
For technical support, including CY7C1019DV33-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1019DV33-10BVXIT requirements.
6.How does Aetrix verify that CY7C1019DV33-10BVXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1019DV33-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1019DV33-10BVXIT meets industry standards.
7.What is the process for return or replacement of CY7C1019DV33-10BVXIT?
All CY7C1019DV33-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1019DV33-10BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1019DV33-10BVXIT part is unused and in its original packaging.
Return procedure for CY7C1019DV33-10BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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