Infineon Technologies CY7C1019DV33-10VXI

Overview

CY7C1019DV33-10VXI from Cypress Semiconductor is a 1-Mbit (128 K × 8) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and automatic CE-controlled power-down. It features center power/ground pinout, 3 mA standby current (ISB2), and 2.0 V data retention-designed for industrial embedded systems requiring deterministic timing and low-power memory in space-constrained PCB layouts.

For engineers reviewing the CY7C1019DV33-10VXI datasheet, CY7C1019DV33-10VXI pinout, CY7C1019DV33-10VXI application, or CY7C1019DV33-10VXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 3 mA CMOS standby current, CE/OE/WE three-state control logic, and compatibility with 32-pin SOJ/TSOP II and 48-ball VFBGA packages.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive 128 K × 8 array with fully decoded address inputs (A0–A16), bidirectional I/O0–I/O7, and TTL/CMOS-compatible control signals (CE#, OE#, WE#). Its automatic power-down activates when CE# is HIGH, reducing ICC to 3 mA without external sequencing.

The device supports three distinct read cycles (address-, OE-, and CE-controlled) and two write modes (CE/WE overlap or OE-assisted), with guaranteed tRC = 10 ns, tDOE = 5 ns, and tHZOE = 5 ns output disable timing-all specified at VCC = 3.3 V ± 0.3 V and TA = –40 °C to +85 °C.

Key Specifications

Pinout & Package

Package: 32-pin 400-mil wide Molded SOJ (standard for CY7C1019DV33-10VXI per ordering code "VXI"). Pin count and physical layout match JEDEC MS-012AC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with AS6C1008-10TIN and IS61LV102416-10TL, CY7C1019DV33-10VXI uniquely balances industrial temperature support, 2.0 V data retention, and pin-compatible upgrade path from legacy Cypress SRAMs-making it optimal for retrofit and long-lifecycle designs.

Availability

CY7C1019DV33-10VXI is available at Aetrix Electronics and suitable for industrial PLCs, automotive body control modules, telecom line cards, and medical imaging front-ends requiring stable component supply across multi-year production programs.

Supply support for CY7C1019DV33-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets with focus on signal integrity and long-term supply stability.

CY7C1019DV33 belongs to Cypress's legacy high-speed asynchronous SRAM product line, engineered specifically for deterministic timing-critical applications where refresh-free operation and fast random access are mandatory.

FAQ

What is the maximum clock frequency supported for read/write operations?

CY7C1019DV33-10VXI does not use a clock signal-it is an asynchronous SRAM. Maximum effective throughput is determined by tRC = 10 ns, enabling up to 100 MHz sustained random access rate. Timing is governed solely by CE#, OE#, and WE# edge relationships, not by a system clock.

Can this SRAM retain data during a complete power loss?

No-CY7C1019DV33-10VXI requires continuous VCC ≥ 2.0 V to retain data. It is not non-volatile. Data retention mode reduces current to ≤3 mA but does not eliminate power dependency; backup capacitors or supercapacitors must maintain VCC ≥ 2.0 V for retention duration.

Is the 32-pin SOJ package lead-free and RoHS compliant?

Yes-the "VXI" suffix denotes Pb-free, RoHS-compliant 32-pin 400-mil SOJ packaging per Cypress datasheet 38-05481 Rev. *J. The device meets JEDEC J-STD-020 MSL3 and has been qualified for reflow soldering up to 260 °C peak temperature.

How does the automatic power-down feature interact with OE# and WE#?

Power-down is triggered exclusively by CE# HIGH state-OE# and WE# have no effect on ISB2 current draw. When CE# is HIGH, the device enters low-power mode regardless of OE# or WE# logic levels, and all I/Os go high-impedance within 10 ns (tPD).