Infineon Technologies CY7C1019DV33-10VXIT

Overview

CY7C1019DV33-10VXIT from Cypress Semiconductor is a 1-Mbit (128 K × 8) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and automatic CE-controlled power-down. It features center power/ground pinout, 3 mA standby current (ISB2), and 2.0 V data retention-designed for embedded control memory buffers in industrial PLCs and real-time data acquisition systems.

For engineers reviewing the CY7C1019DV33-10VXIT datasheet, CY7C1019DV33-10VXIT pinout, CY7C1019DV33-10VXIT application, or CY7C1019DV33-10VXIT equivalent, key selection criteria include tAA ≤ 10 ns read timing, ISB2 ≤ 3 mA low-power standby, CE/OE/WE three-state control logic, and Pb-free 48-ball VFBGA package compatibility with space-constrained industrial controllers.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array organized as 131,072 × 8 bits with fully decoded address inputs (A0–A16) and bidirectional I/O0–I/O7 pins. Its automatic power-down activates when CE is HIGH, reducing ICC to 3 mA (ISB2) without external control logic.

Read operations require CE and OE LOW with WE HIGH; writes require CE and WE LOW while OE may be HIGH or LOW. Output enable timing (tDOE = 5 ns) and chip-enable disable timing (tHZCE = 5 ns) support tight bus cycle integration in microcontroller-based systems with 100 MHz clock domains.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), RoHS-compliant, 6.5 mm × 8.0 mm body, 0.8 mm ball pitch, bottom-side thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with AS6C1008-10TIN and IS61LV102416-10ML, CY7C1019DV33-10VXIT uniquely balances VFBGA miniaturization, 8-bit native interface, and guaranteed 10 ns timing across −40°C to +85°C-making it optimal for space-constrained industrial controllers requiring minimal firmware impact.

Availability

CY7C1019DV33-10VXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical sensor nodes, automotive telematics loggers, and ATE pattern memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1019DV33-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

CY7C1019DV33 belongs to Cypress's high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency memory buffering in real-time embedded systems operating across industrial temperature grades.

FAQ

Is CY7C1019DV33-10VXIT pin-compatible with CY7C1019DV33-10ZSXI?

No. CY7C1019DV33-10VXIT uses a 48-ball VFBGA package (6.5 mm × 8.0 mm), while CY7C1019DV33-10ZSXI uses a 32-pin TSOP II package (11.8 mm × 13.1 mm). Pin numbering, ball/pad layout, and thermal pad configuration differ entirely-PCB redesign is required for substitution.

Does this SRAM support asynchronous burst reads?

No. CY7C1019DV33-10VXIT is a classic asynchronous SRAM with no internal burst counter or sequential address generation. Each read requires a full address setup (tAA = 10 ns) and CE/OE assertion-burst transfers must be managed externally by the host controller.

What is the maximum junction temperature during continuous operation at 100 MHz?

At 100 MHz, ICC = 60 mA, and with θJA = 36 °C/W (VFBGA), power dissipation is ~0.198 W. With TA = +85°C, TJ ≈ 85 + (0.198 × 36) = +92.1°C-within the rated 125°C absolute maximum, leaving 33°C margin for reliability derating.

Can CE and OE both be tied LOW permanently for simplified interface?

Yes, but only if the host never performs writes. With CE and OE permanently LOW, outputs remain enabled continuously-requiring strict control of WE to avoid bus contention. For read-only boot memory, this reduces control logic; for R/W use, independent CE/OE control is mandatory per timing specifications.