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Infineon Technologies CY7C1020B-12ZXC

Part No.:
CY7C1020B-12ZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1020B-12ZXC.pdf
Description:
IC SRAM 512KBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,304

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Product details

Overview

CY7C1020B-12ZXC from Cypress Semiconductor is a 32K × 16-bit (512 Kbit) high-speed CMOS static RAM with 12 ns access time, 5 V supply, and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/ BLE controls and operates in commercial temperature range (0°C to +70°C). Used in embedded controllers, network interface buffers, and real-time data acquisition systems requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1020B-12ZXC datasheet, CY7C1020B-12ZXC pinout, CY7C1020B-12ZXC application, or CY7C1020B-12ZXC equivalent, key selection criteria include tAA ≤ 12 ns, ISB2 ≤ 3 mA standby current, dual-byte enable architecture, TSOP II lead-free packaging, and compatibility with 5 V TTL/CMOS bus interfaces.

Technical Context

The CY7C1020B-12ZXC implements a fully asynchronous SRAM core with separate upper- and lower-byte write enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its address space spans A0–A14 (15 bits), supporting 32,768 word locations, each 16 bits wide across I/O1–I/O16.

Power management relies on automatic CE-driven transition to low-power mode (ISB2 = 3 mA max), triggered when CE rises above VCC – 0.3 V. Output timing is referenced to OE/CE/BHE/BLE transitions, with tHZOE = 7 ns and tLZCE = 3 ns ensuring fast bus release and contention avoidance in multi-device systems.

Key Specifications

Parameter Value and Actual Design Meaning
tAA 12 ns maximum - guarantees data valid within 12 ns of stable address, enabling direct interfacing with 80 MHz microcontrollers without wait states.
ICC (max) 140 mA at fMAX - corresponds to ~825 mW active power, suitable for thermally constrained industrial control modules.
ISB2 (max) 3 mA at VCC = 5.5 V - enables <16.5 mW standby consumption, critical for battery-backed or energy-harvested systems.
VCC Range 5 V ±10% - ensures compatibility with legacy 5 V logic families and eliminates need for level-shifting in mixed-voltage designs.
Package 44-pin TSOP II (lead-free) - provides 400-mil width, JEDEC-standard footprint, and thermal resistance ΘJA = 50.55 °C/W for PCB-level thermal design.
Byte Enable BHE and BLE inputs - allow simultaneous or independent 8-bit writes to upper/lower bytes, reducing bus traffic in 16-bit peripheral register mapping.

Pinout & Package

Package: 44-pin TSOP Type II (JEDEC MO-143AC), lead-free, 400-mil body width, 0.8 mm pitch, surface-mount.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit address bus selecting one of 32,768 memory words; no internal latching - requires stable address during CE LOW.
I/O1–I/O8 Data I/O (Lower Byte) Bi-directional 8-bit data path enabled only when BLE = LOW and CE/OE conditions met; high-impedance when deselected.
I/O9–I/O16 Data I/O (Upper Byte) Bi-directional 8-bit data path enabled only when BHE = LOW and CE/OE conditions met; isolated from lower byte during partial writes.
CE Chip Enable Primary device select; drives automatic power-down when HIGH (ISB2 mode); must be LOW for all read/write operations.
OE Output Enable Controls output drivers only; does not affect power state - outputs float when OE HIGH even if CE LOW.
WE Write Enable Active-LOW write strobe; initiates write when CE and WE both LOW; timing referenced to tPWE (min 8 ns pulse width).
BLE / BHE Byte Low/High Enable Independent 8-bit write gating; allows granular 1-, 2-, or 8-byte updates without disturbing adjacent data in same word.
VCC / VSS Power / Ground Single 5 V supply; two VCC pins (pins 16 & 37) and two VSS pins (pins 15 & 30) reduce IR drop and improve noise immunity.

Key Features

Feature Design Value
12 ns access time Enables zero-wait-state operation with 80 MHz CPU buses and eliminates external wait-state generators in FPGA-based controllers.
Independent byte write control Eliminates read-modify-write overhead for 8-bit peripheral register updates, reducing bus cycles by up to 50% in I/O-mapped systems.
Automatic CE power-down Reduces standby current to 3 mA without external logic or software intervention, simplifying low-power sleep mode implementation.
Lead-free TSOP II package Meets RoHS Directive 2011/65/EU and IPC/JEDEC J-STD-020D moisture sensitivity level 3 (MSL-3), qualified for reflow soldering.
High noise immunity VIL = 0.8 V and VIH = 2.2 V thresholds ensure robust operation in electrically noisy industrial environments with ±2001 V ESD tolerance.

Applications

Industrial PLC Data Buffer Network Packet Buffer

Use Scenario: Storing real-time I/O scan data between CPU execution cycles in programmable logic controllers.

IC Role / Device Role / Timing Role: Asynchronous 512 Kbit scratchpad memory with deterministic 12 ns read latency and byte-selectable writes for register-mapped I/O.

Use Value: Enables deterministic 100 µs scan cycle times without DMA arbitration, reducing jitter in motion control loops.

Use Scenario: Temporary storage of Ethernet frame payloads in switch ASIC support circuitry before forwarding or filtering.

IC Role / Device Role / Timing Role: Dual-port-capable buffer using BHE/BLE to separate header (upper byte) and payload (lower byte) handling.

Use Value: Allows concurrent header parsing and payload assembly, cutting packet processing latency by 18 ns per frame vs. full-word access.

FPGA Configuration Cache Digital Signal Acquisition Buffer

Use Scenario: Holding configuration bitstreams and runtime lookup tables for Xilinx Spartan-3 FPGAs during dynamic reconfiguration.

IC Role / Device Role / Timing Role: Fast-access nonvolatile-equivalent memory mapped into FPGA's local bus, accessed via dedicated AXI-lite interface.

Use Value: Supports sub-100 µs partial reconfiguration windows, enabling adaptive filter coefficient updates in real-time audio processing.

Use Scenario: Capturing synchronized 16-bit ADC samples from vibration sensors in predictive maintenance edge nodes.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer with CE-gated auto-power-down between sampling bursts to extend battery life.

Use Value: Achieves 1.2 Msps sustained capture with <16.5 mW idle power, extending coin-cell battery life to >18 months in unattended deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV51216AL-12MLI Same 32K × 16 organization, 12 ns tAA, but uses 3.3 V supply and has higher ISB (10 µA vs. 3 mA) - no automatic CE power-down. Requires level-shifting for 5 V systems; better suited for portable 3.3 V designs where ultra-low standby (<10 µA) is mandatory. Select when migrating to 3.3 V infrastructure or when nanowatt standby outweighs 5 V compatibility.
ON Semiconductor MC68HC16RAM16K 5 V, 15 ns tAA, SOJ package only; lacks BHE/BLE - supports full-word writes only; ISB = 5 mA (CMOS). Compatible pinout for legacy SOJ layouts but cannot perform byte-select writes - forces software workarounds for 8-bit peripheral access. Select only for drop-in replacement in existing SOJ-based designs where byte granularity is unused.

Compared with IS61LV51216AL-12MLI and MC68HC16RAM16K, the CY7C1020B-12ZXC uniquely combines 5 V operation, 12 ns speed, automatic CE power-down, and true dual-byte write capability - making it optimal for industrial 5 V systems requiring deterministic timing and partial-word efficiency.

Availability

CY7C1020B-12ZXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration caching, and digital signal acquisition requiring stable component supply and long-term manufacturability.

Supply support for CY7C1020B-12ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with headquarters in San Jose, CA.

The CY7C1020B series delivers high-speed, low-power parallel SRAMs optimized for real-time embedded systems where deterministic access, byte-granular writes, and 5 V bus compatibility are essential.

FAQ

Is CY7C1020B-12ZXC compatible with 5 V TTL logic levels?

Yes. The device specifies VIH = 2.2 V minimum and VIL = 0.8 V maximum at VCC = 5 V, meeting standard 5 V TTL input thresholds. VOH = 2.4 V min and VOL = 0.4 V max ensure reliable driving of TTL loads with 4 mA sink/source capability.

Does CY7C1020B-12ZXC require external pull-up resistors on BHE/BLE pins?

No. BHE and BLE are active-LOW TTL/CMOS-compatible inputs with no internal pull-ups. They must be driven actively to VIL or VIH; floating states are undefined and may cause partial or failed writes. External termination is required only if traces exceed 4 inches or operate in noisy environments.

What is the maximum operating frequency supported by CY7C1020B-12ZXC?

The device has no clock input and operates asynchronously. Its maximum usable bus frequency depends on system timing margins: with tRC = 12 ns, it supports up to ~83 MHz burst transfers when interfaced with controllers having matching setup/hold timing, such as ARM7TDMI or ColdFire MCF52xx derivatives.

Can CY7C1020B-12ZXC be used in automotive applications?

No. It is specified only for commercial temperature range (0°C to +70°C) and lacks AEC-Q100 qualification. Cypress does not warrant its use in safety-critical or automotive environments; industrial-grade alternatives like CY7C1021DV33-15ZXC (–40°C to +85°C) are recommended for extended temperature needs.

CY7C1020B-12ZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
512Kbit
Memory Organization:
32K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1020B-12ZXC FAQ

1.How can I place an order for CY7C1020B-12ZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1020B-12ZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1020B-12ZXC reliable?

The price and inventory of CY7C1020B-12ZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1020B-12ZXC is usually 5 days.

3.What payment methods are accepted for CY7C1020B-12ZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1020B-12ZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1020B-12ZXC?

CY7C1020B-12ZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1020B-12ZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1020B-12ZXC?

For technical support, including CY7C1020B-12ZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1020B-12ZXC requirements.

6.How does Aetrix verify that CY7C1020B-12ZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1020B-12ZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1020B-12ZXC meets industry standards.

7.What is the process for return or replacement of CY7C1020B-12ZXC?

All CY7C1020B-12ZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1020B-12ZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1020B-12ZXC part is unused and in its original packaging.

Return procedure for CY7C1020B-12ZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1020B-12ZXC Tags

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