Infineon Technologies CY7C1020BN-12ZXC

Overview

CY7C1020BN-12ZXC from Cypress Semiconductor is a 32K × 16-bit (512 Kbit) high-speed CMOS static RAM with 12 ns access time, 5 V supply, and automatic CE-controlled power-down. It supports independent byte-wide write enable via BHE/BLE pins and operates across commercial temperature range (0°C to +70°C). Used in legacy industrial controllers and FPGA configuration buffers where deterministic low-latency read/write timing is required.

For engineers reviewing the CY7C1020BN-12ZXC datasheet, CY7C1020BN-12ZXC pinout, CY7C1020BN-12ZXC application, or CY7C1020BN-12ZXC equivalent, key selection criteria include tAA = 12 ns, dual-byte write control, TSOP II 44-pin Pb-free packaging, and ISB2 standby current ≤ 3 mA under CMOS input conditions.

Technical Context

This SRAM implements a synchronous, non-volatile-independent memory array with full address decoding (A0–A15), 16 bidirectional I/O lines (I/O1–I/O16), and TTL/CMOS-compatible control logic for CE, OE, WE, BHE, and BLE. Its architecture enables concurrent lower- and upper-byte writes without bus contention.

The device uses a two-stage decode path-row decoder (A7–A0, A12–A14) and column decoder (A9–A11, A12–A14)-with sense amplifiers driving outputs through controlled output drivers. Power-down activation occurs automatically when CE is HIGH, reducing ICC to ISB2 ≤ 3 mA at VCC max and f = 0.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP Type II), Pb-free, body size 10.16 mm × 20.95 mm, 0.8 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with AS6C1008-12TIN and IS61LV51216-12ML, the CY7C1020BN-12ZXC offers native 5 V operation and 44-pin TSOP II compatibility-critical for maintaining legacy board layouts and avoiding voltage translation overhead in retrofit upgrades.

Availability

CY7C1020BN-12ZXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration storage, legacy controller cache expansion, and communications protocol stack buffering requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1020BN-12ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies since 2020) designed high-reliability mixed-signal and memory ICs for industrial, automotive, and consumer applications, with emphasis on timing precision and robustness.

The CY7C1020BN series was developed specifically for 5 V embedded systems requiring fast, low-power, byte-selectable SRAM-targeting programmable controllers, test equipment, and FPGA-based platforms prior to widespread 3.3 V adoption.

FAQ

Is CY7C1020BN-12ZXC compatible with 3.3 V logic interfaces?

No. The CY7C1020BN-12ZXC is specified only for 5.0 V ±10% operation. Its VIH minimum is 2.2 V and VIL maximum is 0.8 V, which align with 5 V TTL levels-not 3.3 V CMOS thresholds. Direct connection to 3.3 V microcontrollers risks undriven inputs or excessive current leakage; level-shifting circuitry is mandatory.

Does this SRAM retain data when VCC drops below specification?

No. The CY7C1020BN-12ZXC is a volatile static RAM with no internal battery or capacitor backup. Data retention ceases when VCC falls below 2.0 V, and the device enters undefined state below –0.5 V or above +7.0 V. External hold-up capacitors or supervisory circuits are required for graceful power-loss data preservation.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. When both BHE and BLE are LOW while CE and WE are LOW, the device performs a full 16-bit write to the addressed location. The truth table explicitly lists "Write – All bits" mode under CE=LOW, WE=LOW, BLE=LOW, BHE=LOW, confirming concurrent activation is supported and electrically safe.

What is the maximum clock frequency supported for burst read operations?

The CY7C1020BN-12ZXC does not support clocked or burst-mode operation. It is an asynchronous SRAM: each read cycle requires explicit CE and OE assertion, with minimum tRC = 12 ns between successive accesses. Maximum effective throughput is 83.3 MHz (1/12 ns), but only under ideal address-stable, control-synchronized conditions-not sustained burst rates.