Infineon Technologies CY7C1020BN-12ZXCT

Overview

CY7C1020BN-12ZXCT from Cypress Semiconductor is a 32K × 16-bit (512 Kbit) CMOS static RAM with 12 ns access time, 5 V supply, and automatic CE-controlled power-down. It supports independent byte-wide write enable via BHE/ BLE pins and operates across commercial temperature range (0°C to +70°C). Used in embedded controllers, industrial PLCs, and legacy communication interface buffers requiring non-volatile-compatible fast SRAM.

For engineers reviewing the CY7C1020BN-12ZXCT datasheet, CY7C1020BN-12ZXCT pinout, CY7C1020BN-12ZXCT application, or CY7C1020BN-12ZXCT equivalent, key selection criteria include tAA = 12 ns read timing, dual-byte control architecture, TSOP II package compatibility, and CMOS standby current of 3 mA max - critical for low-power memory subsystems in space-constrained designs.

Technical Context

The CY7C1020BN-12ZXCT implements a fully asynchronous 32,768-word × 16-bit memory array with separate high- and low-byte I/O paths. Its read cycle is initiated by concurrent CE and OE assertion while WE remains HIGH, enabling data output within 12 ns (tAA) and full cycle completion in 12 ns (tRC).

Write operation requires CE and WE LOW, with optional byte-select granularity via BHE (I/O9–I/O16) and BLE (I/O1–I/O8). All I/O pins enter high-impedance state during deselection (CE HIGH), output disable (OE HIGH), or write cycles - ensuring clean bus sharing without external isolation.

Key Specifications

Pinout & Package

44-pin Thin Small Outline Package (TSOP II), 10.16 mm × 20.0 mm body, 0.8 mm pitch, JEDEC MO-141AC compliant. RoHS-compliant lead-free finish (ZXC suffix indicates Pb-free; ZC denotes standard).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 32K × 16-bit SRAM applications.

Compared with AS6C1008-12TIN and IS61LV51216-12MLI, the CY7C1020BN-12ZXCT delivers native 16-bit byte-select capability in a compact 44-pin TSOP II, achieving lower active power (140 mA) and proven integration in commercial-grade industrial control systems.

Availability

CY7C1020BN-12ZXCT is available at Aetrix Electronics and suitable for industrial PLC data buffers, legacy communication interface memory, and embedded instrumentation display cache requiring stable component supply and long-lifecycle support.

Supply support for CY7C1020BN-12ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions, founded in 1982 and headquartered in San Jose, CA.

The CY7C1020BN belongs to Cypress's legacy high-speed CMOS SRAM product line, designed specifically for 16-bit microprocessor and microcontroller systems needing deterministic, low-latency memory access without refresh overhead.

FAQ

Is CY7C1020BN-12ZXCT compatible with 3.3 V logic interfaces?

No. The CY7C1020BN-12ZXCT is strictly a 5 V device: VIH minimum is 2.2 V, but VCC must be 5.0 V ±10%, and input tolerance is –0.5 V to VCC + 0.5 V. Direct connection to 3.3 V controllers requires level-shifting on all address, control, and data lines to avoid overvoltage damage or undefined logic states.

Does this SRAM require an external clock or refresh circuitry?

No. The CY7C1020BN-12ZXCT is a fully static RAM: it retains data indefinitely as long as VCC is applied and does not require clock signals, refresh cycles, or periodic access. Its operation is purely asynchronous and governed solely by CE, OE, WE, BHE, and BLE timing.

What is the maximum data retention time when VCC is removed?

Data retention is not specified for VCC-off conditions. The device requires continuous VCC to maintain stored data. For backup operation, external capacitive hold-up (e.g., 100 µF) can sustain VCC above 4.5 V for ~10 seconds after main power loss - sufficient for controlled shutdown but not long-term nonvolatile storage.

Can BLE and BHE be asserted simultaneously for full 16-bit writes?

Yes. When both BLE and BHE are LOW, the CY7C1020BN-12ZXCT performs a full 16-bit write using I/O1–I/O16. This is the default mode for word-aligned memory stores and matches standard 16-bit microprocessor bus behavior without additional glue logic.