Infineon Technologies CY7C1020CV26-15ZSXET

Overview

CY7C1020CV26-15ZSXET from Infineon Technologies (formerly Cypress) is a 512-Kbit (32 K × 16) high-speed CMOS static RAM with 15 ns access time, 2.5–2.7 V supply voltage, automotive-grade temperature range (–40 °C to +125 °C), and automatic CE-controlled power-down. It serves as a nonvolatile-buffered data storage element in engine control units, ADAS sensor fusion modules, and infotainment head units requiring deterministic read/write latency.

For engineers reviewing the CY7C1020CV26-15ZSXET datasheet, CY7C1020CV26-15ZSXET pinout, CY7C1020CV26-15ZSXET application, or CY7C1020CV26-15ZSXET equivalent, key selection criteria include byte-selectable I/O (BHE/ BLE), TSOP II 44-pin package compatibility, tAA = 15 ns timing compliance, and ISB2 ≤ 5 mA CMOS standby current under automotive thermal stress.

Technical Context

This SRAM implements independent upper- and lower-byte write enable via BHE and BLE inputs, enabling partial-word writes without disturbing adjacent bytes. Its dual-byte architecture supports 16-bit data bus interfacing while maintaining full addressability across 32,768 words.

The device uses TTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and delivers CMOS-level outputs (VOH ≥ 2.3 V, VOL ≤ 0.4 V) at 2.5 V min supply. Power-down activation occurs automatically when CE is HIGH, reducing ICC to ≤ 5 mA (ISB2) with CMOS input conditions.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), 400 mil width, JEDEC MO-141AC compliant, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61WV51216EDLL-15BLI and AS6C1008-15TIN, CY7C1020CV26-15ZSXET uniquely combines 2.5 V operation, –40 °C to +125 °C qualification, and ≤5 mA standby current-making it the only option for power-constrained, thermally aggressive automotive control nodes.

Availability

CY7C1020CV26-15ZSXET is available at Aetrix Electronics and suitable for engine control units, ADAS sensor hubs, infotainment display subsystems, and telematics gateways requiring stable component supply across extended automotive product lifecycles.

Supply support for CY7C1020CV26-15ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for deterministic, low-power, high-reliability data buffering in automotive electronic control modules.

FAQ

Is CY7C1020CV26-15ZSXET pin-compatible with CY7C1020DV26-15ZSXE?

Yes, both share identical 44-pin TSOP II pinout, address/data bus mapping, and control signal assignments. The 'C' suffix denotes automotive qualification (–40 °C to +125 °C), while 'D' indicates commercial grade (0 °C to +70 °C); all electrical timing and DC parameters match within spec.

Can this SRAM operate at 3.3 V?

No. The absolute maximum VCC is 4.6 V, but the specified operating range is strictly 2.5 V to 2.7 V. Operation at 3.3 V violates the datasheet's recommended conditions and risks excessive ICC, timing violations, and reduced reliability-especially at high temperature.

What is the maximum clock frequency supported for burst reads?

This is an asynchronous SRAM with no internal clock. Maximum effective throughput depends on external bus timing: with tRC = 15 ns, the theoretical peak read rate is 66.7 MHz (1/15 ns). Real-world performance is limited by MCU bus controller setup/hold margins and PCB trace length.

Does CY7C1020CV26-15ZSXET support battery backup operation?

No. It lacks built-in battery-switching circuitry or VBAT pin. While ISB2 ≤ 5 mA enables low-current hold during brief power interruptions, sustained backup requires external supervision circuitry and a dedicated backup power source-not provided by this device.