Infineon Technologies CY7C1020D-10VXI

Overview

CY7C1020D-10VXI from Cypress Semiconductor is a 512-Kbit (32 K × 16) asynchronous CMOS static RAM with 10 ns access time, 5 V ±0.5 V supply, and independent byte enable (BHE/ BLE) for 16-bit data bus segmentation. It operates from –40 °C to +85 °C and supports TTL-level interfacing in microprocessor-based memory subsystems.

For engineers reviewing the CY7C1020D-10VXI datasheet, CY7C1020D-10VXI pinout, CY7C1020D-10VXI application, or CY7C1020D-10VXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 3 mA CMOS standby current, dual-byte write control, 2.0 V data retention, and SOJ/TSOP II package compatibility.

Technical Context

The CY7C1020D-10VXI implements a fully static 32,768 × 16-bit SRAM array with separate high- and low-byte enables (BHE, BLE), enabling partial-word writes without external logic. Its automatic CE-controlled power-down reduces ICC to 3 mA when deselected, meeting industrial temperature requirements.

It features TTL-compatible input thresholds (VIH = 2.2 V min, VIL = 0.8 V max) and outputs compliant with 5 V CMOS VOH/VOL levels. The device requires no clock or refresh circuitry and supports three-state output control via OE, CE, BHE, and BLE simultaneously.

Key Specifications

Pinout & Package

Package: 44-pin SOJ (400-mil wide) or 44-pin TSOP II - both RoHS-compliant, surface-mount, and pin-identical for drop-in replacement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with AS6C1008-10TIN and IS61LV51216-10TLI, CY7C1020D-10VXI uniquely delivers 5 V TTL compatibility, integrated byte masking, and sub-5 mA CMOS standby-making it irreplaceable in legacy industrial 5 V memory subsystems requiring deterministic low-power hold.

Availability

CY7C1020D-10VXI is available at Aetrix Electronics and suitable for industrial PLCs, automotive engine control units, and legacy microcontroller-based instrumentation requiring stable component supply over extended product lifecycles.

Supply support for CY7C1020D-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1020D belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for pin- and function-compatible upgrades of 5 V TTL-based memory systems in long-lifecycle embedded applications.

FAQ

Is CY7C1020D-10VXI compatible with 3.3 V microcontrollers?

No. CY7C1020D-10VXI requires 5 V ±0.5 V supply and accepts only TTL-level inputs (VIH ≥ 2.2 V). Its outputs are not 3.3 V tolerant, and interfacing with 3.3 V logic requires level-shifting circuitry per Application Note AN6081.

Does CY7C1020D-10VXI support true 16-bit simultaneous read/write?

No. While the device has a 16-bit data bus (IO0–IO15), it performs byte-level writes: IO0–IO7 require BLE = LOW, and IO8–IO15 require BHE = LOW. Full 16-bit writes need both BHE and BLE asserted LOW concurrently.

What is the significance of ISB2 = 3 mA versus ISB1 = 10 mA?

ISB2 applies when CMOS input thresholds are met (VIN > VCC – 0.3 V or VIN < 0.3 V), enabling deeper power-down. ISB1 applies under TTL input conditions (VIH > 2.2 V, VIL < 0.8 V) and yields higher standby current-designers must bias inputs to CMOS thresholds to achieve 3 mA.

Can CY7C1020D-10VXI retain data during power interruption?

Yes. At VCC ≥ 2.0 V and CE HIGH, the device enters data retention mode with ICCDR ≤ 3 mA. Data remains valid for indefinite duration if VCC stays ≥ 2.0 V and ambient temperature remains within –40 °C to +85 °C.