Infineon Technologies CY7C1020D-10VXIT

Overview

CY7C1020D-10VXIT from Cypress Semiconductor is a 512-Kbit (32 K × 16) high-speed CMOS static RAM with 10 ns access time, 5 V ±0.5 V supply, and independent byte enable (BHE/ BLE) for 16-bit data bus segmentation. It features automatic CE-controlled power-down (ISB2 = 3 mA), 2.0 V data retention, and TTL-level input compatibility - deployed in industrial embedded controllers requiring deterministic memory access.

For engineers reviewing the CY7C1020D-10VXIT datasheet, CY7C1020D-10VXIT pinout, CY7C1020D-10VXIT application, or CY7C1020D-10VXIT equivalent, key selection criteria include tAA ≤ 10 ns read timing, dual-byte write control, CMOS standby current ≤ 3 mA, and SOJ/TSOP II package compatibility with legacy 5 V microcontroller buses.

Technical Context

The CY7C1020D-10VXIT implements a synchronous, non-volatile-retentive SRAM array organized as 32,768 × 16 bits with fully decoded address inputs (A0–A14). Its control logic supports three distinct operational modes: full-word read/write, upper-byte (IO8–IO15) access via BHE, and lower-byte (IO0–IO7) access via BLE - all gated by CE and WE with OE-driven output enable.

Power management relies on automatic CE-based transition between active (ICC = 80 mA @ 10 ns) and standby (ISB2 = 3 mA) states, with data retention guaranteed down to VCC = 2.0 V. Input thresholds are TTL-compatible (VIH ≥ 2.2 V, VIL ≤ 0.8 V), making it unsuitable for pure CMOS I/O systems requiring VIH ≥ 3.5 V.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (10.16 mm × 18.42 mm, 0.8 mm pitch), RoHS-compliant, surface-mountable with exposed pad thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with AS6C1008-10TIN and IS61LV51216-10TLI, the CY7C1020D-10VXIT uniquely delivers 5 V TTL compatibility with 10 ns access and 3 mA standby - making it irreplaceable in legacy 5 V industrial designs where input threshold alignment is non-negotiable.

Availability

CY7C1020D-10VXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive ECU scratchpads, and medical infusion pump controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1020D-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with emphasis on signal integrity and long-term manufacturability.

The CY7C1020D belongs to Cypress's legacy parallel SRAM product line, engineered specifically for direct interfacing with 5 V TTL microcontrollers and FPGAs in deterministic real-time systems where access latency and bus compatibility are critical.

FAQ

Is CY7C1020D-10VXIT compatible with 3.3 V microcontrollers?

No. The device requires 5 V ±0.5 V supply and accepts only TTL-level inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V). While some 3.3 V MCUs may tolerate 5 V inputs, the datasheet explicitly warns against use with CMOS I/O systems requiring VIH ≥ 3.5 V. Level-shifting circuitry is mandatory for safe integration.

What happens to data during power interruption?

Data remains valid down to VCC = 2.0 V, allowing retention during brown-out or controlled power-down. However, the device lacks non-volatility: power must remain ≥2.0 V continuously. No internal capacitor or backup source is included; external hold-up capacitance or battery is required for extended retention.

Can CY7C1020D-10VXIT be used in place of CY7C1020B?

Yes - it is pin- and function-compatible per datasheet Feature section. The -10VXIT offers identical timing (10 ns), same package (44-pin TSOP II), and enhanced power-down behavior (ISB2 = 3 mA vs. older B-version's higher standby). No PCB or firmware changes are needed for drop-in replacement.

Does this SRAM support asynchronous burst reads?

No. The CY7C1020D-10VXIT is a classic asynchronous SRAM with no internal burst counter or sequential address generation. Each read requires full address setup (tAA = 10 ns) and separate CE/OE assertion. Burst access must be implemented externally via address sequencing logic or host processor loop control.