My Inquiry
My Account
Infineon Technologies CY7C1020D-10ZSXI
- Part No.:
- CY7C1020D-10ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1020D-10ZSXI.pdf
- Description:
- IC SRAM 512KBIT PAR 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:310
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1020D-10ZSXI from Cypress Semiconductor is a 512-Kbit (32 K × 16) asynchronous CMOS static RAM with 10 ns access time, 5 V ±0.5 V supply, and independent byte-wide control via BHE/ BLE pins. It supports TTL-level interfacing, features automatic CE-controlled power-down (ISB2 = 3 mA), and operates across –40 °C to +85 °C for industrial embedded memory buffering.
For engineers reviewing the CY7C1020D-10ZSXI datasheet, CY7C1020D-10ZSXI pinout, CY7C1020D-10ZSXI application, or CY7C1020D-10ZSXI equivalent, key selection criteria include tAA = 10 ns read timing, dual-byte enable architecture, 2.0 V data retention capability, and SOJ/TSOP II package compatibility with legacy 5 V microcontroller buses.
Technical Context
This SRAM implements a full asynchronous interface with separate Chip Enable (CE), Output Enable (OE), Write Enable (WE), and byte-select controls (BHE/BLE). All control inputs accept TTL-compatible voltage thresholds (VIH = 2.2 V min, VIL = 0.8 V max), enabling direct connection to older 5 V microprocessors without level-shifting.
It uses a 32,768 × 16-bit array organized with row/column decoding and sense amplifiers. Power management relies on automatic CE-driven transition into low-current standby (ISB2 = 3 mA) when deselected, while maintaining data integrity down to VCC = 2.0 V with no external refresh required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 512 Kbit (32 K × 16) - provides 64 KB of byte-addressable storage for firmware buffers or real-time data tables |
| Access time (tAA) | 10 ns - enables direct interface with 100 MHz bus systems without wait states |
| Supply voltage | 5 V ±0.5 V - matches legacy TTL/CMOS processor I/O rails; not compatible with 3.3 V-only systems |
| Standby current (ISB2) | 3 mA - reduces system power during idle cycles in battery-backed or energy-sensitive applications |
| Data retention voltage | 2.0 V - allows memory contents to persist during brown-out or controlled low-power sleep modes |
| Input compatibility | TTL-level only - VIH(min) = 2.2 V, VIL(max) = 0.8 V; unsuitable for pure CMOS 5 V interfaces requiring ≥3.5 V VIH |
| Operating temperature | –40 °C to +85 °C - qualified for industrial control, motor drives, and instrumentation environments |
Pinout & Package
Package: 44-pin TSOP II (Thin Small Outline Package), 400-mil width, RoHS-compliant, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit address bus supporting 32,768 word locations; latched on CE/WE transitions |
| IO0–IO7 | Data I/O (lower byte) | Bi-directional 8-bit data path enabled by BLE; high-impedance when BLE or CE/OE inactive |
| IO8–IO15 | Data I/O (upper byte) | Bi-directional 8-bit data path enabled by BHE; independent of lower byte for partial writes |
| CE | Chip Enable | Active-low global select; initiates power-up (tPU = 0 µs) and triggers ISB2 standby mode when HIGH |
| OE | Output Enable | Active-low output gate; controls data bus drive but does not affect internal state or power mode |
| WE | Write Enable | Active-low write strobe; combined with CE and BHE/BLE to define write cycle boundaries (tWC = 10 ns) |
| BLE | Byte Low Enable | Active-low control for IO0–IO7; allows 8-bit writes without disturbing upper byte contents |
| BHE | Byte High Enable | Active-low control for IO8–IO15; enables independent upper-byte access in mixed-width systems |
| VCC | Power supply | +5 V ±0.5 V main supply; two dedicated pins reduce IR drop and improve noise immunity |
| VSS | Ground | Signal and power ground reference; two pins support stable return paths for I/O switching |
Key Features
| Feature | Design Value |
|---|---|
| Independent byte write control | Separate BHE and BLE inputs allow concurrent or selective 8-bit writes to upper/lower data bytes without read-modify-write overhead |
| Automatic CE power-down | Hardware-triggered transition to 3 mA standby current when CE is deasserted - no software or external logic required |
| TTL-compatible input thresholds | VIH(min) = 2.2 V and VIL(max) = 0.8 V enable plug-in replacement for legacy 5 V microprocessor SRAM interfaces |
| 2.0 V data retention | Retains stored data at VCC as low as 2.0 V - supports graceful shutdown, backup battery operation, and brown-out recovery |
| High-speed 10 ns access | tAA = 10 ns and tRC = 10 ns meet timing requirements of 100 MHz bus clocks with zero wait-state operation |
Applications
| Industrial PLC Data Buffering | Legacy Microcontroller Firmware Cache |
|---|---|
Use Scenario: Real-time I/O scan buffers in programmable logic controllers require fast, reliable non-refreshed memory for cyclic process data exchange. IC Role / Device Role / Timing Role: Asynchronous SRAM providing 32 K × 16-bit scratchpad storage with deterministic 10 ns read/write latency aligned to scan cycle clocks. Use Value: Eliminates DRAM refresh overhead and guarantees data coherency during power interruptions down to 2.0 V VCC. | Use Scenario: External code/data cache for 8051 or Z80-based industrial controllers running legacy firmware with fixed memory maps. IC Role / Device Role / Timing Role: Pin-compatible SRAM replacing CY7C1020B in existing 5 V bus designs, delivering identical timing and byte-enable functionality. Use Value: Enables drop-in upgrade path with no PCB or firmware changes while reducing active power by 20% (ICC = 80 mA vs prior gen). |
| Motor Drive Position Lookup Table | Test Equipment Pattern Memory |
Use Scenario: Storing calibrated sinusoidal commutation tables for brushless DC motor control in servo drives operating across wide temperature ranges. IC Role / Device Role / Timing Role: Static RAM holding 32 K entries of 16-bit angle-to-PWM values, accessed synchronously with PWM timer interrupts. Use Value: Guaranteed –40 °C to +85 °C operation ensures table integrity under thermal stress; 10 ns access prevents interrupt latency jitter. | Use Scenario: High-speed digital pattern generation in automated test equipment requiring deterministic waveform replay from preloaded memory. IC Role / Device Role / Timing Role: Dual-byte-accessible SRAM feeding parallel 16-bit data streams to DACs or FPGA I/O banks at >100 MHz effective rate. Use Value: Independent BHE/BLE control allows interleaved loading of even/odd sample sets without bus contention or arbitration delays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | 3.3 V only supply (3.3 V ±0.3 V); tAA = 10 ns; ISB = 1 µA; CMOS input thresholds (VIH = 2.0 V min) | Requires level-shifting or redesign for 5 V systems; superior standby efficiency but incompatible voltage domain | Select only for new 3.3 V designs where ultra-low ISB justifies requalification and layout change |
| CY7C1021DV33-10ZSXI | 3.3 V supply (3.3 V ±0.3 V); 512 Kbit (32 K × 16); tAA = 10 ns; TTL-compatible inputs retained; ISB2 = 2 µA | Direct 3.3 V replacement with same pinout and timing, but requires VCC rail change and decoupling update | Preferred upgrade path for migrating legacy 5 V systems to 3.3 V while preserving firmware and timing behavior |
Compared with AS6C1008-10TIN and CY7C1021DV33-10ZSXI, CY7C1020D-10ZSXI uniquely supports native 5 V TTL interfacing without translation, making it irreplaceable in field-deployed industrial hardware where voltage rail changes are prohibited.
Availability
CY7C1020D-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller firmware caching, and motor drive position lookup table applications requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1020D-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on interoperability and long-lifecycle support.
CY7C1020D belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for drop-in replacement of aging 5 V TTL memory in mission-critical industrial control systems where timing predictability and voltage compatibility are non-negotiable.
FAQ
Is CY7C1020D-10ZSXI compatible with 3.3 V microcontrollers?
No. CY7C1020D-10ZSXI requires a 5 V ±0.5 V supply and accepts only TTL-level inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V). It lacks 3.3 V tolerance and will not operate reliably with 3.3 V I/O standards. For 3.3 V systems, consider CY7C1021DV33-10ZSXI, which maintains pinout and timing but uses a 3.3 V supply.
What is the function of BHE and BLE pins?
BHE (Byte High Enable) and BLE (Byte Low Enable) are independent active-low signals that gate the upper (IO8–IO15) and lower (IO0–IO7) data bytes respectively. When asserted, they enable read/write operations on their respective 8-bit lanes without affecting the other byte - enabling efficient partial-word updates in mixed-width architectures.
Does CY7C1020D-10ZSXI require an external clock or refresh circuitry?
No. As a static RAM, CY7C1020D-10ZSXI is fully asynchronous and requires no clock signal or periodic refresh. Data retention is maintained indefinitely as long as VCC remains ≥2.0 V and CE is held HIGH during standby - eliminating refresh controller complexity and associated power overhead.
Can CY7C1020D-10ZSXI be used in automotive applications?
No. CY7C1020D-10ZSXI is specified only for industrial temperature range (–40 °C to +85 °C) and is not AEC-Q100 qualified. It lacks automotive-grade screening, extended temperature validation (–40 °C to +125 °C), or enhanced ESD/latch-up robustness required for under-hood or safety-critical vehicle systems.
CY7C1020D-10ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 512Kbit
- Memory Organization:
- 32K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1020D-10ZSXI FAQ
1.How can I place an order for CY7C1020D-10ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1020D-10ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1020D-10ZSXI reliable?
The price and inventory of CY7C1020D-10ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1020D-10ZSXI is usually 5 days.
3.What payment methods are accepted for CY7C1020D-10ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1020D-10ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1020D-10ZSXI?
CY7C1020D-10ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1020D-10ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1020D-10ZSXI?
For technical support, including CY7C1020D-10ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1020D-10ZSXI requirements.
6.How does Aetrix verify that CY7C1020D-10ZSXI is sourced from the original manufacturer or authorized distributors?
All CY7C1020D-10ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1020D-10ZSXI meets industry standards.
7.What is the process for return or replacement of CY7C1020D-10ZSXI?
All CY7C1020D-10ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1020D-10ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1020D-10ZSXI part is unused and in its original packaging.
Return procedure for CY7C1020D-10ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1020D-10ZSXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
