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Infineon Technologies CY7C1020D-10ZSXIT

Part No.:
CY7C1020D-10ZSXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1020D-10ZSXIT.pdf
Description:
IC SRAM 512KBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,821

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Product details

Overview

CY7C1020D-10ZSXIT from Cypress Semiconductor is a 512-Kbit (32 K × 16) asynchronous CMOS static RAM with 10 ns access time, 5 V ±0.5 V supply, 80 mA active current, 3 mA CMOS standby current, and 2.0 V data retention voltage. It serves as a high-speed, byte-selectable memory buffer in industrial microcontroller and DSP subsystems requiring deterministic read/write timing and TTL-level compatibility.

For engineers reviewing the CY7C1020D-10ZSXIT datasheet, CY7C1020D-10ZSXIT pinout, CY7C1020D-10ZSXIT application, or CY7C1020D-10ZSXIT equivalent, key selection criteria include tAA = 10 ns read latency, independent BHE/ BLE control for 8-bit sub-word writes, automatic CE-driven power-down, and SOJ/TSOP II package compatibility with legacy 44-pin SRAM footprints.

Technical Context

The CY7C1020D-10ZSXIT implements a fully asynchronous 32,768 × 16-bit SRAM array with dual-byte enable architecture: BLE controls IO0–IO7 (lower byte), BHE controls IO8–IO15 (upper byte). Address decoding uses A0–A14 (15-bit), supporting 32K word addressing without external latching.

It features three power states: active (CE/WE/OE asserted per cycle), standby (CE HIGH), and data retention (VCC = 2.0 V, CE HIGH). Input thresholds are TTL-compatible (VIH = 2.2 V min, VIL = 0.8 V max), not CMOS-compatible, and output drive meets –4.0 mA/8.0 mA specs at VOH ≥ 2.4 V and VOL ≤ 0.4 V.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization32 K × 16 bits - supports 16-bit parallel bus interfacing without data splitting
Access Time (tAA)10 ns - enables direct coupling to 100 MHz bus cycles with zero wait states
Supply Voltage5 V ±0.5 V - matches legacy 5 V logic families and eliminates level-shifting needs
Active Current (ICC)80 mA @ 10 ns - defines peak power draw during sustained burst reads/writes
Standby Current (ISB2)3 mA - enables low-power hold mode when deselected with CMOS inputs
Data Retention Voltage2.0 V - allows battery-backed operation below nominal VCC while preserving contents
Input CompatibilityTTL-level only - VIH ≥ 2.2 V, VIL ≤ 0.8 V; incompatible with pure CMOS input thresholds

Pinout & Package

Package: 44-pin TSOP II (Thin Small Outline Package), 400-mil width, RoHS-compliant, surface-mount.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address Inputs15-bit address bus accepting 0–32767 word locations; no internal latching
IO0–IO7Lower Data I/OBi-directional 8-bit data path enabled only when BLE = LOW
IO8–IO15Upper Data I/OBi-directional 8-bit data path enabled only when BHE = LOW
CEChip EnableActive-LOW global select; drives automatic power-down when HIGH
OEOutput EnableActive-LOW read control; places outputs in Hi-Z when HIGH
WEWrite EnableActive-LOW write strobe; initiates write when CE and WE both LOW
BLEByte Low EnableActive-LOW control for lower byte (IO0–IO7); enables partial-word writes
BHEByte High EnableActive-LOW control for upper byte (IO8–IO15); enables partial-word writes
VCCPower Supply+5 V ±0.5 V main supply; two dedicated pins reduce IR drop
VSSGroundSignal and power ground reference; two dedicated pins improve noise immunity

Key Features

FeatureDesign Value
Independent Byte Enables (BHE/BLE)Enables 8-bit sub-word writes without masking or read-modify-write cycles
Automatic CE Power-DownReduces ICC from 80 mA to 3 mA within 10 ns of CE deassertion
TTL-Compatible InputsEliminates need for external level shifters when interfacing with 5 V microcontrollers
2.0 V Data RetentionPermits backup power operation using coin-cell batteries or supercapacitors
High-Z Output ControlEnsures bus contention-free sharing with multiple devices via OE, CE, and BHE/BLE

Applications

Industrial PLC Data BufferDSP Algorithm Scratchpad

Use Scenario: Real-time I/O scan buffering in programmable logic controllers operating across –40 °C to +85 °C ambient.

IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM providing zero-wait-state storage for process image tables and register mapping.

Use Value: 10 ns tAA ensures deterministic response to fast scan cycles; 3 mA ISB2 reduces thermal load during idle polling intervals.

Use Scenario: Temporary coefficient and intermediate result storage in fixed-point audio DSP engines.

IC Role / Device Role / Timing Role: Byte-selectable memory enabling simultaneous 8-bit filter taps and 16-bit accumulator staging.

Use Value: Independent BHE/BLE allows concurrent low-byte coefficient updates and high-byte accumulation without bus arbitration.

Legacy 5 V Microcontroller ExpansionAutomated Test Equipment Memory Cache

Use Scenario: External memory expansion for 8051- and Z80-based embedded controllers retaining original 5 V bus architecture.

IC Role / Device Role / Timing Role: Pin-compatible SRAM replacement supporting TTL-level address/data/control signaling.

Use Value: VIH = 2.2 V min and VOL = 0.4 V max ensure reliable interfacing without level translators or pull-up adjustments.

Use Scenario: High-speed pattern buffer in boundary-scan test systems requiring rapid vector loading and verification.

IC Role / Device Role / Timing Role: Burst-access memory staging test vectors prior to JTAG chain injection.

Use Value: tRC = 10 ns and tDOE = 5 ns enable full-speed vector delivery synchronized to 100 MHz test clocks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS6C4008-10TIN4 Mbit (256 K × 16), 10 ns, 3.3 V only, CMOS input thresholdsRequires level shifting for 5 V TTL buses; higher density but incompatible voltage domainSelect only if migrating to 3.3 V system architecture and needing >512 Kbit capacity
IS61LV25616AL-10TLI4 Mbit (256 K × 16), 10 ns, 3.3 V, LVTTL-compatible inputs (VIH = 2.0 V)Supports 3.3 V systems with marginal TTL compatibility; lacks 2.0 V data retentionPrefer for new 3.3 V designs where extended low-voltage retention is not required

Compared with AS6C4008-10TIN and IS61LV25616AL-10TLI, the CY7C1020D-10ZSXIT uniquely delivers 5 V TTL compatibility, 2.0 V data retention, and proven industrial temperature operation-making it irreplaceable in legacy 5 V control systems requiring battery-backed state preservation.

Availability

CY7C1020D-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, DSP algorithm scratchpad storage, and legacy 5 V microcontroller expansion requiring stable component supply over extended product lifecycles.

Supply support for CY7C1020D-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure.

The CY7C1020D belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for pin- and function-compatible upgrades of 5 V TTL-based systems requiring deterministic timing and robust data retention.

FAQ

Is CY7C1020D-10ZSXIT compatible with 3.3 V logic interfaces?

No. The device requires 5 V ±0.5 V supply and has TTL-level input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), not CMOS or LVTTL. Direct connection to 3.3 V controllers risks undervoltage VIH violations and unreliable operation. Level translation is mandatory for mixed-voltage systems.

What happens to data when VCC drops to 2.0 V?

At VCC = 2.0 V with CE HIGH, the device enters data retention mode and preserves stored bits indefinitely, drawing ≤3 mA. This is specified and tested per JEDEC JESD22-A107. No refresh or external clock is needed-only stable 2.0 V bias and deselection.

Can CY7C1020D-10ZSXIT perform simultaneous read and write on different bytes?

No. The device is strictly asynchronous and single-port: only one operation (read or write) may occur per cycle. BHE/BLE enable selective byte access *within* a single read or write cycle-not concurrent operations. True simultaneous R/W requires dual-port or QDR SRAM.

Does the TSOP II package support reflow soldering per J-STD-020?

Yes. The CY7C1020D-10ZSXIT in TSOP II package is qualified for lead-free reflow per J-STD-020D, with peak temperature up to 260 °C and floor life of 168 hours at ≤30 °C/60% RH when sealed per MSL 3 requirements.

CY7C1020D-10ZSXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
512Kbit
Memory Organization:
32K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1020D-10ZSXIT FAQ

1.How can I place an order for CY7C1020D-10ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1020D-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1020D-10ZSXIT reliable?

The price and inventory of CY7C1020D-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1020D-10ZSXIT is usually 5 days.

3.What payment methods are accepted for CY7C1020D-10ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1020D-10ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1020D-10ZSXIT?

CY7C1020D-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1020D-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1020D-10ZSXIT?

For technical support, including CY7C1020D-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1020D-10ZSXIT requirements.

6.How does Aetrix verify that CY7C1020D-10ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1020D-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1020D-10ZSXIT meets industry standards.

7.What is the process for return or replacement of CY7C1020D-10ZSXIT?

All CY7C1020D-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1020D-10ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1020D-10ZSXIT part is unused and in its original packaging.

Return procedure for CY7C1020D-10ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1020D-10ZSXIT Tags

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