Infineon Technologies CY7C1020DV33-10ZSXI

Overview

CY7C1020DV33-10ZSXI from Cypress Semiconductor is a 512 Kbit (32 K × 16) asynchronous CMOS static RAM with 10 ns access time, 3.3 V supply, and independent byte-enable control for upper/lower data words. It features automatic CE-controlled power-down (ISB2 = 3 mA), 2.0 V data retention, and operates across –40 °C to +85 °C for industrial embedded memory applications.

For engineers reviewing the CY7C1020DV33-10ZSXI datasheet, CY7C1020DV33-10ZSXI pinout, CY7C1020DV33-10ZSXI application, or CY7C1020DV33-10ZSXI equivalent, key selection criteria include tAA = 10 ns read timing, dual-byte write capability via BHE/ BLE, low-active CE/OE/WE logic, TSOP II packaging, and compatibility with legacy CY7C1020CV33 designs.

Technical Context

The device implements a fully decoded 32 K × 16-bit SRAM array with separate row/column decoders and sense amplifiers. Address inputs A0–A14 select one of 32,768 locations, while I/O0–I/O15 provide bidirectional 16-bit data transfer with independent byte masking via BLE (I/O0–I/O7) and BHE (I/O8–I/O15).

Its automatic power-down mode activates when CE is HIGH, reducing ICC to ISB2 = 3 mA under CMOS input conditions; data retention remains valid at VCC = 2.0 V. All control signals (CE, OE, WE, BLE, BHE) are active-low and TTL/CMOS compatible, supporting seamless integration into 3.3 V microcontroller and FPGA memory interfaces.

Key Specifications

Pinout & Package

Package: 44-pin TSOP Type II (Pb-free), 400-mil width, surface-mount compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV51216AL-10MLI and CY7C1020DV33-10ZSXI, this part uniquely guarantees 2.0 V data retention and 3 mA ISB2-making it the only choice for industrial systems where memory state must survive brown-out events without external support circuitry.

Availability

CY7C1020DV33-10ZSXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics display controllers, and automated test equipment requiring stable component supply and long-lifecycle support.

Supply support for CY7C1020DV33-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

The CY7C1020D series belongs to Cypress's Fast Asynchronous SRAM family, designed specifically for high-reliability, low-latency memory expansion in real-time embedded systems where deterministic timing and power efficiency are critical.

FAQ

What is the maximum clock frequency supported by CY7C1020DV33-10ZSXI?

This is an asynchronous SRAM-not a synchronous device-so it has no clock input or maximum clock frequency. Its performance is defined by access time (tAA = 10 ns) and cycle time (tRC = 10 ns), enabling reliable operation with bus frequencies up to 100 MHz when interfaced to controllers with appropriate timing margins and no wait states.

Can CY7C1020DV33-10ZSXI operate with 2.5 V supply?

No. The device is specified only for 3.3 V ± 0.3 V (i.e., 3.0 V to 3.6 V). Operation at 2.5 V violates the Absolute Maximum Ratings and will result in undefined behavior, including failure to retain data or meet timing specifications. Data retention is guaranteed only down to 2.0 V-but only after power-down, not during active operation.

Is the TSOP II package lead-free and RoHS compliant?

Yes. The "ZSXI" suffix explicitly denotes Pb-free (lead-free) construction in a 44-pin TSOP Type II package, fully compliant with EU RoHS Directive 2011/65/EU and JEDEC JS-709C standards. The package uses matte tin terminations and meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements.

How does byte-enable functionality improve system-level design?

BLE and BHE allow independent 8-bit writes to upper or lower data bytes without reading-modify-write cycles. This reduces bus traffic by 50% in protocols requiring frequent partial updates (e.g., CAN message buffers, UART FIFOs, or register banks), lowers power consumption, and eliminates race conditions in multi-master systems where full-word writes could corrupt adjacent fields.