Infineon Technologies CY7C10212CV33-12BAXE

Overview

CY7C10212CV33-12BAXE from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 12 ns access time, automotive-grade temperature range (–40 °C to +125 °C), 3.3 V ±10% supply, and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/BLE and is used in engine control units, ADAS domain controllers, and industrial PLCs requiring deterministic low-latency memory access.

For engineers reviewing the CY7C10212CV33-12BAXE datasheet, CY7C10212CV33-12BAXE pinout, CY7C10212CV33-12BAXE application, or CY7C10212CV33-12BAXE equivalent, key selection criteria include tAA = 12 ns read timing, dual-byte enable architecture, FBGA-48 package compatibility, and ISB2 ≤ 10 mA standby current under CMOS input conditions.

Technical Context

This SRAM implements a synchronous, address-decoded 64K × 16-bit array with separate row/column decoders and sense amplifiers. Read and write operations are controlled by CE, OE, WE, BHE, and BLE signals with defined setup/hold and transition timing per JEDEC-compliant AC waveforms.

It features TTL- and CMOS-compatible input thresholds, bidirectional I/O0–I/O15 with high-impedance control on deselect, and automatic power-down when CE is HIGH - reducing ICC to ≤10 mA (ISB2) at f = 0 without external gating logic.

Key Specifications

Pinout & Package

48-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.8 mm ball pitch, 6 mm × 8 mm body size, and JEDEC MO-270AC compliant footprint. Thermal resistance θJA = 95.32 °C/W enables operation at full rating in sealed enclosures up to +125 °C ambient.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61WV102416BLL-12MLI and AS6C1008-12TIN, CY7C10212CV33-12BAXE uniquely delivers AEC-Q100 qualified operation, FBGA thermal efficiency, and hardware-managed power-down - making it the only option for space-constrained, thermally aggressive automotive control nodes.

Availability

CY7C10212CV33-12BAXE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and railway signaling systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C10212CV33-12BAXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor, now part of Infineon Technologies, designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications.

The CY7C10212CV33 belongs to Cypress's automotive-qualified SRAM product line, engineered specifically for deterministic timing, low-power standby, and robust operation in harsh electromagnetic and thermal environments.

FAQ

What is the maximum operating frequency supported by CY7C10212CV33-12BAXE?

The device supports a maximum read/write cycle time (tRC) of 12 ns, corresponding to an effective maximum operating frequency of 83.3 MHz. This is guaranteed across the full automotive temperature range (–40 °C to +125 °C) and 3.3 V ±10% supply, with no derating required for timing margin.

Does CY7C10212CV33-12BAXE require external pull-up resistors on control pins?

No external pull-ups are required. Input thresholds meet TTL and CMOS standards (VIH ≥ 2.0 V, VIL ≤ 0.8 V), and internal weak pull-downs on CE, WE, OE, BHE, and BLE ensure defined logic states during power-up and reset. External termination is only needed for impedance matching on long traces.

Can CY7C10212CV33-12BAXE operate with mixed voltage interfaces?

No. The device is strictly 3.3 V-only: VCC must be 3.3 V ±10%, and all inputs (including OE, WE, CE, BHE, BLE) are referenced to this supply. Applying 5 V or 1.8 V signals violates absolute maximum ratings and risks latch-up or permanent damage.

How does the automatic power-down feature behave during dynamic operation?

When CE transitions HIGH during active operation, the device enters power-down mode within tPD ≤ 12 ns, reducing ICC to ≤10 mA (ISB2). All I/Os go high-impedance immediately (tHZCE ≤ 6 ns), and internal arrays retain data indefinitely as long as VCC remains within specification - no refresh or external control needed.