Infineon Technologies CY7C1021B-12VXC
- Part No.:
- CY7C1021B-12VXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021B-12VXC.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:1,870
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Product details
Overview
CY7C1021B-12VXC from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns access time, 5 V ±10% supply, industrial temperature range (–40°C to +85°C), and Pb-free 44-pin SOJ packaging. It supports independent byte write control via BHE/ BLE, automatic CE-based power-down (ISB2 = 10 mA), and operates in embedded microcontroller systems requiring deterministic, non-volatile-critical data buffering.
For engineers reviewing the CY7C1021B-12VXC datasheet, CY7C1021B-12VXC pinout, CY7C1021B-12VXC application, or CY7C1021B-12VXC equivalent, key selection criteria include tAA ≤12 ns read timing, dual-byte enable architecture, industrial-grade thermal performance (θJA = 64.32°C/W), and compatibility with legacy 5 V parallel bus interfaces in avionics and industrial PLCs.
Technical Context
The CY7C1021B-12VXC implements a synchronous, address-decoded 64K × 16 SRAM array with separate row/column decoders and sense amplifiers. Its read/write control logic requires precise timing coordination among CE, OE, WE, BHE, and BLE-each active-low-with overlapping low states defining valid write cycles.
Power management relies on CE-driven automatic transition between active (ICC ≤140 mA) and standby (ISB2 = 10 mA) modes. Input/output pins are tri-stated during deselection (CE HIGH), output disable (OE HIGH), byte disable (BHE/BLE HIGH), or write operations (WE LOW), ensuring clean bus isolation in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16 (1,048,576 bits); enables 16-bit parallel data transfers without external multiplexing. |
| Access Time (tAA) | 12 ns max at 5 V, –40°C to +85°C; guarantees deterministic read latency for real-time control loops. |
| Supply Voltage | 5 V ±10%; compatible with standard TTL/CMOS logic rails and eliminates need for voltage translation. |
| Standby Current (ISB2) | 10 mA max (CMOS inputs); reduces system-level quiescent power in sleep-mode industrial gateways. |
| Operating Temperature | –40°C to +85°C; validated for use in factory automation controllers exposed to ambient thermal cycling. |
| Package | 44-pin 400-mil SOJ, Pb-free; meets RoHS compliance and supports wave-solder reflow profiles. |
| Byte Write Control | Dual active-low BHE/BLE signals; allows independent 8-bit writes to upper/lower data bytes without masking logic. |
Pinout & Package
44-pin 400-mil SOJ package with gull-wing leads, 0.050" lead pitch, and JEDEC MO-118AC mechanical outline. Thermal resistance θJA = 64.32°C/W, θJC = 31.03°C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus interface; selects one of 65,536 memory locations with no internal address latching. |
| I/O1–I/O8 | Data I/O (Lower Byte) | Bidirectional 8-bit data path enabled only when BLE = LOW; isolated otherwise. |
| I/O9–I/O16 | Data I/O (Upper Byte) | Bidirectional 8-bit data path enabled only when BHE = LOW; fully independent of lower byte control. |
| CE | Chip Enable | Active-low chip select; initiates power-up (tPU = 0 ns) and triggers automatic ISB2 standby on HIGH. |
| WE | Write Enable | Active-low write strobe; must overlap with CE LOW and BHE/BLE LOW to initiate valid write cycle. |
| OE | Output Enable | Active-low output driver control; forces I/O pins into high-Z state when HIGH, enabling bus sharing. |
| BHE / BLE | Byte High/Low Enable | Independent active-low controls for upper/lower data bytes; enables partial-word writes without software masking. |
| VCC (Pins 11, 33) | Power Supply | +5 V ±10% main supply; dual VCC pins reduce IR drop and improve noise immunity on wide buses. |
| VSS (Pins 12, 34) | Ground | System ground reference; dual GND pins minimize ground bounce in high-speed read/write transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Independent byte write control | Separate BHE and BLE inputs allow concurrent or selective 8-bit writes to upper/lower data lanes-reducing bus arbitration overhead in 16-bit microprocessor systems. |
| Automatic CE power-down | Reduces ICC from 140 mA to 10 mA within 12 ns (tPD) when CE goes HIGH-critical for energy-constrained programmable logic controllers. |
| Tri-state I/O with multiple disable conditions | I/O pins enter high-impedance state on CE HIGH, OE HIGH, BHE/BLE HIGH, or WE LOW-ensuring robust bus contention avoidance in multi-SRAM configurations. |
| Industrial temperature support | Validated operation from –40°C to +85°C with full AC/DC specifications-enables deployment in uncontrolled industrial enclosures without derating. |
| Pb-free SOJ packaging | RoHS-compliant 44-pin 400-mil SOJ with JEDEC-standard footprint-supports legacy board layouts while meeting modern environmental regulations. |
Applications
| Industrial PLC Data Buffering | Avionics Flight Control Memory |
|---|---|
|
Use Scenario: Real-time I/O scanning and register mapping in modular programmable logic controllers with 16-bit data buses. IC Role / Device Role / Timing Role: Primary working memory for ladder logic execution engine; provides sub-12 ns deterministic read/write response to CPU address strobes. Use Value: Eliminates wait states in cyclic scan routines due to guaranteed tAA ≤12 ns and zero hold-time requirements (tHA = 0 ns). |
Use Scenario: Non-volatile-critical scratchpad storage for flight control surface position buffers in certified airborne computing modules. IC Role / Device Role / Timing Role: Dual-port-accessible SRAM bank interfaced to dual-redundant ARINC 659 or MIL-STD-1553 bus controllers. Use Value: Independent BHE/BLE enables synchronized 8-bit updates to left/right elevator actuator registers without corrupting adjacent data. |
| Medical Imaging Frame Buffer | Test Equipment Pattern Generator |
|
Use Scenario: Intermediate frame storage in portable ultrasound devices where image data streams from ADC at 20 MSPS. IC Role / Device Role / Timing Role: Parallel write buffer accepting 16-bit pixel words from pipeline ADC; read by display controller at variable rates. Use Value: Automatic CE power-down cuts standby current to 10 mA during inter-frame idle periods-extending battery life in handheld units. |
Use Scenario: Vector pattern storage in automated test equipment generating 16-bit stimulus sequences for ASIC validation. IC Role / Device Role / Timing Role: Static pattern repository accessed by high-speed pattern sequencer with strict setup/hold timing (tSD = 6 ns, tHD = 0 ns). Use Value: Guaranteed tWC = 12 ns and tSCE = 9 ns enable reliable 83 MHz pattern clocking without external timing compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV102416-12MLI | Same 64K × 16 organization, 12 ns access, but uses 44-pin TSOP-II (not SOJ); higher ISB2 = 15 mA. | Requires PCB footprint redesign; better suited for space-constrained boards where TSOP thermal profile (θJA = 76.89°C/W) is acceptable. | Select if board layout supports TSOP-II and thermal margin permits higher standby current. |
| ON Semiconductor MC68HC11E9CP | Not a drop-in replacement: integrated MCU with on-chip 512-byte RAM; lacks external 16-bit parallel interface and 1-Mbit capacity. | Only viable for deeply embedded control where SRAM is replaced by internal memory and peripheral integration is prioritized over bandwidth. | Avoid for SRAM replacement; consider only in greenfield designs where system-on-chip consolidation outweighs memory scalability needs. |
Compared with IS61LV102416-12MLI, CY7C1021B-12VXC offers SOJ footprint compatibility and lower standby current, while MC68HC11E9CP fails to meet basic interface and capacity requirements-making CY7C1021B-12VXC the sole viable option for legacy 44-pin SOJ-based 16-bit bus upgrades.
Availability
CY7C1021B-12VXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, avionics flight control memory, and medical imaging frame buffering requiring stable component supply across extended product lifecycles.
Supply support for CY7C1021B-12VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and aerospace applications.
The CY7C1021B series delivers high-speed, low-power parallel SRAMs optimized for deterministic real-time systems where bus timing predictability and thermal stability are critical.
FAQ
What is the maximum operating frequency supported by CY7C1021B-12VXC?
The device does not specify a clock frequency; instead, it defines timing parameters such as tRC = 12 ns (read cycle time) and tWC = 12 ns (write cycle time). These values imply a maximum effective bus transaction rate of approximately 83 MHz under ideal conditions, assuming zero setup/hold overhead and simultaneous signal transitions.
Can CY7C1021B-12VXC operate with a 3.3 V supply?
No. The datasheet specifies VCC = 5 V ±10% only, with absolute maximum ratings limiting VCC to 7.0 V and minimum to 4.5 V. Operation at 3.3 V violates both functional and reliability specifications, and input thresholds (VIH = 2.2 V min) are not guaranteed at reduced VCC.
How does automatic power-down behave when CE is pulsed briefly?
When CE transitions HIGH, the device enters ISB2 standby mode within tPD = 12 ns, drawing ≤10 mA. If CE returns LOW before internal power-down completes, the device resumes active operation without reset or initialization delay-enabling burst-mode low-power operation in interrupt-driven systems.
Are NC pins (22, 23, 28) required to be tied to ground or left floating?
NC pins are not connected to the die and must remain unconnected-neither grounded nor pulled. Routing traces or solder pads to these pins may cause mechanical stress or unintended coupling; best practice is to omit vias/pads entirely per Cypress design guidelines.
CY7C1021B-12VXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021B-12VXC FAQ
1.How can I place an order for CY7C1021B-12VXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021B-12VXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021B-12VXC reliable?
The price and inventory of CY7C1021B-12VXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021B-12VXC is usually 5 days.
3.What payment methods are accepted for CY7C1021B-12VXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021B-12VXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021B-12VXC?
CY7C1021B-12VXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021B-12VXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021B-12VXC?
For technical support, including CY7C1021B-12VXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021B-12VXC requirements.
6.How does Aetrix verify that CY7C1021B-12VXC is sourced from the original manufacturer or authorized distributors?
All CY7C1021B-12VXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021B-12VXC meets industry standards.
7.What is the process for return or replacement of CY7C1021B-12VXC?
All CY7C1021B-12VXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021B-12VXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021B-12VXC part is unused and in its original packaging.
Return procedure for CY7C1021B-12VXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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