Infineon Technologies CY7C1021B-12VXCT

Overview

CY7C1021B-12VXCT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns access time, 5 V supply, and automatic CE-controlled power-down. It supports independent byte write via BHE/ BLE control, operates from –40°C to +85°C (industrial grade), and is packaged in Pb-free 44-pin TSOP II for space-constrained embedded memory buffering.

For engineers reviewing the CY7C1021B-12VXCT datasheet, CY7C1021B-12VXCT pinout, CY7C1021B-12VXCT application, or CY7C1021B-12VXCT equivalent, key selection criteria include tAA ≤ 12 ns read timing, dual-byte enable architecture, ISB2 standby current ≤ 10 mA, and industrial temperature compliance - critical for real-time data logging and legacy bus interface designs.

Technical Context

The CY7C1021B-12VXCT implements a fully static 64K × 16 RAM array with separate byte-level write control (BHE/BLE), enabling partial-word updates without read-modify-write cycles. Its TTL-compatible inputs and CMOS core deliver low active power (770 mW max) while maintaining 12 ns address-to-data validity under industrial conditions.

Power management relies on CE-driven automatic power-down: when CE is HIGH, ICC drops to ≤10 mA (ISB2), and I/O pins enter high-impedance state regardless of OE, WE, or byte-enable states. The device requires no clocks or refresh, supporting asynchronous parallel bus interfacing with microcontrollers and FPGAs.

Key Specifications

Pinout & Package

44-pin TSOP Type II (JEDEC MO-141AC), Pb-free, 0.8 mm pitch, 10.16 mm × 18.42 mm body size, 1.2 mm max height. Pin 1 marked by notch or dot; pin 11 and 33 are VCC; pins 12 and 34 are VSS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with AS6C1008-12IN and IS61LV1024-12ML, the CY7C1021B-12VXCT uniquely supports 5 V operation, dual-byte writes, and industrial-grade reliability in a drop-in TSOP II footprint - making it the sole viable option for maintaining legacy 5 V embedded systems without bus redesign.

Availability

CY7C1021B-12VXCT is available at Aetrix Electronics and suitable for industrial data loggers, motor drive controllers, and telecom line cards requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1021B-12VXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial and automotive markets.

The CY7C1021B belongs to Cypress's legacy parallel SRAM product line, designed specifically for 5 V embedded systems requiring high-speed, low-power, and industrial-temperature nonvolatile buffer memory without refresh overhead.

FAQ

Is CY7C1021B-12VXCT pin-compatible with CY7C1021B-12VC?

Yes - both share identical 44-pin TSOP II pinout and electrical behavior. The "X" in -12VXCT denotes Pb-free construction, while -12VC uses leaded solder. Mechanical dimensions, thermal resistance (ΘJA = 76.89°C/W), and all timing parameters remain unchanged.

Can CY7C1021B-12VXCT operate at 3.3 V?

No - the device is specified only for 5 V ±10% (4.5 V to 5.5 V). Attempting 3.3 V operation violates VCC min specification and results in undefined timing, increased tAA, and potential data corruption due to insufficient noise margin on TTL-compatible inputs.

What happens to I/O pins when CE is HIGH and OE is LOW?

I/O pins go to high-impedance state regardless of OE level when CE is HIGH. This is explicitly defined in the truth table and functional description: CE HIGH forces automatic power-down and disables all outputs, overriding OE and byte-enable controls.

Does CY7C1021B-12VXCT require external pull-up resistors on BHE/BLE?

No - BHE and BLE are CMOS inputs with VIH ≥ 2.2 V and VIL ≤ 0.8 V at 5 V. When driven directly by microcontroller GPIOs or FPGA I/O banks configured for 5 V-tolerant mode, no pull-ups are needed; floating inputs must be avoided per datasheet guidance.