Infineon Technologies CY7C1021B-12VXI

Overview

CY7C1021B-12VXI from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns access time, 5 V supply, industrial temperature range (–40°C to +85°C), and Pb-free 44-pin SOJ packaging. It supports independent byte-wide write control via BHE/ BLE and automatic CE-based power-down for low standby current (10 mA max).

For engineers reviewing the CY7C1021B-12VXI datasheet, CY7C1021B-12VXI pinout, CY7C1021B-12VXI application, or CY7C1021B-12VXI equivalent, key selection criteria include tAA = 12 ns read timing, dual-byte enable architecture, CMOS-compatible I/O levels (VIH = 2.2 V, VIL = 0.8 V), and industrial-grade thermal performance (ΘJA = 64.32°C/W in SOJ).

Technical Context

The CY7C1021B-12VXI implements a fully decoded 64K × 16 asynchronous SRAM array with separate address decoding paths for row and column selection. Its dual-byte write enable (BHE/BLE) allows granular 8-bit writes without affecting adjacent bytes, reducing bus contention in 16-bit microprocessor systems.

Power management is handled by CE-driven automatic power-down: when CE is HIGH, ICC drops to ISB2 = 10 mA (CMOS input mode), and I/O pins enter high-impedance state regardless of OE, WE, or byte-enable states-enabling seamless bus sharing in multi-peripheral designs.

Key Specifications

Pinout & Package

44-pin SOJ (400-mil width, Pb-free), JEDEC MS-024AC-compliant package with gull-wing leads and 0.050″ lead pitch. Thermal resistance ΘJA = 64.32°C/W enables operation at full speed up to +85°C ambient without forced airflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV102416-12MLI and R1LV102416AS-12SI, the CY7C1021B-12VXI uniquely combines industrial temperature rating, Pb-free SOJ packaging, and dual-byte write enable in a single drop-in solution-critical for long-lifecycle industrial deployments requiring no footprint change.

Availability

CY7C1021B-12VXI is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, medical imaging subsystems, and avionics display controllers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1021B-12VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications.

The CY7C1021B series delivers high-speed, low-power parallel SRAMs optimized for deterministic real-time systems where bus latency and thermal stability are design-critical.

FAQ

Is CY7C1021B-12VXI pin-compatible with CY7C1021B-12VC?

Yes-both use identical 44-pin SOJ (51-85082) footprints and pin functions. The "X" suffix denotes Pb-free construction; all electrical timing, voltage thresholds, and logic behavior match the non-Pb-free version exactly. No PCB redesign is required for RoHS compliance upgrades.

Can CY7C1021B-12VXI operate at 3.3 V?

No-it is specified only for 5 V ±10% (4.5 V to 5.5 V). Attempting 3.3 V operation violates Absolute Maximum Ratings and will result in undefined read/write behavior, excessive tAA, or failure to power-up. Use CY7C1021DV for 3.3 V compatibility.

What is the maximum clock frequency supported for burst reads?

The device is asynchronous-no clock input exists. Maximum effective throughput depends on bus controller timing: with tRC = 12 ns, it supports up to 83.3 MHz sustained read cycles (1/12 ns), assuming zero inter-cycle gap and proper address/data setup/hold margins per the datasheet's AC waveforms.

Does automatic power-down affect data retention?

No-data retention is guaranteed for ≥20 years at +85°C with VCC ≥ 2 V, per Cypress reliability testing. Automatic power-down (triggered by CE HIGH) reduces active current but maintains full VCC bias on memory cells; no data loss occurs during standby.