Infineon Technologies CY7C1021B-12VXIT

Overview

CY7C1021B-12VXIT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns access time, 5 V supply, industrial temperature range (–40°C to +85°C), and automatic CE-controlled power-down. It supports independent byte write via BHE/ BLE pins and is packaged in Pb-free 44-pin TSOP II for embedded memory buffering in real-time control systems.

For engineers reviewing the CY7C1021B-12VXIT datasheet, CY7C1021B-12VXIT pinout, CY7C1021B-12VXIT application, or CY7C1021B-12VXIT equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 = 10 mA CMOS standby current, dual-byte enable architecture, and TSOP II thermal resistance (ΘJA = 76.89°C/W).

Technical Context

The CY7C1021B-12VXIT implements a full 64K × 16 asynchronous SRAM array with separate address decoding paths for row and column selection, enabling deterministic 12 ns address-to-data access. Its dual active-low byte enables (BHE/BLE) allow granular 8-bit writes without affecting adjacent bytes.

Power management relies on CE-driven automatic power-down: when CE is HIGH, ICC drops to 10 mA (ISB2) at VCC = 5 V, with no external control required. All I/Os enter high-impedance state during deselect, OE HIGH, or write cycles-ensuring clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

44-pin TSOP Type II package (JEDEC MO-141AC), Pb-free, 0.8 mm lead pitch, 10.16 mm × 18.42 mm body size, 1.2 mm max height. Thermal resistance ΘJA = 76.89°C/W, ΘJC = 14.28°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV1024-12TQL and MCM6295DW12, the CY7C1021B-12VXIT delivers superior thermal management in TSOP II, native byte-write capability eliminating glue logic, and lower standby current-making it optimal for space-constrained, high-reliability industrial and automotive applications.

Availability

CY7C1021B-12VXIT is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, and medical imaging systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for CY7C1021B-12VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace markets, with headquarters in San Jose, CA.

The CY7C1021B belongs to Cypress's legacy parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded control systems operating across harsh environmental conditions.

FAQ

What is the maximum clock frequency supported by CY7C1021B-12VXIT?

The CY7C1021B-12VXIT is an asynchronous SRAM and does not use a clock signal. Its timing is governed by access parameters: tRC = 12 ns minimum read/write cycle time, enabling effective operation up to approximately 83 MHz in tightly controlled bus systems. No internal clock circuitry exists-timing depends solely on external address and control signal stability.

Does CY7C1021B-12VXIT support battery backup or nonvolatile operation?

No. The CY7C1021B-12VXIT is a volatile CMOS SRAM and loses all stored data when VCC drops below 1.5 V or is removed. It lacks built-in battery-switching circuitry, NVSRAM integration, or auto-store functionality. External battery-backed power supplies or companion nonvolatile memory must be implemented for data retention.

Can CY7C1021B-12VXIT operate at 3.3 V?

No. The device is specified exclusively for 5 V ±10% operation (4.5 V to 5.5 V). Applying 3.3 V violates Absolute Maximum Ratings and results in undefined behavior-including failure to meet tAA = 12 ns, increased ISB, or complete functional failure. A level-shifting interface or voltage regulator is mandatory for 3.3 V system integration.

How does the automatic power-down feature activate?

Automatic power-down activates when Chip Enable (CE) is driven HIGH, regardless of OE or WE state. At that point, ICC drops to ISB2 = 10 mA (CMOS input condition) without requiring OE assertion or software configuration. Power-down is fully hardware-controlled and occurs within tPD = 12 ns after CE transitions HIGH.