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Infineon Technologies CY7C1021B-15VC

Part No.:
CY7C1021B-15VC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1021B-15VC.pdf
Description:
IC SRAM 1MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,300

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Product details

Overview

CY7C1021B-15VC from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 15 ns maximum access time, 5 V ±10% supply, and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/ BLE controls and operates across commercial (0°C to 70°C) and industrial (–40°C to +85°C) temperature ranges. Used in embedded controllers requiring fast, low-power, non-volatile-critical data buffering.

For engineers reviewing the CY7C1021B-15VC datasheet, CY7C1021B-15VC pinout, CY7C1021B-15VC application, or CY7C1021B-15VC equivalent, key selection criteria include tAA = 15 ns read timing, dual-byte write enable architecture, SOJ-44 package compatibility, and ISB2 standby current of 10 µA at CMOS input conditions.

Technical Context

The CY7C1021B-15VC implements a fully decoded 64K × 16 asynchronous SRAM array with separate address latching and bidirectional I/O drivers. Its control logic decouples CE, OE, WE, BHE, and BLE to enable partial-word writes and selective output tri-state management without external gating.

It features two distinct power states: active ICC ≤ 130 mA (industrial), and automatic CE-driven power-down with ISB2 = 10 µA (CMOS inputs). Timing is defined by overlapping signal transitions-tRC = 15 ns, tDOE = 7 ns, tHZOE = 7 ns-with all AC parameters validated under 30-pF load and 1 V/ns edge rates.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 64K words × 16 bits = 1 Mbit; enables 16-bit parallel data bus interfacing without external multiplexing.
Access Time (tAA) 15 ns max (industrial); guarantees valid data on I/O pins within 15 ns after stable address and CE/OE assertion.
Supply Voltage 5 V ±10%; compatible with legacy 5 V TTL/CMOS system rails and eliminates need for level-shifting.
Standby Current (ISB2) 10 µA max (CMOS inputs); reduces quiescent power during idle cycles in battery-backed or low-duty-cycle systems.
Byte Write Control BHE/BLE active-low enables independent 8-bit writes to upper/lower data bytes-critical for mixed-endian or partial-register updates.
Package Type 44-pin 400-mil SOJ (51-85082); surface-mount compatible with standard reflow profiles and board-level repair accessibility.
Operating Temperature –40°C to +85°C (industrial grade); qualified for deployment in industrial PLCs, motor drives, and telecom line cards.

Pinout & Package

44-pin 400-mil SOJ (Standard Outline J-Lead) package with 0.400-inch body width, gull-wing leads, and dual-row 22-pin configuration. Pin 1 marked by notch or dot; lead finish available in Pb-free and SnPb variants.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address Input 16-bit address bus; selects one of 65,536 memory locations; no internal latching-requires stable address before CE/OE assertion.
I/O1–I/O8 Bidirectional Data (Lower Byte) Driven by BLE control; used for reads/writes to D0–D7; tri-stated when BLE HIGH or CE HIGH.
I/O9–I/O16 Bidirectional Data (Upper Byte) Driven by BHE control; used for reads/writes to D8–D15; independent of lower byte operation.
CE Chip Enable (Active Low) Primary device select; initiates power-down when HIGH; must be LOW for any read/write cycle.
WE Write Enable (Active Low) Controls direction of I/O pins; LOW enables write path; HIGH enables read path when OE is also LOW.
OE Output Enable (Active Low) Enables output drivers only; does not initiate read-requires CE LOW and WE HIGH to activate read mode.
BLE / BHE Byte Write Enable (Active Low) BLE enables I/O1–I/O8; BHE enables I/O9–I/O16; both required LOW for full 16-bit write; either alone enables 8-bit partial write.
VCC / VSS Power / Ground Dual VCC (pins 11, 33) and dual VSS (pins 12, 34) reduce IR drop and improve noise immunity in high-speed operation.

Key Features

Feature Design Value
Independent byte write control Enables simultaneous or separate 8-bit writes to upper/lower data bytes-reduces bus contention and simplifies firmware register mapping.
Automatic CE power-down Reduces ICC to 10 µA (ISB2) when CE is HIGH, eliminating need for external power-gating circuitry in sleep-mode designs.
Low 15 ns access time at 5 V Meets timing requirements of 68K, 80C188, and early ARM7-based microcontrollers without wait-state insertion.
SOJ-44 and TSOP-II packaging options SOJ variant (51-85082) offers mechanical robustness and thermal performance (ΘJA = 64.32°C/W); TSOP-II enables higher board density.
Industrial temperature qualification Validated across –40°C to +85°C with full AC/DC specs-supports deployment in uncontrolled industrial enclosures without derating.

Applications

Industrial PLC Data Buffers Legacy Microcontroller Memory Expansion

Use Scenario: Real-time I/O scan buffers in programmable logic controllers require deterministic 16-bit data access with minimal latency and zero refresh overhead.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing non-refreshed, random-access storage for process image tables and register banks.

Use Value: 15 ns tAA ensures sub-20 ns worst-case read latency, enabling 50 kHz scan rates in motion-control applications without CPU wait states.

Use Scenario: Adding external RAM to 80C188EB or Motorola 68EC000-based embedded controllers where on-chip RAM is insufficient for firmware+data.

IC Role / Device Role / Timing Role: Parallel memory mapped as 0x000000–0x00FFFF; accessed via dedicated address/data bus with glue logic.

Use Value: Dual-byte write capability allows efficient 16-bit register updates and avoids software bit-banging for partial word stores.

Telecom Line Card Packet Buffers Automotive Engine Control Unit (ECU) Calibration Storage

Use Scenario: Temporary packet staging in T1/E1 framer interfaces where bursty traffic demands fast, predictable read/write turnaround.

IC Role / Device Role / Timing Role: High-speed buffer between serial framer and host processor; managed via DMA with CE/OE strobing.

Use Value: tHZOE = 7 ns and tLZCE = 3 ns minimize bus release delay, supporting >10 MB/s sustained throughput in full-duplex mode.

Use Scenario: Storing runtime-calibrated lookup tables (e.g., fuel maps, spark advance curves) in automotive ECUs where EEPROM endurance is limiting.

IC Role / Device Role / Timing Role: Volatile shadow RAM loaded at boot from flash; updated dynamically during closed-loop tuning sessions.

Use Value: Industrial-grade –40°C to +85°C operation ensures reliability across engine bay thermal cycling without data retention loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV1024-15K Same 64K × 16 organization, 15 ns access, SOJ-44; lower ISB2 = 5 µA but requires 3.3 V supply. Not drop-in compatible due to VCC = 3.3 V; requires level-shifting in 5 V systems. Select if migrating to 3.3 V architecture and lower standby power is critical.
ON Semiconductor MC68HC16RAM16 16-bit SRAM with identical 5 V, 15 ns, SOJ-44 spec; lacks BHE/ BLE-only full-word writes supported. Requires external logic for byte-select writes; increases PCB area and firmware complexity. Choose only when byte-write functionality is unused and second-source assurance is prioritized.

Compared with IS61LV1024-15K and MC68HC16RAM16, the CY7C1021B-15VC uniquely delivers 5 V-compatible, true dual-byte write capability with industrial temperature support-making it optimal for legacy 16-bit controller upgrades where timing, voltage, and partial-word access are jointly constrained.

Availability

CY7C1021B-15VC is available at Aetrix Electronics and suitable for industrial PLCs, legacy microcontroller memory expansion, and telecom line card packet buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1021B-15VC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1021B series was developed to deliver pin-compatible, high-speed 5 V SRAM alternatives for aging 16-bit microprocessor platforms-emphasizing timing predictability, low-power standby, and industrial environmental resilience.

FAQ

What is the maximum operating current for CY7C1021B-15VC at industrial temperature?

The maximum operating supply current (ICC) is 130 mA under industrial conditions (–40°C to +85°C), measured at VCC = 5.5 V, f = 1/tRC, and IOUT = 0 mA. This value reflects worst-case dynamic power during continuous read/write cycling with full 16-bit bus activity.

Can CY7C1021B-15VC operate with only BLE asserted and BHE deasserted?

Yes. When BLE = LOW and BHE = HIGH, the device performs 8-bit reads/writes exclusively on I/O1–I/O8. The upper byte (I/O9–I/O16) remains in high-impedance state, preserving data integrity on shared buses where upper bits may connect to other peripherals.

Is the SOJ-44 package RoHS-compliant?

Yes-both Pb-free (CY7C1021B-15VXC) and SnPb (CY7C1021B-15VC) variants are available. The Pb-free version uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements.

Does CY7C1021B-15VC require an external clock signal?

No. It is a fully asynchronous SRAM-no clock input is required. All operations are controlled solely by CE, OE, WE, BHE, and BLE timing relationships, making it compatible with non-synchronous microprocessors and FPGA-based controllers.

CY7C1021B-15VC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

CY7C1021B-15VC FAQ

1.How can I place an order for CY7C1021B-15VC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1021B-15VC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1021B-15VC reliable?

The price and inventory of CY7C1021B-15VC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021B-15VC is usually 5 days.

3.What payment methods are accepted for CY7C1021B-15VC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021B-15VC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1021B-15VC?

CY7C1021B-15VC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1021B-15VC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1021B-15VC?

For technical support, including CY7C1021B-15VC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021B-15VC requirements.

6.How does Aetrix verify that CY7C1021B-15VC is sourced from the original manufacturer or authorized distributors?

All CY7C1021B-15VC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021B-15VC meets industry standards.

7.What is the process for return or replacement of CY7C1021B-15VC?

All CY7C1021B-15VC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021B-15VC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1021B-15VC part is unused and in its original packaging.

Return procedure for CY7C1021B-15VC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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