Infineon Technologies CY7C1021B-15ZXCT

Overview

CY7C1021B-15ZXCT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 15 ns maximum access time, 5 V ±10% supply, industrial temperature range (–40°C to +85°C), and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/ BLE and is packaged in Pb-free 44-pin TSOP II for embedded control and data buffering applications.

For engineers reviewing the CY7C1021B-15ZXCT datasheet, CY7C1021B-15ZXCT pinout, CY7C1021B-15ZXCT application, or CY7C1021B-15ZXCT equivalent, key selection criteria include tAA = 15 ns read timing, ISB2 = 10 mA CMOS standby current, dual-byte enable architecture, and TSOP II footprint compatibility with legacy SRAM designs.

Technical Context

The CY7C1021B-15ZXCT implements a fully decoded 64K × 16 asynchronous SRAM array with separate byte write controls (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its TTL-compatible inputs and CMOS outputs support direct interfacing with microcontrollers and FPGAs.

Power management is handled via automatic CE-driven power-down: when CE is HIGH, ICC drops to ISB2 = 10 mA (CMOS input condition) or ISB1 = 40 mA (TTL input condition), while output drivers enter high-impedance state regardless of OE, WE, or BHE/ BLE status.

Key Specifications

Pinout & Package

44-pin TSOP Type II package (JEDEC MO-141AC), Pb-free, 0.8 mm lead pitch, 10.16 mm × 18.42 mm body size, 1.2 mm max height. Pin 1 index marked by notch or dot.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV1024-15K, CY7C1021B-15ZXCT offers lower standby current (10 mA vs. 25 mA) and TSOP II footprint savings; versus MC68HC11E9CP, it preserves design flexibility for external memory expansion and deterministic timing control.

Availability

CY7C1021B-15ZXCT is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, and medical imaging equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1021B-15ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable solutions for industrial, automotive, and consumer markets.

The CY7C1021B series was designed specifically for high-reliability, low-latency parallel SRAM applications in harsh-environment embedded systems where predictable timing and robust power management are essential.

FAQ

Is CY7C1021B-15ZXCT pin-compatible with CY7C1021B-12ZXCT?

Yes-both share identical 44-pin TSOP II pinout, address/data bus mapping, and control signal assignments. The only difference is guaranteed access time: 15 ns vs. 12 ns. Systems designed for 15 ns timing will operate reliably with the -12 variant, but not vice versa without timing margin verification.

Does CY7C1021B-15ZXCT support battery backup operation?

No-it lacks built-in battery-switching circuitry or VBAT pin. However, its 10 mA ISB2 standby current enables external battery-backed power schemes using discrete diodes and regulators, provided VCC remains within 4.5–5.5 V during backup mode.

Can BLE and BHE be asserted simultaneously for full 16-bit access?

Yes-asserting both BLE and BHE LOW enables concurrent access to all 16 I/O lines. The truth table confirms "Write - All bits" and "Read - All bits" modes occur when CE and OE (for read) or WE (for write) are active alongside both byte enables.

What is the maximum capacitive load the I/O pins can drive?

The datasheet specifies AC timing with 30 pF load (including jig and scope). Output drivers are rated for IOH = –4 mA / IOL = 8 mA at VCC = 5 V, supporting up to ~25 pF net load in typical PCB layouts before degrading tDOE (7 ns) or tHZOE (7 ns) parameters.