Infineon Technologies CY7C1021BL-15ZXIT

Overview

CY7C1021BL-15ZXIT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 15 ns maximum access time, 5 V ±10% supply, industrial temperature range (–40°C to +85°C), and automatic CE-controlled power-down. It supports independent byte write via BHE/ BLE and is packaged in Pb-free 44-pin TSOP II for embedded control and data buffering in industrial PLCs.

For engineers reviewing the CY7C1021BL-15ZXIT datasheet, CY7C1021BL-15ZXIT pinout, CY7C1021BL-15ZXIT application, or CY7C1021BL-15ZXIT equivalent, key selection criteria include tAA = 15 ns read timing, ISB2 = 10 mA standby current, dual-byte enable architecture, and TSOP II thermal resistance (ΘJA = 76.89°C/W).

Technical Context

The CY7C1021BL-15ZXIT implements a fully static 64K × 16 memory array with separate address decoding paths for row and column selection, enabling deterministic 15 ns address-to-data access. Its TTL/CMOS-compatible inputs support direct interfacing with microcontrollers and FPGAs without level-shifting.

Power management is handled through dual-tier automatic power-down: ISB1 (40 mA) activates when CE > VIH with TTL-level inputs, while ISB2 (10 mA) engages under CMOS conditions (CE > VCC – 0.3 V). Byte write control (BHE/BLE) allows partial-word updates without disturbing adjacent bytes.

Key Specifications

Pinout & Package

44-pin TSOP Type II package (JEDEC MO-141AC), 400-mil body width, 0.8 mm lead pitch, gull-wing leads. Thermal resistance ΘJA = 76.89°C/W, ΘJC = 14.28°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV102416AL-15TLI and AS6C1008-15PCN, the CY7C1021BL-15ZXIT uniquely combines 5 V compatibility, dual-byte write control, and sub-10 mA CMOS standby-making it optimal for retrofitting legacy 5 V industrial designs requiring minimal hardware change and deterministic low-power behavior.

Availability

CY7C1021BL-15ZXIT is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, medical imaging subsystems, and avionics display controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1021BL-15ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with emphasis on signal integrity and thermal robustness.

The CY7C1021B series targets legacy 5 V embedded systems needing pin-compatible, drop-in SRAM replacements with enhanced power management-specifically addressing industrial control, test equipment, and military-grade instrumentation.

FAQ

What is the maximum clock frequency supported by CY7C1021BL-15ZXIT?

The CY7C1021BL-15ZXIT is a static RAM and does not use a clock signal. Its timing is governed by asynchronous control signals (CE, OE, WE, BHE, BLE). The minimum read cycle time (tRC) is 15 ns, supporting effective data throughput up to approximately 66.7 MHz in burst-read configurations with proper address and control setup/hold margins.

Does CY7C1021BL-15ZXIT support true 16-bit concurrent read/write operations?

Yes-when both BHE and BLE are asserted LOW simultaneously, all 16 I/O lines (I/O1–I/O16) are active for full-word access. The device's internal architecture allows simultaneous read or write of the entire 16-bit word without internal serialization or cycle splitting.

Can CY7C1021BL-15ZXIT be operated at 3.3 V?

No-CY7C1021BL-15ZXIT is specified only for 5 V ±10% operation (4.5 V to 5.5 V). Applying 3.3 V violates the absolute maximum rating for VCC and will result in undefined behavior, failed reads/writes, and potential data corruption due to insufficient internal voltage margins.

How is the automatic power-down feature triggered and verified?

Automatic power-down activates when CE is driven HIGH while all inputs (A0–A15, WE, OE, BHE, BLE) remain within valid logic thresholds (VIH ≥ 2.2 V or VIL ≤ 0.8 V). ISB2 = 10 mA is measured under CMOS-compatible conditions (CE > VCC – 0.3 V), confirmed via DC current measurement at VCC pins with oscilloscope-triggered current probe during CE HIGH assertion.