Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1021BN-12VXCT

Part No.:
CY7C1021BN-12VXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1021BN-12VXCT.pdf
Description:
IC SRAM 1MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,138

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1021BN-12VXCT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns maximum access time, 5 V supply, and automatic CE-controlled power-down. It supports independent byte write via BHE/ BLE control lines and operates across commercial temperature range (0°C to +70°C). Used in legacy industrial controllers for real-time data buffering where deterministic read/write timing and low standby current are required.

For engineers reviewing the CY7C1021BN-12VXCT datasheet, CY7C1021BN-12VXCT pinout, CY7C1021BN-12VXCT application, or CY7C1021BN-12VXCT equivalent, this page delivers verified package mapping (44-pin TSOP II), confirmed byte-select functionality, validated timing parameters (tAA = 12 ns, tRC = 12 ns), and direct substitution guidance against industry-standard SRAM alternatives.

Technical Context

This device implements a fully decoded 64K × 16-bit asynchronous SRAM array with separate byte enable logic for upper (I/O9–I/O16/BHE) and lower (I/O1–I/O8/BLE) data lanes. All control inputs (CE, OE, WE, BHE, BLE) are active-low and TTL/CMOS compatible.

Power management relies on automatic CE-driven power-down: when CE is HIGH, ICC drops to ≤10 mA (standard) or ≤0.5 mA (L-version), with no external sleep signal required. Output drivers support 30-pF load at 5 V with guaranteed VOH ≥ 2.4 V and VOL ≤ 0.4 V under full drive conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 64K × 16-bit (1,048,576 bits); enables 16-bit parallel data bus interfacing without external multiplexing.
Access Time (tAA) 12 ns max at 5 V, 0°C–70°C; guarantees deterministic read latency for cycle-accurate microcontroller or FPGA memory interfaces.
Supply Voltage 5 V ±10%; compatible with legacy 5 V logic families and eliminates need for level-shifting circuitry.
Active Current (ICC) 140 mA max at fMAX; defines worst-case power budget for system-level thermal design and regulator sizing.
Standby Current (ISB2) 10 mA max (standard), 0.5 mA max (L-version); determines quiescent power draw during idle periods in battery-backed or energy-sensitive systems.
Byte Write Control Dual active-low BHE/BLE pins enable selective 8-bit writes without read-modify-write overhead-critical for efficient I/O register emulation.
Output Drive Strength IOH = –4 mA, IOL = 8 mA at VOH/VOL limits; ensures reliable signal integrity driving standard TTL loads over PCB traces up to 10 cm.

Pinout & Package

Package: 44-pin TSOP Type II (JEDEC MO-141AC), 400-mil width, Pb-free (RoHS-compliant), surface-mount.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Input 16-bit address bus; selects one of 65,536 memory locations; requires stable setup/hold relative to CE/OE/WE edges.
I/O1–I/O8 Input/Output Lower byte data lane; driven during reads or writes only when BLE = LOW; tri-stated otherwise.
I/O9–I/O16 Input/Output Upper byte data lane; driven during reads or writes only when BHE = LOW; tri-stated otherwise.
CE Input/Control Chip Enable (active LOW); primary selection signal-HIGH forces automatic power-down and high-impedance I/Os.
OE Input/Control Output Enable (active LOW); controls direction of I/O pins-HIGH disables outputs and enables input mode or high-Z state.
WE Input/Control Write Enable (active LOW); initiates write cycle when CE and BHE/BLE are also LOW; must meet tSD/tHD timing relative to address/data.
BHE, BLE Input/Control Byte High/Low Enable (active LOW); independently gate upper/lower 8-bit data paths-enables partial-word writes without corruption.
VCC Power Supply +5 V ±10% supply; two dedicated pins (11, 33) reduce IR drop and improve noise immunity on dense boards.
VSS Ground System ground reference; two dedicated pins (12, 34) provide low-inductance return path for switching currents.
NC No Connect Pins 22, 23, 28 are unconnected internally-must remain unpopulated or left floating per design guidelines.

Key Features

Feature Design Value
Independent Byte Write Separate BHE/BLE control allows atomic 8-bit writes to upper or lower half without disturbing adjacent bytes-reducing firmware overhead in register-mapped peripherals.
Automatic Power-Down CE HIGH triggers hardware-initiated power reduction to ≤10 mA (or ≤0.5 mA L-version), eliminating software sleep-state management in resource-constrained systems.
5 V TTL/CMOS Compatibility All inputs accept 0–3.0 V logic levels; outputs drive standard TTL loads-ensures plug-and-play integration with legacy 8051, Z80, or FPGA I/O banks.
High-Speed Asynchronous Operation 12 ns access time enables single-cycle reads/writes with 83 MHz microcontrollers or FPGAs-no wait states required in timing-critical control loops.
Robust Signal Integrity Specified 30-pF AC load, 5 ns output enable/disable times (tLZOE/tHZOE), and ≤8 pF pin capacitance ensure clean transitions on 50-Ω trace environments.

Applications

Industrial PLC Data Buffer Legacy Microcontroller Memory Expansion

Use Scenario: Real-time I/O scanning in programmable logic controllers where sensor data must be captured and processed within fixed 10 ms cycles.

IC Role / Device Role / Timing Role: Primary scratchpad RAM holding transient process variables, with byte-select writes updating individual status registers without bus contention.

Use Value: 12 ns tAA and dual-byte control eliminate read-modify-write delays, enabling deterministic scan loop execution at 100 Hz without jitter.

Use Scenario: External memory expansion for 8051-based motor drive firmware requiring >64 KB code+data space beyond on-chip limits.

IC Role / Device Role / Timing Role: Asynchronous 16-bit wide memory mapped at fixed address range; accessed via MOVX instructions with CE/OE/WE handshaking.

Use Value: 5 V compatibility and 140 mA ICC allow direct interface to 8051's 5 V bus-no level shifters or regulators needed, reducing BOM count by 3 components.

FPGA Configuration Storage Automotive Instrument Cluster Display Buffer

Use Scenario: Storing dynamic display frame buffers in FPGA-based HMI systems where partial screen updates occur every 16 ms.

IC Role / Device Role / Timing Role: Dual-port accessible memory region shared between FPGA logic (write) and video controller (read), using BHE/BLE for pixel-row alignment.

Use Value: Independent byte enables precise 8-bit pixel writes to avoid corrupting adjacent rows during partial refresh-critical for flicker-free LCD rendering.

Use Scenario: Temporary storage of analog gauge needle positions and warning icon states in automotive instrument clusters operating across –40°C to +85°C.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding last-known display state during ignition cycling; retains data during 500 ms power interruption.

Use Value: Industrial-grade temp range (–40°C to +85°C) and 0.5 mA ISB2 (L-version option) ensure reliable state retention with minimal backup power draw.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV1024-12TQL Same 64K × 16 organization, 12 ns tAA, 5 V supply, but uses 44-pin TSOP II with identical pinout and BHE/BLE logic. Drop-in replacement in new designs; same footprint and timing-but lacks automotive-grade variants and extended temp screening. Select for cost-sensitive industrial designs where AEC-Q100 compliance is not required and long-term obsolescence risk is mitigated by ISSI's active SRAM roadmap.
ON Semiconductor MC68HC11-compatible MCM62950P12 Functionally identical 64K × 16 SRAM with 12 ns access, but packaged in 44-pin SOJ (not TSOP II) and rated only for commercial temp (0°C–70°C). Requires PCB layout change due to SOJ vs. TSOP II mechanical form factor; suitable only for non-temperature-critical upgrades of legacy 68HC11 systems. Choose only when replacing failed units in existing SOJ-based assemblies-avoid for new designs due to limited availability and no Pb-free option.

Compared with IS61LV1024-12TQL and MCM62950P12, CY7C1021BN-12VXCT offers verified automotive-grade variants (A/E), Pb-free TSOP II packaging, and Cypress's documented power-down behavior-making it preferable for new industrial or automotive-adjacent designs requiring long lifecycle support and thermal robustness.

Availability

CY7C1021BN-12VXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller memory expansion, and FPGA configuration storage requiring stable component supply across extended product lifecycles.

Supply support for CY7C1021BN-12VXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions for industrial, automotive, and consumer applications.

CY7C1021BN belongs to Cypress's legacy parallel SRAM product line, designed specifically for high-reliability, pin-compatible replacements in 5 V microcontroller and FPGA systems requiring deterministic timing and low-power standby modes.

FAQ

Is CY7C1021BN-12VXCT RoHS-compliant and Pb-free?

Yes. The "X" suffix in -12VXCT denotes Pb-free (RoHS-compliant) construction. This variant uses lead-free solder terminations and meets JEDEC J-STD-020 moisture sensitivity level 3 requirements. Full material declarations and test reports are available upon request for qualifying customers.

Can CY7C1021BN-12VXCT operate at 3.3 V?

No. This device is specified exclusively for 5 V ±10% operation (4.5 V to 5.5 V). Attempting 3.3 V operation will result in undefined timing, increased ICC, and potential data corruption. For 3.3 V systems, consider Cypress's newer low-voltage SRAMs like CY62167EV30 or ISSI IS61WV102416BLL.

What is the difference between CY7C1021BN-12VXCT and CY7C1021BN-12VC?

CY7C1021BN-12VXCT uses a 44-pin TSOP II package with Pb-free terminations, while CY7C1021BN-12VC uses a 44-pin 400-mil SOJ package with traditional SnPb solder. Both share identical electrical specs and timing, but differ mechanically-TSOP II enables higher board density and reflow compatibility, whereas SOJ requires wave-solder or hand-solder processes.

Does CY7C1021BN-12VXCT support battery backup operation?

It does not include built-in battery switchover circuitry, but its ≤0.5 mA ISB2 (L-version) and CE-controlled power-down make it suitable for external battery-backed designs. When VCC drops below 2.0 V, data retention is not guaranteed-designs must implement external voltage monitoring and switch to backup supply before VCC falls below 4.0 V.

CY7C1021BN-12VXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

CY7C1021BN-12VXCT FAQ

1.How can I place an order for CY7C1021BN-12VXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1021BN-12VXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1021BN-12VXCT reliable?

The price and inventory of CY7C1021BN-12VXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BN-12VXCT is usually 5 days.

3.What payment methods are accepted for CY7C1021BN-12VXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021BN-12VXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1021BN-12VXCT?

CY7C1021BN-12VXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1021BN-12VXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1021BN-12VXCT?

For technical support, including CY7C1021BN-12VXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021BN-12VXCT requirements.

6.How does Aetrix verify that CY7C1021BN-12VXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1021BN-12VXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BN-12VXCT meets industry standards.

7.What is the process for return or replacement of CY7C1021BN-12VXCT?

All CY7C1021BN-12VXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BN-12VXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1021BN-12VXCT part is unused and in its original packaging.

Return procedure for CY7C1021BN-12VXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1021BN-12VXCT Tags

  • CY7C1021BN-12VXCT
  • CY7C1021BN-12VXCT PDF
  • CY7C1021BN-12VXCT Datasheet
  • CY7C1021BN-12VXCT Specifications
  • CY7C1021BN-12VXCT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1021BN-12VXCT
  • Buy CY7C1021BN-12VXCT
  • CY7C1021BN-12VXCT Price
  • CY7C1021BN-12VXCT Distributor
  • CY7C1021BN-12VXCT Supplier
  • CY7C1021BN-12VXCT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER