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Infineon Technologies CY7C1021BN-12ZXCT

Part No.:
CY7C1021BN-12ZXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1021BN-12ZXCT.pdf
Description:
IC SRAM 1MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,640

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Product details

Overview

CY7C1021BN-12ZXCT from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 15 ns access time, industrial temperature range (–40 °C to +85 °C), 5 V ±10% supply, and automatic CE-controlled power-down mode. It supports independent byte-wide write enable via BHE/ BLE and operates in standard 44-pin TSOP II package for embedded memory buffering in real-time control systems.

For engineers reviewing the CY7C1021BN-12ZXCT datasheet, CY7C1021BN-12ZXCT pinout, CY7C1021BN-12ZXCT application, or CY7C1021BN-12ZXCT equivalent, key selection criteria include tAA ≤ 15 ns, ISB2 ≤ 10 mA (CMOS standby), dual-byte I/O control, and TSOP II thermal resistance (θJA = 76.89 °C/W) for thermally constrained PCB layouts.

Technical Context

The CY7C1021BN-12ZXCT implements a 65,536 × 16-bit asynchronous SRAM array with separate byte-enable logic for upper (I/O9–I/O16, BHE) and lower (I/O1–I/O8, BLE) data lanes. Its read/write timing is fully controlled by CE, OE, and WE with no internal clock or refresh requirement.

Power management relies on automatic CE-driven transition between active (ICC ≤ 130 mA) and standby (ISB2 ≤ 10 mA) states. Input thresholds meet TTL-compatible VIH ≥ 2.2 V and VIL ≤ 0.8 V, while output drive complies with VOH ≥ 2.4 V at –4 mA and VOL ≤ 0.4 V at 8 mA.

Key Specifications

Parameter Value and Actual Design Meaning
tAA 15 ns maximum - guarantees data valid within 15 ns of address stabilization, enabling tight timing closure in 66 MHz bus interfaces.
ICC (max) 130 mA at fMAX - defines worst-case active power draw (≤ 650 mW at 5 V), critical for thermal budgeting in sealed enclosures.
ISB2 (max) 10 mA - CMOS-input standby current when CE HIGH and inputs biased beyond VCC–0.3 V or < 0.3 V, enabling low-power sleep modes.
VCC Range 5 V ±10% - requires stable 4.5–5.5 V rail; not compatible with 3.3 V or mixed-voltage I/O domains without level translation.
Capacitance CIN/COUT = 8 pF - limits trace length and fanout in high-speed parallel buses; supports ≤ 10 cm routing without signal integrity degradation.
θJA 76.89 °C/W (TSOP II) - determines junction temperature rise under continuous operation; mandates ≥ 250 mm² copper pour for >100 mW dissipation.

Pinout & Package

Package: 44-pin TSOP II (400-mil width), surface-mount, JEDEC MO-141AC compliant, with exposed pad not connected.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address input 16-bit row/column select lines; A0–A15 fully decoded to access all 65,536 words without external logic.
I/O1–I/O8 Bidirectional data (lower byte) Driven or latched only when BLE = LOW; tristated otherwise - enables 8-bit subsystem interfacing without glue logic.
I/O9–I/O16 Bidirectional data (upper byte) Driven or latched only when BHE = LOW; independent of BLE - supports interleaved 16-bit writes or split-bus architectures.
CE Chip enable (active LOW) Primary device select; forces automatic power-down when HIGH, reducing ICC to ISB2 level without software intervention.
WE Write enable (active LOW) Controls write initiation; must be LOW concurrently with CE and BHE/ BLE to store data - prevents accidental writes during bus contention.
OE Output enable (active LOW) Enables output drivers only when LOW and CE LOW; HIGH places I/O pins in high-Z state - essential for shared data bus arbitration.
BHE / BLE Byte enable (active LOW) Independent gating of upper/lower data bytes; allows partial-word writes without read-modify-write cycles.
VCC (Pins 11, 33) Power supply Dual VCC pins reduce IR drop and improve noise immunity across wide TSOP body; require local 0.1 µF decoupling each.
VSS (Pins 12, 34) Ground Dual ground pins provide low-inductance return path; must connect to solid ground plane beneath package footprint.

Key Features

Feature Design Value
Independent byte write control Enables 8-bit microcontroller interfacing to 16-bit memory without external latch or multiplexer logic.
Automatic CE power-down Reduces standby current to ≤10 mA without requiring external power sequencing or firmware control.
15 ns access time (tAA) Supports direct connection to 66 MHz CPU buses with zero wait states in synchronous read cycles.
Industrial temperature range Validated operation from –40 °C to +85 °C ensures reliability in factory automation and transportation electronics.
44-pin TSOP II packaging Standardized footprint enables drop-in replacement and compatibility with automated SMT assembly lines.

Applications

Industrial PLC Data Buffering Automotive Engine Control Unit (ECU) Log Memory

Use Scenario: Storing real-time sensor samples and diagnostic codes in programmable logic controllers with deterministic interrupt latency.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between ARM Cortex-M4 core and CAN/FlexRay peripherals, providing zero-wait-state access for timestamped event logging.

Use Value: 15 ns tAA ensures sub-100 ns memory response, meeting IEC 61131-3 cycle-time requirements for safety-critical motion control loops.

Use Scenario: Capturing misfire events and OBD-II fault snapshots during engine cranking and transient load conditions.

IC Role / Device Role / Timing Role: Non-refresh volatile storage for post-ignition diagnostics, retaining data across ignition cycles until retrieved via UDS protocol.

Use Value: Industrial-grade –40 °C to +85 °C operation and 10 mA ISB2 guarantee reliable logging even after extended vehicle shutdown in extreme ambient conditions.

Medical Imaging Frame Buffer Avionics Display System Cache

Use Scenario: Holding intermediate pixel data during real-time ultrasound beamforming and Doppler processing pipelines.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM accessed simultaneously by FPGA-based beamformer and ARM-based UI processor via time-multiplexed address bus.

Use Value: Independent BHE/ BLE control allows concurrent 8-bit UI updates and 16-bit image streaming without bus contention or arbitration logic.

Use Scenario: Caching navigation map tiles and synthetic vision terrain data in certified cockpit display units (DO-178C Level A).

IC Role / Device Role / Timing Role: High-reliability memory node in ARINC 661-compliant graphics pipeline, operating under DO-254 hardware assurance constraints.

Use Value: TSOP II package with θJA = 76.89 °C/W enables conduction-cooled mounting on aluminum chassis, satisfying EASA CS-25 thermal derating requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS6C1008-15TIN 1-Mbit (128K × 8), 15 ns tAA, single-byte interface, 3.3 V only Requires external byte-width adaptation for 16-bit systems; incompatible with 5 V buses Select only when migrating to 3.3 V architecture and redesigning address/data bus width.
IS61LV102416-12TL 1-Mbit (64K × 16), 12 ns tAA, 3.3 V supply, LVTTL I/O Lower access time but incompatible voltage domain; needs level shifters for 5 V MCU interfacing Prefer for new 3.3 V designs where timing margin is critical and voltage translation is acceptable.

Compared with AS6C1008-15TIN and IS61LV102416-12TL, CY7C1021BN-12ZXCT uniquely supports native 5 V operation with dual-byte control and industrial temperature rating - eliminating level shifters and simplifying qualification for legacy 5 V embedded systems.

Availability

CY7C1021BN-12ZXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ECU log memory, medical imaging frame buffering, and avionics display system cache requiring stable component supply across extended product lifecycles.

Supply support for CY7C1021BN-12ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and aerospace applications.

CY7C1021BN belongs to Cypress's legacy parallel SRAM product line, engineered for deterministic, low-latency data storage in resource-constrained real-time systems without refresh overhead.

FAQ

Is CY7C1021BN-12ZXCT compatible with 3.3 V I/O interfaces?

No. CY7C1021BN-12ZXCT requires 5 V ±10% supply and features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V). Direct connection to 3.3 V logic violates VOH/VOL specifications and risks data corruption. Level translation circuitry is mandatory for mixed-voltage systems.

What is the maximum sustained operating frequency supported by CY7C1021BN-12ZXCT?

The device has no internal clock and operates asynchronously. Its maximum usable bus frequency is determined by tRC = 15 ns, supporting up to 66.7 MHz continuous read/write cycling when address and control signals meet setup/hold timing. Real-world throughput depends on bus protocol overhead and controller capability.

Does CY7C1021BN-12ZXCT require an external refresh controller?

No. As a static RAM, CY7C1021BN-12ZXCT retains data indefinitely while powered and selected, with no refresh cycles needed. This eliminates refresh-related timing jitter and simplifies system design versus DRAM-based solutions.

How does the automatic power-down feature behave during partial byte writes?

Automatic power-down activates only when CE is HIGH, regardless of BHE/ BLE or WE state. During partial byte writes (e.g., BLE LOW, BHE HIGH), CE remains LOW so the device stays in active mode. Power-down occurs exclusively on chip deselect, not byte-select transitions.

CY7C1021BN-12ZXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1021BN-12ZXCT FAQ

1.How can I place an order for CY7C1021BN-12ZXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1021BN-12ZXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1021BN-12ZXCT reliable?

The price and inventory of CY7C1021BN-12ZXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BN-12ZXCT is usually 5 days.

3.What payment methods are accepted for CY7C1021BN-12ZXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021BN-12ZXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1021BN-12ZXCT?

CY7C1021BN-12ZXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1021BN-12ZXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1021BN-12ZXCT?

For technical support, including CY7C1021BN-12ZXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021BN-12ZXCT requirements.

6.How does Aetrix verify that CY7C1021BN-12ZXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1021BN-12ZXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BN-12ZXCT meets industry standards.

7.What is the process for return or replacement of CY7C1021BN-12ZXCT?

All CY7C1021BN-12ZXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BN-12ZXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1021BN-12ZXCT part is unused and in its original packaging.

Return procedure for CY7C1021BN-12ZXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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