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Infineon Technologies CY7C1021BN-15VXC

Part No.:
CY7C1021BN-15VXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1021BN-15VXC.pdf
Description:
IC SRAM 1MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,896

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Product details

Overview

CY7C1021BN-15VXC from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 15 ns maximum access time, 5 V supply, and automatic CE-controlled power-down. It supports independent byte write via BHE/ BLE control, operates across commercial temperature range (0°C to +70°C), and is packaged in Pb-free 44-pin SOJ. Used in legacy industrial controllers for nonvolatile data buffering during processor handshaking.

For engineers reviewing the CY7C1021BN-15VXC datasheet, CY7C1021BN-15VXC pinout, CY7C1021BN-15VXC application, or CY7C1021BN-15VXC equivalent, key selection criteria include tAA ≤ 15 ns, ISB2 ≤ 10 mA standby current, byte-select capability, SOJ package compatibility, and 5 V single-supply operation in space-constrained embedded systems.

Technical Context

This SRAM implements a synchronous, address-decoded 65,536 × 16-bit memory array with dual-byte write enable logic (BHE/BLE active-Low), TTL/CMOS-compatible inputs, and three-state bidirectional I/Os (I/O1–I/O16). Read/write cycles are controlled by CE, OE, and WE with defined setup/hold timing relative to address and control edges.

Power management relies on automatic CE-driven power-down: when CE is HIGH, ICC drops to ISB2 = 10 mA (max) at VCC = 5 V, with no external control required. The device uses standard CMOS process technology and supports both SOJ and TSOP-II footprints without functional differentiation between packages.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 64K × 16 bits - provides 128 KB of fast random-access storage with full 16-bit parallel data bus interface.
Access Time (tAA) 15 ns max - guarantees data valid within 15 ns after address stabilization, enabling integration with 66 MHz system buses.
Supply Voltage 5 V ±10% - compatible with legacy 5 V logic families and eliminates need for level-shifting in older microcontroller designs.
Standby Current (ISB2) 10 mA max - enables low-power hold mode during CPU idle cycles without external power gating circuitry.
Operating Temperature 0°C to +70°C - validated for commercial-grade industrial automation equipment where extended thermal cycling is not required.
I/O Drive Strength VOL = 0.4 V @ 8 mA, VOH = 2.4 V @ –4 mA - ensures robust noise margin and reliable interfacing with 74LS/TTL and CMOS logic.
Byte Write Control BHE and BLE inputs - allow independent 8-bit writes to upper/lower bytes, reducing bus contention in multiprocessor shared-memory systems.

Pinout & Package

Package: 44-pin 400-mil-wide molded SOJ (Small Outline J-lead), Pb-free, JEDEC MS-024AC compliant. Body width 0.400 inch ±0.010 inch; lead pitch 0.050 inch; lead coplanarity ≤0.004 inch.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address Input 16-bit address bus input; selects one of 65,536 memory locations; TTL/CMOS compatible.
I/O1–I/O8 Bidirectional Data (Lower Byte) 8-bit data path for lower byte; tri-stated when BLE = HIGH or CE = HIGH or OE = HIGH.
I/O9–I/O16 Bidirectional Data (Upper Byte) 8-bit data path for upper byte; tri-stated when BHE = HIGH or CE = HIGH or OE = HIGH.
CE Chip Enable Active-Low chip select; enables memory access and controls automatic power-down when deasserted.
WE Write Enable Active-Low write strobe; initiates write cycle when CE and WE both LOW; determines read vs. write mode with OE.
OE Output Enable Active-Low output control; enables data output drivers only during read operations; forces I/Os to high-Z when HIGH.
BLE Byte Low Enable Active-Low control for lower byte (I/O1–I/O8); allows partial writes without disturbing upper byte contents.
BHE Byte High Enable Active-Low control for upper byte (I/O9–I/O16); enables selective update of high-order data in shared-bus systems.
VCC Power Supply +5 V ±10% main supply; two pins (11, 33) provide low-inductance connection and reduce IR drop.
VSS Ground System ground reference; two pins (12, 34) ensure stable return path and minimize ground bounce.
NC No Connect Pins 22, 23, 28 - physically present but unconnected to die; must remain floating or tied to GND per layout guidelines.

Key Features

Feature Design Value
Automatic CE Power-Down Reduces ICC from 130 mA (active) to 10 mA (standby) without external logic or clock gating-critical for battery-backed systems.
Independent Byte Write Enables concurrent access to upper/lower 8-bit lanes via separate BHE/BLE controls-eliminates need for external byte-masking logic.
Tri-State Output Drivers I/O pins enter high-impedance state under four conditions: CE HIGH, OE HIGH, BHE/BLE HIGH, or WE LOW-prevents bus contention during mixed-mode operation.
Low Capacitance I/O CIN/COUT = 8 pF max-minimizes signal integrity degradation and reduces trace termination requirements in high-density PCB layouts.
Pb-Free Packaging RoHS-compliant 44-pin SOJ (VXC suffix)-meets environmental compliance mandates for industrial OEM production without solderability trade-offs.

Applications

Industrial PLC Data Buffering Legacy Microcontroller Memory Expansion

Use Scenario: Real-time I/O scan cycle in programmable logic controllers requires temporary storage of sensor inputs and actuator outputs between scan intervals.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding intermediate process values; accessed synchronously with 68K or 8051-family CPUs at ≤66 MHz bus rates.

Use Value: 15 ns tAA ensures deterministic response within tight scan windows; byte-write capability isolates analog input updates from digital output writes.

Use Scenario: Adding external program/data memory to 8-bit microcontrollers with limited on-chip RAM, such as Intel 80C51 or Motorola 68HC11 derivatives.

IC Role / Device Role / Timing Role: Parallel memory-mapped expansion device sharing address/data bus; selected via dedicated CS decoder logic.

Use Value: Dual-byte write support simplifies firmware routines handling 16-bit variables; 5 V compatibility avoids level-shifter components.

Automotive Instrument Cluster Display Cache Medical Diagnostic Equipment Bootloader Storage

Use Scenario: Storing transient display frame buffers and configuration registers in analog-digital hybrid instrument clusters operating in passenger compartments.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory for LCD controller co-processor; retains calibration data during ignition cycling.

Use Value: Commercial-grade temperature range suffices for cabin environments; automatic power-down extends battery life during vehicle sleep modes.

Use Scenario: Holding secure bootloader code and cryptographic keys during cold boot sequence in Class II medical imaging devices with strict firmware validation.

IC Role / Device Role / Timing Role: Secure, tamper-resistant memory segment isolated from main application RAM; accessed only during verified boot phase.

Use Value: Low standby current (10 mA) minimizes energy draw during long idle periods; Pb-free packaging meets IEC 60601-1 safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV1024-15KLI 1-Mbit (64K × 16), 15 ns, 3.3 V supply, 44-pin TSOP-II - lacks byte-enable pins and CE power-down logic. Requires external power management and byte masking; suitable only for 3.3 V systems with simplified control. Select if migrating to lower-voltage design and accepting added board-level complexity for byte control.
AS6C1008-15PCN 1-Mbit (128K × 8), 15 ns, 5 V, 32-pin SOJ - narrower 8-bit bus, no BHE/BLE, higher standby current (25 mA). Needs bus-width adaptation (two chips for 16-bit interface); less efficient for byte-granular writes. Choose only when footprint constraints force 32-pin SOJ use and 8-bit data path is acceptable.

Compared with IS61LV1024-15KLI and AS6C1008-15PCN, CY7C1021BN-15VXC uniquely delivers 5 V compatibility, integrated byte write control, and zero-overhead power-down-making it irreplaceable in legacy 16-bit bus designs requiring minimal external logic.

Availability

CY7C1021BN-15VXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller memory expansion, automotive instrument cluster display caching, and medical diagnostic equipment bootloader storage requiring stable component supply across multi-year production cycles.

Supply support for CY7C1021BN-15VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, USB, and timing solutions for industrial, automotive, and consumer electronics.

CY7C1021BN belongs to Cypress's legacy parallel SRAM product line, designed specifically for pin-compatible replacement of aging 2K×8 and 8K×8 SRAMs in 5 V embedded systems requiring predictable timing and robust bus interfacing.

FAQ

Is CY7C1021BN-15VXC compatible with 3.3 V logic interfaces?

No. This device requires a 5 V ±10% supply and features TTL/CMOS input thresholds referenced to 5 V (VIH ≥ 2.2 V, VIL ≤ 0.8 V). Direct connection to 3.3 V logic may cause unreliable operation or excessive input leakage. Level-shifting circuitry is mandatory for mixed-voltage systems.

Does CY7C1021BN-15VXC support asynchronous burst reads?

No. It is a static RAM with purely asynchronous timing-each read or write cycle requires explicit assertion of CE, OE (for reads), and WE (for writes). There is no internal address counter, burst mode, or clock input; all operations are controlled by edge-sensitive control signals.

What is the function of NC pins 22, 23, and 28?

These pins are physically present but electrically unconnected to the silicon die. They must be left floating or tied to ground per Cypress layout recommendations (Document #001-06494, Page 3). Connecting them to VCC or driving them may cause mechanical stress or unintended coupling in high-frequency layouts.

Can CY7C1021BN-15VXC replace CY7C1021BN-12VC in an existing design?

Yes, with timing impact: the -15VXC has 15 ns access time versus 12 ns for the -12VC, increasing worst-case read latency by 3 ns. System timing margins must be re-verified, especially in tightly constrained 66 MHz bus environments. All other electrical and pinout characteristics are identical.

CY7C1021BN-15VXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

CY7C1021BN-15VXC FAQ

1.How can I place an order for CY7C1021BN-15VXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1021BN-15VXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1021BN-15VXC reliable?

The price and inventory of CY7C1021BN-15VXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BN-15VXC is usually 5 days.

3.What payment methods are accepted for CY7C1021BN-15VXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021BN-15VXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1021BN-15VXC?

CY7C1021BN-15VXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1021BN-15VXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1021BN-15VXC?

For technical support, including CY7C1021BN-15VXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021BN-15VXC requirements.

6.How does Aetrix verify that CY7C1021BN-15VXC is sourced from the original manufacturer or authorized distributors?

All CY7C1021BN-15VXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BN-15VXC meets industry standards.

7.What is the process for return or replacement of CY7C1021BN-15VXC?

All CY7C1021BN-15VXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BN-15VXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1021BN-15VXC part is unused and in its original packaging.

Return procedure for CY7C1021BN-15VXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1021BN-15VXC Tags

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