My Inquiry
My Account
Infineon Technologies CY7C1021BN-15VXET
- Part No.:
- CY7C1021BN-15VXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021BN-15VXET.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,976
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1021BN-15VXET from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 15 ns access time, industrial temperature range (–40 °C to +85 °C), 5 V ±10% supply, and automatic CE-controlled power-down mode. It supports independent byte-wide writes via BHE/ BLE and operates in 44-pin TSOP II package for embedded memory buffering in real-time control systems.
For engineers reviewing the CY7C1021BN-15VXET datasheet, CY7C1021BN-15VXET pinout, CY7C1021BN-15VXET application, or CY7C1021BN-15VXET equivalent, key selection criteria include tAA = 15 ns read timing, dual-byte enable architecture, CMOS-compatible I/O levels, and automotive-grade thermal performance up to 85 °C ambient.
Technical Context
The CY7C1021BN-15VXET implements a synchronous, non-volatile-independent SRAM array organized as 65,536 × 16 bits with full address decoding (A0–A15). Its read/write control logic uses active-low CE, WE, OE, BHE, and BLE signals to manage data flow across two independent 8-bit I/O ports (I/O1–I/O8 and I/O9–I/O16).
Power management is handled by automatic CE-driven power-down: when CE is HIGH, ICC drops to ≤10 mA (ISB2) under CMOS input conditions. The device maintains TTL-compatible output drive (IOL = 8.0 mA, IOH = –4.0 mA) and meets JEDEC JESD22-A114 ESD rating (>2001 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 64 K × 16-bit (1 Mbit) - provides 128 KB of fast, non-refreshing data storage for firmware buffers or real-time FIFOs. |
| Access time (tAA) | 15 ns max - enables direct interface with 66 MHz microcontrollers without wait states. |
| Supply voltage | 5 V ±10% - compatible with legacy 5 V logic families and mixed-voltage system backplanes. |
| Operating temperature | –40 °C to +85 °C - qualified for industrial automation and motor control environments. |
| Standby current (ISB2) | 10 mA max (CMOS inputs) - reduces idle power in battery-backed or energy-sensitive applications. |
| I/O drive strength | IOL = 8.0 mA / IOH = –4.0 mA - ensures robust signal integrity across 10 cm PCB traces at 5 V. |
| Input capacitance | 8 pF - minimizes loading on address/data bus drivers in high-density memory subsystems. |
Pinout & Package
Package: 44-pin TSOP II (10.16 mm × 20.95 mm, 0.8 mm pitch), RoHS-compliant, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address inputs | 16-bit address bus interface; selects one of 65,536 memory locations. |
| I/O1–I/O8 | Data I/O (low byte) | Bidirectional 8-bit data path enabled by BLE LOW; isolated during high-Z states. |
| I/O9–I/O16 | Data I/O (high byte) | Bidirectional 8-bit data path enabled by BHE LOW; independently controllable from low byte. |
| CE | Chip enable | Active-LOW global select; forces automatic power-down when HIGH. |
| WE | Write enable | Active-LOW write strobe; initiates write cycle when CE and BLE/BHE are also LOW. |
| OE | Output enable | Active-LOW output gate; controls tristate behavior of I/O pins during reads. |
| BLE / BHE | Byte enable (low/high) | Independent active-LOW enables for low/high byte writes; enables partial-word updates. |
| VCC (pins 11, 33) | Power supply | 5 V ±10% main supply; decoupling required within 1 cm of each pin. |
| VSS (pins 12, 34) | Ground | Dual ground connections reduce ground bounce in high-speed burst accesses. |
Key Features
| Feature | Design Value |
|---|---|
| Independent byte write control | Separate BHE and BLE inputs allow simultaneous or selective update of high/low 8-bit bytes without read-modify-write overhead. |
| Automatic CE power-down | Reduces ICC to ≤10 mA when CE is HIGH, eliminating need for external power gating in intermittent-access systems. |
| High noise immunity | VIH = 2.2 V min / VIL = 0.8 V max ensures reliable operation in electrically noisy industrial enclosures. |
| Low output skew | tHZOE = 7 ns and tLZOE = 0 ns guarantee tight timing alignment between byte-enable and data valid windows. |
| Thermal reliability | θJA = 76.89 °C/W (TSOP II) supports sustained 130 mA ICC operation at +85 °C ambient with standard PCB copper pour. |
Applications
| Industrial PLC Data Buffer | Automotive Engine Control Unit (ECU) |
|---|---|
Use Scenario: Storing real-time sensor fusion results and actuator command queues in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed parallel SRAM serving as dual-port buffer between ARM Cortex-M7 core and FPGA-based I/O engine. Use Value: 15 ns tAA eliminates wait states during 66 MHz bus bursts, enabling sub-10 µs I/O response latency. | Use Scenario: Holding calibrated lookup tables and transient diagnostic logs in gasoline direct injection ECUs operating under under-hood thermal stress. IC Role / Device Role / Timing Role: Non-volatile-independent memory for rapid table indexing and fault-code timestamping during CAN message arbitration. Use Value: –40 °C to +85 °C qualification and 10 mA ISB2 ensure uninterrupted operation during cold cranking and hot soak conditions. |
| Medical Imaging Frame Store | Avionics Display Processor Cache |
Use Scenario: Temporary storage of uncompressed 12-bit X-ray detector frames prior to JPEG-LS compression in portable radiography units. IC Role / Device Role / Timing Role: Dual-byte-access SRAM interfacing directly to 16-bit image sensor parallel output bus. Use Value: Independent BHE/ BLE control allows pixel-pair packing into high/low bytes, doubling effective bandwidth over single-byte interfaces. | Use Scenario: Caching HUD symbology glyphs and flight parameter overlays in certified cockpit display generators with DO-254 compliance requirements. IC Role / Device Role / Timing Role: Deterministic-access memory supporting triple-buffered raster scan output at 60 Hz with zero frame tearing. Use Value: tPD = 15 ns and tPU = 0 ns guarantee predictable power-up/down transitions critical for fail-safe display recovery sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-15TIN | Same 64 K × 16 organization, 15 ns tAA, but uses 32-pin SOJ; no BHE/ BLE - single 16-bit bus only. | Lacks byte-select capability; requires external logic for partial writes. | Select when board space is constrained and byte-level granularity is unnecessary. |
| IS61LV102416-15TQLI | 15 ns tAA, 3.3 V supply only; different pinout (48-pin TQFP); supports LVTTL I/O. | Not 5 V tolerant; incompatible with legacy 5 V microcontroller buses. | Select only in new 3.3 V designs with FPGA or ARM SoC host interfaces. |
Compared with AS6C1008-15TIN and IS61LV102416-15TQLI, the CY7C1021BN-15VXET uniquely delivers 5 V compatibility, true dual-byte control, and industrial temperature support in a widely adopted 44-pin TSOP II footprint-making it optimal for retrofitting legacy 5 V systems requiring partial-word writes.
Availability
CY7C1021BN-15VXET is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ECU calibration storage, and medical imaging frame stores requiring stable component supply across extended product lifecycles.
Supply support for CY7C1021BN-15VXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial and automotive markets.
The CY7C1021BN series was designed specifically for high-reliability, 5 V parallel SRAM applications demanding deterministic timing, low standby power, and extended temperature operation in mission-critical embedded systems.
FAQ
Is CY7C1021BN-15VXET compatible with 3.3 V I/O interfaces?
No. The CY7C1021BN-15VXET is specified only for 5 V ±10% operation. Its VIH minimum is 2.2 V and VIL maximum is 0.8 V, which do not meet standard 3.3 V LVTTL thresholds. Interfacing with 3.3 V logic requires level-shifting circuitry on all address, data, and control lines.
What is the maximum clock frequency supported for burst read operations?
The device does not use a clock; it is asynchronous. Maximum effective throughput is determined by tRC = 15 ns, enabling up to 66.7 MHz sustained read cycles. For continuous burst access, address setup (tSA = 0 ns) and hold (tHA = 0 ns) times allow pipelined addressing without gaps between consecutive reads.
Does CY7C1021BN-15VXET support battery backup operation?
It does not include built-in battery-switching circuitry. However, its ISB2 ≤10 mA at VCC = 5 V and CE HIGH enables external battery backup using a diode-OR circuit and low-quiescent LDO. Data retention depends on maintaining VCC ≥2.0 V, per Cypress's minimum functional voltage specification.
How are NC pins (22, 23, 28) handled in PCB layout?
Pins 22, 23, and 28 are No Connect and must remain unconnected on the PCB. They are not bonded to the die and have no internal function. Routing traces or placing vias on these pads may cause mechanical stress or solder wicking issues; best practice is to omit copper and mask coverage entirely.
CY7C1021BN-15VXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021BN-15VXET FAQ
1.How can I place an order for CY7C1021BN-15VXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021BN-15VXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021BN-15VXET reliable?
The price and inventory of CY7C1021BN-15VXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BN-15VXET is usually 5 days.
3.What payment methods are accepted for CY7C1021BN-15VXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021BN-15VXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021BN-15VXET?
CY7C1021BN-15VXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021BN-15VXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021BN-15VXET?
For technical support, including CY7C1021BN-15VXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021BN-15VXET requirements.
6.How does Aetrix verify that CY7C1021BN-15VXET is sourced from the original manufacturer or authorized distributors?
All CY7C1021BN-15VXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BN-15VXET meets industry standards.
7.What is the process for return or replacement of CY7C1021BN-15VXET?
All CY7C1021BN-15VXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BN-15VXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021BN-15VXET part is unused and in its original packaging.
Return procedure for CY7C1021BN-15VXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1021BN-15VXET Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
