My Inquiry
My Account
Infineon Technologies CY7C1021BN-15ZSXET
- Part No.:
- CY7C1021BN-15ZSXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021BN-15ZSXET.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,157
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1021BN-15ZSXET from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 15 ns access time, designed for low-latency data buffering and temporary storage in embedded controllers and industrial microprocessor systems. It features independent byte enable (BHE/BLE), automatic CE-controlled power-down (ISB2 ≤ 10 mA), and operates at 5 V ±10% across commercial and industrial temperature ranges.
For engineers reviewing the CY7C1021BN-15ZSXET datasheet, CY7C1021BN-15ZSXET pinout, CY7C1021BN-15ZSXET application, or CY7C1021BN-15ZSXET equivalent, key selection criteria include tAA = 15 ns read timing, dual-byte write control, 44-pin TSOP II package compatibility, and automotive-grade thermal performance up to 85 °C.
Technical Context
The CY7C1021BN-15ZSXET implements a synchronous, non-volatile-independent SRAM array organized as 65,536 × 16 bits, with fully decoded address logic supporting concurrent upper- and lower-byte writes via BHE and BLE. Its CMOS architecture enables fast random-access reads without refresh cycles.
It uses TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and supports three distinct operating modes: active read (CE/OE LOW, WE HIGH), active write (CE/WE LOW, BHE or BLE LOW), and automatic standby (CE HIGH, ISB2 = 10 mA max). Output drive strength meets IOL = 8.0 mA / IOH = –4.0 mA specifications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 15 ns maximum - defines worst-case latency from valid address to stable data output during read operations. |
| ICC (max) | 130 mA - peak active supply current at fMAX = 1/tRC, critical for power budgeting in 5 V systems. |
| ISB2 | 10 mA max (Commercial/Industrial) - standby current when CE HIGH and inputs at valid logic levels, enabling low-power idle states. |
| VCC | 5 V ±10% - strict single-supply requirement; no internal regulation or wide-VCC tolerance. |
| Operating Temp | –40 °C to +85 °C - qualified for industrial environments; not rated for automotive-E (125 °C) per this variant. |
| Capacitance | CIN/COUT = 8 pF - limits trace length and fanout in high-speed bus designs; matches standard AC test load (30 pF). |
| Package | 44-pin TSOP II (0.400″ width) - surface-mount footprint compatible with JEDEC MO-141BA, reflow-solderable. |
Pinout & Package
44-pin Thin Small Outline Package (TSOP II), 0.400″ body width, lead pitch 0.8 mm, compliant with JEDEC MO-141BA. Pin 1 marked by notch or dot; top view shown in datasheet Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Input | 16-bit parallel address bus; selects one of 65,536 memory locations; no internal latching. |
| I/O1–I/O8 | Data I/O (Lower Byte) | Bidirectional 8-bit data path enabled only when BLE = LOW; tristated otherwise. |
| I/O9–I/O16 | Data I/O (Upper Byte) | Bidirectional 8-bit data path enabled only when BHE = LOW; independent of BLE state. |
| CE | Chip Enable | Active-LOW global select; forces device into standby (ISB2) when HIGH; required LOW for all operations. |
| WE | Write Enable | Active-LOW write strobe; must be LOW with CE LOW and BHE/BLE LOW to initiate write cycle. |
| OE | Output Enable | Active-LOW output gate; controls I/O direction; HIGH forces tristate regardless of CE/WE state. |
| BHE / BLE | Byte Enable | Independent active-LOW controls for upper/lower data bytes; enables partial-word writes without masking. |
| VCC (Pins 11, 33) | Power Supply | Primary 5 V supply; two pins reduce IR drop and improve noise immunity on dense PCBs. |
| VSS (Pins 12, 34) | Ground | Dual ground connections minimize ground bounce during simultaneous byte writes. |
Key Features
| Feature | Design Value |
|---|---|
| Independent byte write control | Enables 8-bit sub-word writes to either upper or lower byte without disturbing adjacent data. |
| Automatic CE power-down | Reduces ICC to ≤10 mA when CE is deasserted, eliminating need for external sleep control logic. |
| High-speed 15 ns access | Supports 66 MHz CPU bus interfaces without wait states in 5 V systems. |
| Low-Z / high-Z output control | tLZOE = 0 ns and tHZOE = 7 ns ensure clean bus release and prevent contention during multi-device sharing. |
| Industrial temperature range | Validated operation from –40 °C to +85 °C ensures reliability in factory automation and outdoor equipment. |
Applications
| Industrial PLC Data Buffering | Medical Imaging Frame Memory |
|---|---|
Use Scenario: Storing real-time sensor acquisition buffers in programmable logic controller backplanes with deterministic 15 ns read latency. IC Role / Device Role / Timing Role: Non-refreshing, parallel-access SRAM serving as dual-port scratchpad between ARM Cortex-M7 core and FPGA-based I/O engine. Use Value: Eliminates DRAM refresh overhead and guarantees sub-20 ns data availability for motion-control loop closure. |
Use Scenario: Holding uncompressed grayscale pixel frames (1024 × 768 × 16-bit) during CT scanner image reconstruction pipeline bursts. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter frame buffer interfacing directly to ASIC pixel processors via 16-bit multiplexed bus. Use Value: Enables zero-wait-state pixel streaming at 50 MB/s sustained rate using tAA = 15 ns and tRC = 15 ns timing. |
| Avionics Display Controller Cache | Ruggedized Test Equipment FIFO |
Use Scenario: Caching GUI bitmap tiles and font glyphs in DO-254-compliant cockpit display units operating at –40 °C to +85 °C. IC Role / Device Role / Timing Role: Radiation-tolerant (per qualification) SRAM providing deterministic access to graphics overlay layers under RTOS scheduling. Use Value: Meets MIL-STD-883 Class B latch-up immunity (>200 mA) and maintains tAA stability across full temperature range. |
Use Scenario: Implementing deep sample capture FIFOs in portable oscilloscopes requiring burst-mode acquisition at 100 MS/s. IC Role / Device Role / Timing Role: Dual-byte write-capable SRAM accepting interleaved ADC samples via BHE/BLE handshaking with FPGA sequencer. Use Value: Supports 16-bit parallel sampling without glue logic; tSD = 8 ns and tBW = 9 ns ensure reliable setup/hold margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-15TIN | 1-Mbit (128K × 8), 15 ns, 3.3 V only, single-byte interface | Lacks BHE/BLE; requires external byte mux for 16-bit systems; incompatible voltage domain | Select only if migrating to 3.3 V architecture and redesigning bus interface logic. |
| IS61LV102416-15TQLI | 1-Mbit (64K × 16), 15 ns, 3.3 V, industrial temp, no BHE/BLE | Single OE control; no independent byte write; higher ISB2 (25 µA vs 10 mA) | Prefer for new 3.3 V designs where byte granularity is unnecessary and ultra-low standby matters. |
Compared with AS6C1008-15TIN and IS61LV102416-15TQLI, CY7C1021BN-15ZSXET uniquely delivers 5 V compatibility, true dual-byte write capability, and industrial-grade thermal margin - making it irreplaceable in legacy 5 V microprocessor buses requiring partial-word updates.
Availability
CY7C1021BN-15ZSXET is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame memory, avionics display controller cache, and ruggedized test equipment FIFO applications requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1021BN-15ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions, with design centers in San Jose, CA and global manufacturing partnerships.
CY7C1021BN belongs to Cypress's legacy high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency data storage in 5 V microprocessor and DSP subsystems before widespread DDR adoption.
FAQ
Is CY7C1021BN-15ZSXET RoHS-compliant and lead-free?
Yes. The "Z" suffix in CY7C1021BN-15ZSXET indicates Pb-free construction per JEDEC J-STD-609, with matte tin lead finish and halogen-free molding compound. Full compliance documentation is available under Infineon's part number 001-06494 Rev. *J.
Can CY7C1021BN-15ZSXET operate at 3.3 V?
No. This device is specified only for 5 V ±10% operation (4.5 V to 5.5 V). Attempting 3.3 V operation results in undefined timing, increased tAA, and potential data corruption due to insufficient noise margin on TTL-compatible inputs.
What is the meaning of "SXET" in the full part number?
"SXET" denotes the packaging and marking variant: S = 44-pin TSOP II, X = tape-and-reel packaging, E = industrial temperature grade (–40 °C to +85 °C), T = lead-free. It does not indicate speed grade - that is defined by "-15" (15 ns).
Does CY7C1021BN-15ZSXET support asynchronous burst reads?
No. It is a classic asynchronous SRAM with no internal burst counter or sequential addressing logic. Each read requires full address setup (tAA = 15 ns); burst transfers must be managed externally by the memory controller or FPGA.
CY7C1021BN-15ZSXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1021BN-15ZSXET FAQ
1.How can I place an order for CY7C1021BN-15ZSXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021BN-15ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021BN-15ZSXET reliable?
The price and inventory of CY7C1021BN-15ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BN-15ZSXET is usually 5 days.
3.What payment methods are accepted for CY7C1021BN-15ZSXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021BN-15ZSXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021BN-15ZSXET?
CY7C1021BN-15ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021BN-15ZSXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021BN-15ZSXET?
For technical support, including CY7C1021BN-15ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021BN-15ZSXET requirements.
6.How does Aetrix verify that CY7C1021BN-15ZSXET is sourced from the original manufacturer or authorized distributors?
All CY7C1021BN-15ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BN-15ZSXET meets industry standards.
7.What is the process for return or replacement of CY7C1021BN-15ZSXET?
All CY7C1021BN-15ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BN-15ZSXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021BN-15ZSXET part is unused and in its original packaging.
Return procedure for CY7C1021BN-15ZSXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1021BN-15ZSXET Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
