Infineon Technologies CY7C1021BNV33L-10VXC
- Part No.:
- CY7C1021BNV33L-10VXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021BNV33L-10VXC.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:3,249
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Product details
Overview
CY7C1021BNV33L-10VXC from Cypress Semiconductor is a 64K × 16-bit (1,048,576-bit) asynchronous CMOS static RAM with 3.3V operation (3.0–3.6V), 10 ns access time, automatic CE-controlled power-down, and independent byte-wide write enable (BHE/ BLE). It operates in commercial temperature range (0°C to +70°C) and is packaged in a 44-pin 400-mil SOJ. Used for high-speed data buffering in embedded controllers and FPGA co-processor memory subsystems.
For engineers reviewing the CY7C1021BNV33L-10VXC datasheet, CY7C1021BNV33L-10VXC pinout, CY7C1021BNV33L-10VXC application, or CY7C1021BNV33L-10VXC equivalent, key selection criteria include tAA = 10 ns read timing, ISB1 ≤ 40 mA standby current, dual-byte write control, VCC = 3.3V ±10%, and SOJ package compatibility with legacy PCB footprints.
Technical Context
This SRAM implements a fully asynchronous interface with separate chip enable (CE), output enable (OE), and write enable (WE) controls, supporting both CE- and OE-gated read cycles. Its architecture includes independent byte-high (BHE) and byte-low (BLE) enables that allow selective 8-bit writes without affecting adjacent bytes.
The device uses CMOS circuitry to achieve low active power (576 mW max) and ultra-low CMOS standby power (1.80 mW max), enabled by automatic power-down when CE is deasserted. Data retention is guaranteed at VCC ≥ 2.0V with ICCDR ≤ 100 µA, supporting battery-backed hold modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1 Mbit total); supports 16-bit parallel data bus interfacing |
| Access Time (tAA) | 10 ns max; determines minimum read cycle interval in high-speed microcontroller or DSP memory interfaces |
| VCC Supply Range | 3.0 V to 3.6 V; compatible with 3.3V logic families and LDO-regulated systems |
| Standby Current (ISB2) | 5 mA max (CMOS inputs); enables low-power sleep states in portable instrumentation |
| Active Current (ICC) | 160 mA max (commercial, f = 1/tRC); defines thermal and decoupling requirements |
| Data Retention Voltage | VCC ≥ 2.0 V; allows operation from backup coin cell during main power loss |
| Operating Temperature | 0°C to +70°C; validated for industrial control panels and telecom line cards |
Pinout & Package
Package: 44-pin, 400-mil wide molded SOJ (Surface Mount Outline J-Lead), Pb-free, JEDEC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 65,536 memory locations |
| I/O1–I/O8 | Data I/O (Lower Byte) | Bi-directional 8-bit data path controlled by BLE; isolated during upper-byte operations |
| I/O9–I/O16 | Data I/O (Upper Byte) | Bi-directional 8-bit data path controlled by BHE; electrically independent of lower byte |
| CE | Chip Enable | Active-low global select; triggers automatic power-down when HIGH |
| OE | Output Enable | Active-low read gate; places I/O pins in high-Z when HIGH during reads |
| WE | Write Enable | Active-low write strobe; initiates write when CE and WE both LOW |
| BLE | Byte Low Enable | Active-low control for I/O1–I/O8; enables partial-byte writes |
| BHE | Byte High Enable | Active-low control for I/O9–I/O16; enables partial-byte writes |
| VCC | Power Supply | 3.3V core supply; two dedicated pins (pins 12 & 37) reduce IR drop |
| VSS | Ground | Signal ground reference; two dedicated pins (pins 13 & 27) improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Dual-byte write control | Independent BHE/BLE pins enable 8-bit sub-word writes without read-modify-write overhead |
| Automatic CE power-down | Reduces ICC to ≤40 mA (ISB1) or ≤5 mA (ISB2) when CE is HIGH-no external logic required |
| Low active power | 576 mW max at 10 ns speed enables use in thermally constrained FPGA carrier boards |
| High noise immunity | VIH = 2.2 V min and VIL = 0.8 V max ensure robust TTL/CMOS level compatibility |
| Data retention mode | Operates down to VCC = 2.0 V with ICCDR ≤ 100 µA-supports non-volatile hold via backup supply |
Applications
| Industrial PLC Data Buffer | FPGA Configuration Memory |
|---|---|
Use Scenario: Real-time I/O scan buffers in programmable logic controllers require fast, deterministic access to transient sensor and actuator data. IC Role / Device Role / Timing Role: Asynchronous SRAM provides zero-wait-state 16-bit data storage with 10 ns tAA, synchronized to PLC scan clock edges. Use Value: Dual-byte write enables atomic updates of status registers without corrupting adjacent control bits during concurrent read/write cycles. | Use Scenario: Storing configuration bitstreams for Xilinx Spartan or Intel Cyclone FPGAs during cold boot or dynamic reconfiguration. IC Role / Device Role / Timing Role: Non-volatile configuration memory interface; accessed via parallel bus under FPGA's INIT_DONE handshake. Use Value: 3.3V compatibility and SOJ footprint match legacy FPGA reference designs; tRC = 10 ns ensures bitstream load within FPGA startup timing budget. |
| Medical Imaging Frame Buffer | Automotive ADAS Pre-Processing Cache |
Use Scenario: Temporary storage of digitized ultrasound or endoscope frames before compression or display rendering. IC Role / Device Role / Timing Role: High-bandwidth frame buffer between ADC interface and image processor; operates in burst read mode. Use Value: 16-bit bus width matches common 12–14-bit medical ADC outputs; low tHZOE (5 ns) minimizes dead time between pixel transfers. | Use Scenario: Caching radar point cloud metadata in automotive forward collision warning modules prior to CAN FD transmission. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for real-time object tracking algorithms running on ARM Cortex-R5 cores. Use Value: Automatic CE power-down reduces system quiescent current during vehicle sleep mode while preserving critical fault logs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | Same 256K × 16 organization but 10 ns access; higher density; 3.3V only; TQFP-48 package | Requires PCB redesign due to different footprint and pinout; no BHE/ BLE support | Select if board space permits larger package and higher capacity is needed for future firmware expansion |
| AS6C4008-10PCN | 512K × 8 organization; 10 ns access; 3.3V; SOJ-32 package; no byte-enable control | 8-bit bus width limits throughput; lacks independent byte write capability | Choose only for cost-sensitive 8-bit MCU systems where dual-byte write is unnecessary |
Compared with IS61LV25616AL-10TLI and AS6C4008-10PCN, the CY7C1021BNV33L-10VXC uniquely delivers 64K × 16 density in SOJ-44 with hardware-supported byte masking-enabling precise memory updates without software overhead in resource-constrained embedded systems.
Availability
CY7C1021BNV33L-10VXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration memory, medical imaging frame buffering, and automotive ADAS pre-processing cache requiring stable component supply across multi-year production cycles.
Supply support for CY7C1021BNV33L-10VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.
The CY7C1021BNV series was designed specifically for high-reliability, low-power asynchronous SRAM applications in embedded systems where predictable timing, byte-selective writes, and long-term supply stability are critical.
FAQ
What is the maximum operating frequency supported by CY7C1021BNV33L-10VXC?
The device does not operate on a clock signal-it is an asynchronous SRAM. Its maximum effective throughput is determined by tRC = 10 ns, enabling up to 100 million read/write cycles per second in ideal conditions. System-level bandwidth depends on bus arbitration, controller latency, and external loading, not internal clocking.
Can CY7C1021BNV33L-10VXC be used with 5V-tolerant microcontrollers?
No. All inputs (A0–A15, CE, OE, WE, BHE, BLE) have absolute maximum voltage ratings of VCC + 0.5 V. With VCC = 3.3 V, input voltage must stay below 3.8 V. Direct connection to 5V logic requires level-shifting circuitry to avoid damage or undefined behavior.
Does this SRAM retain data when VCC drops below 3.0V?
Yes-data retention is guaranteed down to VCC = 2.0 V, provided CE remains HIGH and input voltages stay within VCC ±0.3 V. At 2.0 V, ICCDR is ≤100 µA, allowing extended hold time using a small backup capacitor or coin cell.
Is the 44-pin SOJ package RoHS-compliant?
Yes. The "VXC" suffix in CY7C1021BNV33L-10VXC explicitly denotes Pb-free (RoHS-compliant) construction per Cypress ordering nomenclature. Package diagram 51-85082 confirms compliance with JEDEC standards for lead-free SOJ packaging.
CY7C1021BNV33L-10VXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021BNV33L-10VXC FAQ
1.How can I place an order for CY7C1021BNV33L-10VXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021BNV33L-10VXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021BNV33L-10VXC reliable?
The price and inventory of CY7C1021BNV33L-10VXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BNV33L-10VXC is usually 5 days.
3.What payment methods are accepted for CY7C1021BNV33L-10VXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021BNV33L-10VXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021BNV33L-10VXC?
CY7C1021BNV33L-10VXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021BNV33L-10VXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021BNV33L-10VXC?
For technical support, including CY7C1021BNV33L-10VXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021BNV33L-10VXC requirements.
6.How does Aetrix verify that CY7C1021BNV33L-10VXC is sourced from the original manufacturer or authorized distributors?
All CY7C1021BNV33L-10VXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BNV33L-10VXC meets industry standards.
7.What is the process for return or replacement of CY7C1021BNV33L-10VXC?
All CY7C1021BNV33L-10VXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BNV33L-10VXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021BNV33L-10VXC part is unused and in its original packaging.
Return procedure for CY7C1021BNV33L-10VXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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