Infineon Technologies CY7C1021BNV33L-10VXCT

Overview

CY7C1021BNV33L-10VXCT from Cypress Semiconductor is a 64K × 16-bit (1,048,576-bit) asynchronous CMOS static RAM operating at 3.3 V with 10 ns access time, low active power (576 mW max), and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/ BLE and is packaged in a Pb-free 44-pin SOJ for industrial temperature range (–40°C to +85°C) applications including embedded controller data buffers.

For engineers reviewing the CY7C1021BNV33L-10VXCT datasheet, CY7C1021BNV33L-10VXCT pinout, CY7C1021BNV33L-10VXCT application, or CY7C1021BNV33L-10VXCT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 0.5 mA CMOS standby current, byte-select capability, and SOJ package compatibility with legacy SRAM socket designs.

Technical Context

This SRAM implements a full asynchronous interface with separate Byte High Enable (BHE) and Byte Low Enable (BLE) inputs, enabling true 8-bit sub-word writes without external logic. Its dual-byte architecture allows concurrent access to upper and lower data bytes under independent control of BHE and BLE, while CE-driven automatic power-down reduces ICC to 500 µA when deselected.

The device uses standard TTL-compatible input thresholds (VIH = 2.2 V, VIL = 0.8 V) and delivers CMOS-level outputs (VOH ≥ 2.4 V, VOL ≤ 0.4 V) under 3.3 V ±10% supply. All timing parameters-including tDOE = 4 ns, tHZOE = 5 ns, and tPD = 12 ns-are specified over –40°C to +85°C with 30-pF load and 3 ns signal rise/fall times.

Key Specifications

Pinout & Package

Package: 44-pin SOJ (400-mil width), Pb-free, JEDEC MS-024AC compliant. Body dimensions: 44.45 mm × 10.16 mm × 3.30 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with IS61LV102416AL-10TLI and AS6C1008-10PCN, CY7C1021BNV33L-10VXCT uniquely combines SOJ package compatibility, true dual-byte write control, and lowest industrial-grade standby current (0.5 µA), making it optimal for retrofitting legacy industrial controllers.

Availability

CY7C1021BNV33L-10VXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive body control modules, medical infusion pump controllers, and avionics display interface buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1021BNV33L-10VXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

This device belongs to Cypress's legacy high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency data buffering in resource-constrained embedded systems where DRAM complexity or flash write latency is unacceptable.

FAQ

What is the maximum clock frequency this SRAM can support in a synchronous interface?

This is an asynchronous SRAM with no internal clock; it operates on edge-triggered control signals (CE, OE, WE). Its 10 ns access time supports effective data transfer rates up to 100 MHz in systems where address and control setup/hold times are met-no clock signal is required or used.

Does CY7C1021BNV33L-10VXCT support battery backup operation below 3.3 V?

Yes-it guarantees data retention down to VDR = 2.0 V with ICCDR ≤ 100 µA. When VCC drops to 2.0 V and CE is held HIGH, the device enters data retention mode and maintains stored contents without external refresh.

Can BLE and BHE be asserted simultaneously for full 16-bit writes?

Yes-asserting both BLE = LOW and BHE = LOW enables simultaneous write to all 16 I/O pins (I/O1–I/O16). The truth table confirms "Write - All bits" mode occurs when CE = LOW, WE = LOW, and both BLE and BHE are LOW.

Is the 44-pin SOJ package compatible with standard 44-pin SOJ sockets used for older 5 V SRAMs?

Physically yes-the 400-mil SOJ footprint matches JEDEC MO-024AC. However, electrical compatibility requires confirming socket wiring supports 3.3 V I/O levels and that adjacent 5 V devices do not inject noise onto shared VCC/GND planes due to mixed-voltage operation.