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Infineon Technologies CY7C1021BNV33L-10ZXC

Part No.:
CY7C1021BNV33L-10ZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1021BNV33L-10ZXC.pdf
Description:
IC SRAM 1MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,923

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Product details

Overview

CY7C1021BNV33L-10ZXC from Cypress Semiconductor is a 64K × 16-bit (1,048,576-bit) asynchronous CMOS static RAM with 3.3 V ±10% supply, 10 ns access time, and TSOP II-44 package. It supports independent byte-wide write control via BHE/ BLE, automatic CE-driven power-down (1.80 mW max standby), and operates across commercial temperature range (0°C to +70°C). Used in legacy industrial controllers for real-time data buffering where deterministic latency and low-power deselected state are critical.

For engineers reviewing the CY7C1021BNV33L-10ZXC datasheet, CY7C1021BNV33L-10ZXC pinout, CY7C1021BNV33L-10ZXC application, or CY7C1021BNV33L-10ZXC equivalent, this page delivers verified timing parameters, validated byte-enable behavior, package-specific thermal and routing constraints, and direct alternatives with documented access time and standby current trade-offs.

Technical Context

This SRAM implements a full asynchronous interface with separate Byte High Enable (BHE) and Byte Low Enable (BLE) inputs enabling true 8-bit sub-word writes without read-modify-write cycles. Its dual-byte architecture allows concurrent access to upper and lower data bytes under independent enable control while sharing address and chip-select logic.

The device uses standard TTL-compatible input thresholds (VIH = 2.2 V, VIL = 0.8 V) and drives outputs to VOH ≥ 2.4 V / VOL ≤ 0.4 V under specified loads. Power management relies on CE-driven automatic power-down, reducing ICC to 500 µA (L version) when CE is deasserted - a feature confirmed in both SOJ and TSOP II variants per datasheet Rev. **.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization64K × 16-bit (1 Mbit total); enables 16-bit data bus interfacing without external multiplexing
Access Time (tAA)10 ns max; guarantees deterministic read latency for cycle-accurate timing in microcontroller co-processor interfaces
Supply Voltage3.0 V–3.6 V; compatible with 3.3 V system rails and tolerant of ±10% regulation variation
Active Current (ICC)160 mA max (commercial); defines peak power delivery requirement for PCB decoupling design
Standby Current (ISB2)500 µA max (L version); enables ultra-low-power hold mode during processor sleep states
Data Retention Voltage2.0 V min; supports battery-backed retention down to 2 V without data loss
Operating Temperature0°C to +70°C; validated for use in commercial-grade embedded instrumentation and telecom line cards

Pinout & Package

Package: 44-pin TSOP Type II (10.16 mm × 20.95 mm, 0.8 mm pitch), Pb-free, JEDEC MO-143AC compliant. Pin 1 marked by beveled corner; body thickness 1.0 mm max.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus; selects one of 65,536 memory locations; no internal latching
I/O1–I/O8Lower Data I/OBi-directional 8-bit data path enabled only when BLE = LOW during read/write
I/O9–I/O16Upper Data I/OBi-directional 8-bit data path enabled only when BHE = LOW during read/write
CEChip EnableActive-LOW global select; initiates automatic power-down when HIGH (ISB2 = 500 µA)
OEOutput EnableActive-LOW output gate; places I/O pins in high-Z when HIGH, independent of CE state
WEWrite EnableActive-LOW write strobe; controls direction of I/O pins and initiates write cycle with CE and BHE/ BLE
BLEByte Low EnableActive-LOW control for I/O1–I/O8; enables partial writes without disturbing upper byte
BHEByte High EnableActive-LOW control for I/O9–I/O16; enables partial writes without disturbing lower byte

Key Features

FeatureDesign Value
Independent byte write controlEliminates need for external byte masking logic; reduces PCB area and signal count in 16-bit bus systems
Automatic CE power-downReduces standby power to 500 µA without external control logic or sequencing delays
10 ns access time at 3.3 VSupports direct interface with 80 MHz bus clocks without wait states in legacy x86 and 68K-based designs
TSOP II-44 Pb-free packageEnables RoHS-compliant reflow assembly; 0.8 mm pitch supports standard SMT placement accuracy
Data retention at 2.0 VPermits use with single-cell Li-ion or coin-cell backup without voltage translation circuitry

Applications

Industrial PLC Data BufferLegacy Telecom Line Card Cache

Use Scenario: Storing real-time I/O scan data between CPU polling intervals in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Asynchronous data buffer providing zero-wait-state access for cyclic 16-bit register reads/writes.

Use Value: 10 ns tAA ensures deterministic response within 125 µs scan cycles; low ISB2 extends uptime during brownout conditions.

Use Scenario: Caching configuration registers and status flags in E1/T1 framing IC interfaces on telecom shelf backplanes.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding channelized DS0 mapping tables during hot-swap events.

Use Value: Independent BHE/ BLE enables atomic updates to individual octets without corrupting adjacent fields.

Medical Imaging Frame StoreAvionics Display Controller Buffer

Use Scenario: Temporary storage of digitized X-ray sensor lines prior to FPGA-based compression in portable radiography units.

IC Role / Device Role / Timing Role: Burst-mode write buffer accepting parallel 16-bit pixel streams from ADC interfaces.

Use Value: 160 mA ICC supports sustained 100 MB/s burst writes; TSOP II footprint simplifies thermal pad layout near analog front-end.

Use Scenario: Holding graphics tile descriptors and palette entries for monochrome LCD drivers in flight deck display modules.

IC Role / Device Role / Timing Role: Static frame buffer accessed by dedicated display controller with fixed 16-bit address incrementing.

Use Value: Data retention at 2.0 V allows seamless transition to backup power during main supply interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV25616AL-10TLI10 ns access, 256K × 16 organization, 3.3 V, TQFP-44; higher density but larger die size and 200 µA ISBRequires board redesign for pinout and footprint; suitable for capacity upgrades where space permitsSelect when >1 Mbit memory is needed and TQFP thermal profile is acceptable
AS6C4008-10TIN10 ns access, 256K × 16, 3.3 V, TSOP II-44; 300 µA ISB, no BHE/ BLE supportLacks byte-enable functionality; requires external gating for partial writesSelect when byte-level write control is unnecessary and lowest standby current is prioritized

Compared with IS61LV25616AL-10TLI and AS6C4008-10TIN, the CY7C1021BNV33L-10ZXC offers unique byte-select capability in a drop-in TSOP II-44 footprint with proven 500 µA standby - critical for retrofitting legacy 64K×16 designs without altering control logic or layout.

Availability

CY7C1021BNV33L-10ZXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy telecom line card caching, and medical imaging frame storage requiring stable component supply across extended product lifecycles.

Supply support for CY7C1021BNV33L-10ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure.

The CY7C1021BNV series targets cost-sensitive, timing-critical embedded systems requiring deterministic asynchronous SRAM performance with minimal external logic - especially in legacy 16-bit bus architectures.

FAQ

What is the maximum clock frequency supported by CY7C1021BNV33L-10ZXC?

This is an asynchronous SRAM and does not use a clock signal. Its operation is controlled solely by CE, OE, WE, BHE, and BLE timing. The 10 ns access time corresponds to a maximum effective bus cycle rate of 100 MHz when interfaced with controllers that meet setup/hold requirements - confirmed by tRC = 10 ns in the datasheet's switching characteristics table.

Does CY7C1021BNV33L-10ZXC support battery backup for data retention?

Yes. The L-version supports data retention at VCC = 2.0 V minimum with ICCDR ≤ 100 µA, enabling direct connection to lithium coin cells or supercapacitors without regulators. This behavior is explicitly characterized in the "Data Retention Characteristics" section (Page 5) and validated across the commercial temperature range.

Can CY7C1021BNV33L-10ZXC be used with 5 V logic interfaces?

No. All inputs require VIH ≥ 2.2 V and VIL ≤ 0.8 V referenced to VCC = 3.3 V, and absolute maximum ratings prohibit applying 5 V signals. Interfacing with 5 V systems requires level-shifting circuitry - confirmed by the "DC Input Voltage" specification (−0.3 V to VCC+0.3 V) and "Maximum Ratings" table limiting input voltage to VCC+0.5 V.

Is the TSOP II-44 package of CY7C1021BNV33L-10ZXC RoHS compliant?

Yes. The "ZXC" suffix denotes Pb-free TSOP II packaging, as stated in the Ordering Information table (Page 8) and confirmed by package diagram 51-85087. Cypress qualified this variant to JEDEC J-STD-020 moisture sensitivity level 3 and RoHS Directive 2011/65/EU prior to discontinuation.

CY7C1021BNV33L-10ZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1021BNV33L-10ZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1021BNV33L-10ZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1021BNV33L-10ZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BNV33L-10ZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1021BNV33L-10ZXC?

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6.How does Aetrix verify that CY7C1021BNV33L-10ZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1021BNV33L-10ZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BNV33L-10ZXC meets industry standards.

7.What is the process for return or replacement of CY7C1021BNV33L-10ZXC?

All CY7C1021BNV33L-10ZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BNV33L-10ZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1021BNV33L-10ZXC part is unused and in its original packaging.

Return procedure for CY7C1021BNV33L-10ZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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