Infineon Technologies CY7C1021BNV33L-10ZXCT

Overview

CY7C1021BNV33L-10ZXCT from Cypress Semiconductor is a 64K × 16-bit (1,048,576-bit) asynchronous CMOS static RAM operating at 3.3 V with 10 ns access time, low active power (576 mW max), and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/ BLE and is packaged in a Pb-free 44-pin TSOP II for embedded memory buffering in industrial controllers.

For engineers reviewing the CY7C1021BNV33L-10ZXCT datasheet, CY7C1021BNV33L-10ZXCT pinout, CY7C1021BNV33L-10ZXCT application, or CY7C1021BNV33L-10ZXCT equivalent, key selection criteria include tAA ≤ 10 ns, ISB1 ≤ 40 mA (CMOS standby), VCC = 3.3 V ±10%, byte-select capability, and industrial temperature support (–40°C to +85°C).

Technical Context

This SRAM implements a full asynchronous interface with separate Byte High Enable (BHE) and Byte Low Enable (BLE) inputs enabling independent 8-bit write operations to upper or lower data bytes. Address decoding covers A0–A15 for 65,536 word locations, with all I/O pins (I/O1–I/O16) placed in high-impedance state during deselection (CE HIGH), output disable (OE HIGH), or write cycles (WE LOW).

Power management relies on dual standby modes: ISB1 (TTL-compatible CE threshold) draws ≤40 mA, while ISB2 (CMOS-compatible CE threshold) draws ≤5 mA - the L-version further reduces ISB2 to 500 µA. Data retention voltage is specified at VDR ≥ 2.0 V with ICCDR ≤ 100 µA.

Key Specifications

Pinout & Package

Package: 44-pin TSOP Type II (Pb-free), 400-mil width, 0.8 mm pitch, JEDEC MO-141AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Compared with IS61LV102416AL-10TLI and AS6C1008-10PCN, CY7C1021BNV33L-10ZXCT uniquely delivers true independent byte write capability, dual-mode standby current, and guaranteed 10 ns performance in a single 44-pin TSOP - making it optimal for space-constrained industrial systems requiring deterministic partial-word updates.

Availability

CY7C1021BNV33L-10ZXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, avionics sensor fusion caching, and ATE pattern memory applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1021BNV33L-10ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, with emphasis on reliability and low-power innovation.

The CY7C1021BNV series targets cost-sensitive, high-speed embedded systems needing deterministic SRAM timing, byte-select flexibility, and robust industrial temperature operation - particularly where legacy parallel bus interfaces remain in use.

FAQ

What is the maximum clock frequency supported by CY7C1021BNV33L-10ZXCT?

This is an asynchronous SRAM with no internal clock; its speed is defined by access time (tAA ≤ 10 ns) and cycle time (tRC ≤ 10 ns). It interfaces directly with microcontrollers or FPGAs using simple address/data/control strobes - no clock signal required. Maximum effective throughput depends on bus protocol overhead, not a clock domain.

Does CY7C1021BNV33L-10ZXCT support battery backup operation?

Yes - the L-version supports data retention at VCC ≥ 2.0 V with ICCDR ≤ 100 µA. When VCC drops below normal operating range but remains ≥2.0 V and CE is held HIGH, stored data persists indefinitely. This enables seamless integration with coin-cell or supercapacitor backup circuits in industrial logging applications.

Can CY7C1021BNV33L-10ZXCT be used with 5 V logic interfaces?

No - it is strictly a 3.3 V device with absolute maximum input voltage of VCC + 0.5 V (i.e., ≤3.85 V). Direct connection to 5 V logic will exceed VIH/VIL thresholds and risk damage. Level translation (e.g., TXB0108 or discrete MOSFET buffers) is mandatory for mixed-voltage systems.

Is the 44-pin TSOP II package of CY7C1021BNV33L-10ZXCT RoHS-compliant?

Yes - the "ZXC" suffix denotes Pb-free construction per JEDEC J-STD-609A Category 1. The package uses matte tin (Sn) lead finish, passes SIR testing per IPC-J-STD-002C, and complies with EU RoHS Directive 2011/65/EU and China RoHS II. Full material declarations are available upon request.