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Infineon Technologies CY7C1021BNV33L-15VXC
- Part No.:
- CY7C1021BNV33L-15VXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021BNV33L-15VXC.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,415
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Product details
Overview
CY7C1021BNV33L-15VXC from Cypress Semiconductor is a 64K × 16-bit (1,048,576-bit) asynchronous CMOS static RAM with 3.3V operation (3.0–3.6V), 15 ns maximum access time (tAA), automatic CE-controlled power-down, and independent byte-wide write enable (BLE/BHE). It supports high-speed data buffering in industrial control modules where deterministic timing and low standby power are required.
For engineers reviewing the CY7C1021BNV33L-15VXC datasheet, CY7C1021BNV33L-15VXC pinout, CY7C1021BNV33L-15VXC application, or CY7C1021BNV33L-15VXC equivalent, this page delivers verified electrical specs, SOJ-44 package mapping, byte-select functionality, retention current at 2.0V, and real-world use cases in legacy embedded systems requiring non-volatile-compatible SRAM behavior.
Technical Context
This SRAM implements a full asynchronous interface with separate chip enable (CE), output enable (OE), write enable (WE), and dual byte enables (BLE/BHE) to support 8-bit sub-word writes without bus contention. Its internal 512 × 2048 memory array uses CMOS sense amplifiers and drivers optimized for 3.3V logic levels and TTL/CMOS-compatible input thresholds (VIH = 2.2V min, VIL = 0.8V max).
Power management is handled via two standby modes: ISB1 (TTL-input CE power-down, 40 mA max) and ISB2 (CMOS-input CE power-down, 5 mA max); the L-version further reduces ISB2 to 500 µA and enables data retention down to VCC = 2.0V with ICCDR ≤ 100 µA - critical for battery-backed applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1 Mbit total); enables 16-bit parallel data path without external multiplexing |
| Access Time (tAA) | 15 ns max; guarantees read data valid within 15 ns of address stabilization for 66 MHz system timing |
| VCC Operating Range | 3.0V to 3.6V; compatible with standard 3.3V LVTTL/LVCMOS I/O domains and noise margins |
| Active Current (ICC) | 140 mA max (commercial); defines peak supply draw during burst reads/writes at 66 MHz |
| Standby Current (ISB2-L) | 500 µA max; enables >100-hour battery backup in low-power hold mode at 2.0V VCC |
| Data Retention Voltage | 2.0V min; allows memory state preservation during brown-out or controlled power-gating sequences |
| Input Capacitance | 6 pF max; limits capacitive loading on address/control buses, supporting longer trace routing |
Pinout & Package
Package: 44-pin 400-mil molded SOJ (Pb-free), JEDEC MS-025AC compliant, 0.07" pitch, body width 0.400", lead count 44.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 65,536 memory locations for read/write access |
| I/O1–I/O8 | Lower Data Bus | Bi-directional 8-bit data path enabled only when BLE = LOW during read/write |
| I/O9–I/O16 | Upper Data Bus | Bi-directional 8-bit data path enabled only when BHE = LOW during read/write |
| CE | Chip Enable | Active-LOW global select; forces device into automatic power-down when HIGH |
| OE | Output Enable | Active-LOW read control; disables outputs (high-Z) when HIGH, regardless of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle only when CE and WE both LOW |
| BLE | Byte Low Enable | Active-LOW control for lower byte (I/O1–I/O8); enables partial-word writes |
| BHE | Byte High Enable | Active-LOW control for upper byte (I/O9–I/O16); enables partial-word writes |
| VCC | Supply Voltage | 3.3V core and I/O supply; two pins (pins 16 & 31) reduce IR drop and noise coupling |
| VSS | Ground | Signal ground reference; two pins (pins 12 & 29) improve return path integrity |
Key Features
| Feature | Design Value |
|---|---|
| Independent Byte Write Control | BLE and BHE allow simultaneous or selective 8-bit writes to upper/lower data lanes without masking logic |
| Low-Power Standby Mode (L-version) | 500 µA max ISB2 at 3.3V enables >1-year coin-cell backup in maintenance-free industrial loggers |
| Automatic CE Power-Down | Hardware-triggered transition to low-current state within 15 ns of CE HIGH, eliminating software overhead |
| High-Speed 15 ns Access | tAA = 15 ns meets timing closure for 66 MHz microcontroller buses without wait states |
| Robust Input/Output Thresholds | VIH = 2.2V min / VIL = 0.8V max ensures reliable interfacing with mixed 3.3V/5V legacy systems |
Applications
| Industrial PLC Data Buffer | Legacy Embedded Instrumentation |
|---|---|
Use Scenario: Real-time acquisition buffer in programmable logic controller I/O modules handling analog sensor streams at 10 kHz sampling rate. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state storage for pre-processed sensor frames before DMA transfer to ARM9 host. Use Value: 15 ns tAA and dual-byte write enable allow interleaved capture of 16-bit ADC results without bus arbitration delays. |
Use Scenario: Non-volatile configuration store in medical infusion pump controllers requiring guaranteed data retention during AC power loss. IC Role / Device Role / Timing Role: Battery-backed SRAM holding calibration tables and safety-critical runtime parameters with 2.0V data retention threshold. Use Value: 500 µA ISB2-L current at 2.0V extends CR2032 battery life to >3 years in hold mode. |
| Avionics Display Frame Buffer | Telecom Line Card Packet Buffer |
Use Scenario: Pixel buffer in DO-254-compliant cockpit display units rendering MIL-STD-1553B command responses. IC Role / Device Role / Timing Role: High-reliability SRAM storing 1024×768 monochrome frame data with deterministic read latency under EMI stress. Use Value: 6 pF input capacitance and 5 ns tHZOE minimize signal distortion on long PCB traces in shielded avionics enclosures. |
Use Scenario: Temporary packet staging in T1/E1 line interface cards performing HDLC framing and CRC insertion. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer between serial PHY and DSP engine with byte-select granularity. Use Value: Independent BLE/BHE control enables concurrent header (lower byte) and payload (upper byte) updates without full-word overwrite cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-15TI | Same 256K × 16 organization but 15 ns tAA; higher density, no data retention spec below 2.7V | Preferred for new designs needing larger buffer space; unsuitable for sub-2.7V brown-out retention | Select if memory expansion >1 Mbit is required and retention voltage margin is not critical |
| AS6C4008-15PCN | 4 Mbit (256K × 16) with 15 ns tAA; 3.3V-only, ISB = 1 µA (vs. 500 µA), no BLE/BHE separation | Lacks byte-enable flexibility; requires external gating for partial writes | Choose when ultra-low standby current dominates over byte-select capability |
Compared with IS61LV25616AL-15TI and AS6C4008-15PCN, the CY7C1021BNV33L-15VXC uniquely balances 1 Mbit capacity, true 2.0V data retention, and hardware byte masking - making it irreplaceable in cost-constrained, battery-backed industrial controllers where partial writes and brown-out resilience are mandatory.
Availability
CY7C1021BNV33L-15VXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, avionics display frame storage, and telecom line card packet staging requiring stable component supply across extended product lifecycles.
Supply support for CY7C1021BNV33L-15VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with emphasis on low-power, long-lifecycle components.
The CY7C1021BNV series targets legacy and upgrade paths in embedded systems requiring pin-compatible, drop-in replacements for aging SRAMs - prioritizing timing predictability, wide temperature operation, and robust power management over density scaling.
FAQ
Is CY7C1021BNV33L-15VXC compatible with 5V-tolerant microcontrollers?
No. This device operates strictly at 3.3V (3.0–3.6V) and has VIH = 2.2V minimum, VIL = 0.8V maximum. Direct connection to 5V logic requires level-shifting circuitry; its inputs are not 5V-tolerant, and exceeding VCC + 0.5V risks latch-up per Absolute Maximum Ratings.
What is the minimum VCC required to retain data after power removal?
Data retention is guaranteed down to VCC = 2.0V with CE held HIGH and inputs biased to valid logic levels (VIN > VCC – 0.3V or VIN < 0.3V). At this voltage, ICCDR remains ≤ 100 µA, enabling multi-day retention on small backup capacitors or coin cells.
Does the SOJ-44 package support reflow soldering?
Yes. The CY7C1021BNV33L-15VXC in Pb-free SOJ-44 (ordering code suffix -VXC) is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260°C and 60-second duration above 217°C, matching standard SnAgCu process profiles.
Can BLE and BHE be asserted simultaneously for full 16-bit writes?
Yes. When both BLE and BHE are LOW while CE and WE are LOW, all 16 I/O lines (I/O1–I/O16) participate in the write operation. The truth table explicitly defines this as "Write – All bits" mode, with no timing penalty versus single-byte writes.
CY7C1021BNV33L-15VXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021BNV33L-15VXC FAQ
1.How can I place an order for CY7C1021BNV33L-15VXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021BNV33L-15VXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021BNV33L-15VXC reliable?
The price and inventory of CY7C1021BNV33L-15VXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BNV33L-15VXC is usually 5 days.
3.What payment methods are accepted for CY7C1021BNV33L-15VXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021BNV33L-15VXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021BNV33L-15VXC?
CY7C1021BNV33L-15VXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021BNV33L-15VXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021BNV33L-15VXC?
For technical support, including CY7C1021BNV33L-15VXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021BNV33L-15VXC requirements.
6.How does Aetrix verify that CY7C1021BNV33L-15VXC is sourced from the original manufacturer or authorized distributors?
All CY7C1021BNV33L-15VXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BNV33L-15VXC meets industry standards.
7.What is the process for return or replacement of CY7C1021BNV33L-15VXC?
All CY7C1021BNV33L-15VXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BNV33L-15VXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021BNV33L-15VXC part is unused and in its original packaging.
Return procedure for CY7C1021BNV33L-15VXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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